EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions Abbreviated symbol : K1 zApplications Interfacing, switching (30V, 100mA) zPackaging specifications Package Type zEquivalent circuit (6) Taping Code T2R Basic ordering unit (pieces) 8000 (5) Gate Protection Diode ∗ (4) Tr1 EM6K1 Tr2 (1) Symbol Limits Unit Drain−source voltage VDSS 30 V Gate−source voltage VGSS ±20 V Continuous ID ±100 mA Pulsed IDP ∗1 ±400 mA ∗2 150 mW / TOTAL 120 mW / ELEMENT Drain current Total power dissipation PD (2) (3) (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter ∗ Gate Protection Diode Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Rev.C 1/3 EM6K1 Transistor zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Min. Typ. Max. Unit IGSS − − ±1 µA VGS=±20V, VDS=0V V(BR)DSS 30 − − V ID=10µA, VGS=0V Symbol Gate−source leakage Drain−source breakdown voltage Conditions IDSS − − 1.0 µA VDS=30V, VGS=0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA Static drain−source on−starte resistance RDS(on) − 5 8 Ω ID=10mA, VGS=4V RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V Forward transfer admittance Yfs 20 − − mS VDS=3V, ID=10mA Input capacitance Ciss − 13 − pF VDS=5V Output capacitance Coss − 9 − pF VGS=0V Reverse transfer capacitance Crss − 4 − pF f=1MHz Turn−on delay time td(on) − 15 − ns ID=10mA, VDD 5V tr − 35 − ns VGS=5V td(off) − 80 − ns RL=500Ω tf − 80 − ns RG=10Ω Zero gate voltage drain current Rise time Turn−off delay time Fall time zElectrical characteristic curves 0.15 DRAIN CURRENT : ID (A) 0.1 2.5V 0.05 2V 2 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m VGS=1.5V 1 50m 3 4 0.1m 0 5 1 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Output Characteristics 20 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 VDS=3V ID=0.1mA 1.5 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 20 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 25 50 75 100 125 150 Fig.3 Gate Threshold Voltage vs. Channel Temperature 15 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0 CHANNEL TEMPERATURE : Tch (°C) Fig.2 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) VDS=3V 100m Pulsed 3V 3.5V 0 0 GATE THRESHOLD VOLTAGE : VGS(th) (V) 200m 4V 0.5 DRAIN CURRENT : ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Rev.C 2/3 EM6K1 Transistor 0.5 VDS=3V Pulsed 0.2 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 50 20m 0V VGS=4V 5m 2m 1m 0.5m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.5 0 5 1.5 Crss 1 Ta=25°C VDD=5V VGS=5V RG=10Ω tf 500 Coss 2 1 Fig.9 Reverse Drain Current vs. Source-Drain Voltage (Ι) 1000 Ciss 10 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=25°C f=1MHZ VGS=0V Pulsed 20 50m CAPACITANCE : C (pF) REVERCE DRAIN CURRENT : IDR (A) 0.05 0.1 0.2 50m Fig.8 Forward Transfer Admittance vs. Drain Current Ta=25°C Pulsed 100m 0.005 0.01 0.02 VGS=0V Pulsed 100m DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 200m 0.0005 0.001 0.002 200m SWITHING TIME : t (ns) 7 10m REVERCE DRAIN CURRENT : IDR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : ⏐ Yfs ⏐(S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 td(off) 200 100 50 tr 20 td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 0.5 0.1 0.2 0.5 1 2 5 10 20 2 0.1 0.2 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.10 Reverse Drain Current vs. Source-Drain Voltage (ΙΙ) Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Switching Characteristics zSwitching characteristics measurement circuits Pulse Width 90% VGS VGS RG ID D.U.T. VDS 50% 10% 50% 10% VDS 10% RL VDD td(on) ton Fig.13 Switching Time Test Circuit 90% 90% tr td(off) tf toff Fig.14 Switching Time Waveforms Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1