AP9965GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
D
G
BVDSS
RDS(ON)
ID
40V
21mΩ
10A
S
D
Description
D
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 3 x 3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
D
S
S
S
G
PMPAK ® 3 x 3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
+16
V
3
10
A
3
8
A
Continuous Drain Current
Continuous Drain Current
1
40
A
3.57
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
TJ
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
35
℃/W
Data and specifications subject to change without notice
1
201112231
AP9965GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
40
-
-
V
VGS=10V, ID=9A
-
17
21
mΩ
VGS=4.5V, ID=5A
-
22
28
mΩ
0.8
1.4
2.5
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=9A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=9A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
19
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=15V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2.9A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec, 160oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9965GYT-HF
40
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
T A = 150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
20
10
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
20
10
0
0
0
1
2
3
4
5
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
2.4
I D =9A
V G =10V
ID=5A
T A =25 ℃
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
22
20
1.6
1.2
18
0.8
16
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
6
o
o
T j =150 C
4
T j =25 C
1.2
0.8
2
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9965GYT-HF
ID=9A
V DS =20V
800
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
10
6
C iss
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
ID (A)
10
100us
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=160 ℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
12
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
10
30
20
10
8
6
4
o
T j =150 C
o
T j =25 C
2
T j = -40 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4