SHINDENGEN Schottky Rectifiers (SBD) Dual OUTLINE DIMENSIONS DF30SC4M Case : STO-220 Unit : mm 40V 30A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=112℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ Repetitive Peak Surge Reverse Power P RRSM Pulse width 10μs, Rating of per diode, Tj= 25℃ Ratings -40〜150 150 40 45 30 360 1000 Unit ℃ ℃ V V A A W ●Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Junction Capacitance Cj Thermal Resistance θjc Ratings Max.0.55 Max.10 Typ.590 Max.1.6 Unit V mA pF ℃/W Tc=25℃) Conditions I F=15A, Pulse measurement, Rating of per diode V R=VRM, Pulse measurement, Rating of per diode f=1MHz, VR=10V, Rating of per diode junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Forward Current IF [A] DF30SC4M Forward Voltage 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0 0.2 0.4 0.6 Forward Voltage VF [V] 0.8 1 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 DF30SC4M f=1MHz Tc=25°C TYP per diode DF30SC4M Reverse Current 10000 1000 Reverse Current IR [mA] Tc=150°C [MAX] Tc=150°C [TYP] 100 Tc=125°C [TYP] Tc=100°C [TYP] 10 Tc=75°C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 DF30SC4M Reverse Power Dissipation Reverse Power Dissipation PR [W] 50 DC D=0.05 40 0.1 0.2 0.3 30 0.5 20 SIN 10 0 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DF30SC4M Forward Power Dissipation 30 Forward Power Dissipation PF [W] DC D=0.8 25 0.3 20 SIN 0.5 0.2 0.1 0.05 15 10 5 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DF30SC4M Derating Curve Average Rectified Forward Current IO [A] 60 50 DC D=0.8 40 0.5 SIN 30 0.3 0.2 20 0.1 0.05 10 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T DF30SC4M Peak Surge Forward Capability IFSM 500 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 400 300 200 100 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP