isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS133/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUS133 850 BUS133A 1000 BUS133 450 BUS133A 500 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS133/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified PARAMETER SYMBOL CONDITIONS VCEO(SUS) VCE(sat)-2 VBE(sat) MAX IC= 0.1A ; IB= 0; L= 10mH BUS133A VCE(sat)-1 TYP. UNIT 450 BUS133 Collector-Emitter Sustaining Voltage MIN V 500 BUS133 IC= 5A; IB= 0.7A 2.5 BUS133A IC= 5A; IB= 1A 1.0 BUS133 IC= 10A; IB= 1.3A 3.0 Collector-Emitter Saturation Voltage V Collector-Emitter Saturation Voltage V BUS133A IC= 10A; IB= 2A 1.5 BUS133 IC= 10A; IB= 1.3A 1.5 Base-Emitter Saturation Voltage V BUS133A IC= 10A; IB= 2A 1.5 0.25 1.5 mA 1 mA 400 pF ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 15A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 5 Switching Times , Resistive Load BUS133 ton 0.4 μs Turn-On Time BUS133A 0.45 IC= 10A ;IB1= 1.3A; IB2= -2.6A tstg tf Storage Time 1.3 μs Fall Time 0.15 μs isc website：www.iscsemi.cn 2