AON7700 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 40A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS=4.5V) < 8.6mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 100 16 IDSM TA=70°C ±12 28 IDM TA=25°C Units V 40 ID TC=100°C Maximum 30 A 12 Avalanche Current C IAS 17 A Avalanche energy L=0.1mH C TC=25°C EAS 14 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 3: May. 2012 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 26 PD TC=100°C Typ 30 60 4 °C Max 40 75 4.8 Units °C/W °C/W °C/W Page 1 of 7 AON7700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V TJ=125°C 100 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS，ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 nA 2.2 V 5.5 7.2 9 11 VGS=4.5V, ID=10A 6.6 8.6 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=12A 45 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 1.7 VGS=10V, ID=12A Output Capacitance Units V 0.5 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 0.7 V 30 A 1690 pF 175 pF 120 pF 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 31 44 nC Qg(4.5V) Total Gate Charge 14 20 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12A VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 0.7 4 nC 5 nC 6 ns 9 ns 27 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 7 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: May 2012 www.aosmd.com Page 2 of 7 AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V 60 VDS=5V 3.5V 60 4.5V ID(A) ID (A) 3V 40 40 125°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 25°C 1 5 10 2 2.5 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V 8 RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=10V 1.8 VGS=4.5V ID=10A 1.6 17 5 2 VGS=10V10 1.4 1.2 ID=12A 1 0.8 2 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+01 ID=12A 40 1.0E+00 15 125°C IS (A) RDS(ON) (mΩ Ω) 20 125°C 1.0E-01 25°C 10 1.0E-02 5 25°C 1.0E-03 0 0 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: May 2012 2 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=12A 8 2000 Capacitance (pF) VGS (Volts) Ciss 6 4 1000 2 500 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 Coss Crss 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs 100.0 10.0 160 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs RDS(ON) limited Power (W) ID (Amps) 1500 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4.8°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: May 2012 www.aosmd.com Page 4 of 7 AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 25 40 Current rating ID(A) Power Dissipation (W) 30 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 17 5 2 10 100 10 1 0.00001 0.001 0.1 0 18 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 3: May 2012 www.aosmd.com Page 5 of 7 AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.8 20A 0.7 10A 1.0E-02 0.6 VDS=30V 0.5 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 0.4 5A 0.3 IS=1A 0.2 1.0E-05 0.1 0 1.0E-06 50 100 150 0 200 Temperature (°C) Figure 16: Diode Reverse Leakage Current vs. Junction Temperature 15 12 100 150 200 Temperature (°C) Figure 17: Diode Forward voltage vs. Junction Temperature 15 3 di/dt=800A/µs di/dt=800A/µs 125ºC 12 50 10 2.5 12 125ºC 25ºC 0 0 5 10 15 125ºC trr 6 20 25 2 3 0 0 30 0 0 10 5 10 15 20 15 8 12 6 9 5 trr (ns) 4 125ºC Irm (A) Qrr 30 2.5 Is=12A 125ºC 25ºC 25 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2 10 Qrr (nC) 0.5 25ºC Is=12A 125ºC 1 125ºC S IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 15 1.5 25ºC 4 Irm 3 9 25ºC 1.5 trr 125ºC 6 S 6 6 trr (ns) 25ºC Qrr 2 Irm (A) Qrr (nC) 8 9 S 0 1 S 25ºC Irm 0 0 200 400 600 800 2 3 0 0 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 3: May 2012 0.5 25ºC 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AON7700 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 3: May 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7