Jiangsu B5819W Schottky barrier diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5819W
SOD-123
SCHOTTKY BARRIER DIODE
FEATURES:
1.05
Power dissipation
PD :
450
mW(Tamb=25℃)
Collector current
IF :
1
A
Collector-base voltage
VR :
40
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
3.70
0.55
1.6
2.70
Unit:mm
MARKING:SL
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
unless
otherwise
Symbol
Test
V(BR)
IR= 1mA
Reverse voltage leakage current
IR
VR=40V
VR=4V
VR=6V
1
0.05
0.075
IF=0.1A
0.45
Forward voltage
VF
IF=1A
0.6
IF=3A
0.9
Reverse breakdown voltage
Diode capacitance
CD
VR=4V
conditions
specified)
MIN
MAX
40
f=1MHz
UNIT
V
120
mA
V
pF
SOD-123 PACKAGE OUTLINE DIMENSIONS
E
A2
D
b
A1
A
E1
L
c
0.20
L1
θ
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.450
0.650
0.018
0.026
c
0.080
0.150
0.003
0.006
D
1.500
1.700
0.059
0.067
E
2.600
2.800
0.102
0.110
E1
3.550
3.850
0.140
L
0.152
0.020REF
0.500REF
L1
0.250
0.450
0.010
0.018
θ
0°
8°
0°
8°
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