Order this document by MRW3001/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5.0 Watts Power Gain — 5.0 to 7.0 dB Min Collector Efficiency — 30% Min 5.0 – 7.0 dB 1.5 – 3.0 GHz 1.0 – 5.0 WATTS MICROWAVE POWER TRANSISTORS • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol 3001 3003 3005 Unit Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.5 Vdc TJ 200 °C Tstg – 65 to + 200 °C Symbol Max Unit Operating Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS Characteristic RθJC Thermal Resistance, RF, Junction to Case 35 17 CASE 328A–03, STYLE 1 (GP–13) MRW3001, 3003, 3005 °C/W 8.5 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Characteristic Min Typ Max Unit 50 50 50 — — — — — — 45 45 45 — — — — — — V(BR)EBO 3.5 — — Vdc ICBO — — — — — — 0.5 0.75 1.25 mAdc 10 10 10 — — — 120 120 120 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) (IC = 30 mA, VBE = 0) (IC = 50 mA, VBE = 0) MRW3001 MRW3003 MRW3005 V(BR)CES Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) (IC = 3.0 mA, IE = 0) (IC = 5.0 mA, IE = 0) MRW3001 MRW3003 MRW3005 V(BR)CBO Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) Vdc MRW3001 MRW3003 MRW3005 Vdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) (IC = 300 mA, VCE = 5.0 V) (IC = 500 mA, VCE = 5.0 V) hFE MRW3001 MRW3003 MRW3005 — (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 Motorola, Inc. 1994 MRW3001 MRW3003 MRW3005 2–1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — — — 3.5 5.7 8.4 4.0 7.0 10 pF 7.0 6.0 5.0 — — — — — — 30 30 30 — — — — — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) MRW3001 MRW3003 MRW3005 FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) MRW3001 MRW3003 MRW3005 GPB Collector Efficiency (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) MRW3001 MRW3003 MRW3005 dB ηc % ψ Load Mismatch (VCE = 28 V, f = 3.0 GHz, Load VSWR = ∞:1, All Phase Angles) Pout = 1.0 W MRW3001 Pout = 3.0 W MRW3003 Pout = 5.0 W MRW3005 No Degradation in Output Power MRW3001 TYPICAL CHARACTERISTICS 2 GHz 2.3 GHz 3 GHz 1.5 Po(sat) 2 50 η c , EFFICIENCY (%) f = 1.5 GHz 2 1.5 1 0.5 0 60 2.5 Psat, SATURATED OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 2.5 0 0.05 0.1 0.15 0.2 Pin, INPUT POWER (WATTS) 0.25 40 ηc @ 1 W 1 30 0.5 20 0 0.3 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 2. Psat and η versus Frequency Figure 1. Output Power versus Input Power 2.3 2 3 Zin f = 1.5 GHz 3 0.2 0.4 0.6 0.8 1.0 1.5 2 3 4 5 10 Zo = 50 Ω 2.3 2 ZOL* f = 1.5 GHz Figure 3. Series Equivalent Input/Output Impedance MRW3001 MRW3003 MRW3005 2–2 MOTOROLA RF DEVICE DATA MRW3003 TYPICAL CHARACTERISTICS 5 2.3 GHz 4 3 GHz 3 2 1 0 0 0.1 0.2 0.3 0.4 Pin, INPUT POWER (WATTS) 0.5 0.6 8 80 6 Po(sat) 60 4 ηc @ 3 W 40 2 0 η c , EFFICIENCY (%) 2 GHz Pin, INPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 1.5 GHz 20 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 5. Psat and η versus Frequency Figure 4. Output Power versus Input Power 3 2.3 Zin 2 f = 1.5 GHz 3 2.3 2 0.2 ZOL* 0.4 0.6 0.8 1.0 1.5 2 3 4 5 10 Zo = 50 Ω f = 1.5 GHz Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRW3001 MRW3003 MRW3005 2–3 MRW3005 TYPICAL CHARACTERISTICS 14 1.5 GHz 2 GHz 6 f = 3 GHz 2.3 GHz 4 2 0 0.2 0.6 1 1.4 1.8 2.2 Psat, SATURATED OUTPUT POWER (WATTS) 12 10 40 8 20 Po(sat) 6 4 2.6 60 ηc @ 5 W η c , EFFICIENCY (%) 8 Pin, INPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 8. Psat and η versus Frequency Figure 7. Output Power versus Input Power 3 Zin 2 f = 1.5 GHz 2.3 3 2.3 2 0.2 0.4 0.6 0.8 1.0 1.5 2 3 4 5 10 Zo = 50 Ω ZOL* f = 1.5 GHz Figure 9. Series Equivalent Input/Output Impedance MTTF FACTOR (HRS x AMP2) 10,000,000 MTTF Factor (Normalized to 1.0 ampere2 Continuous Duty) The graph shown displays MTTF in hours x ampere2 emitter current for each of the 3.0 GHz devices. Life tests at elevated temperatures have correlated to better than ±10% to the theoretical prediction for metal failure. CAUTION — A calculation is required to obtain actual metal life. Sample MTTF calculations based on operating conditions are shown below. 1,000,000 MRW3005 100,000 MRW3003 10,000 Junction Temperature — °C MRW3001 To calculate metal lifetime under any set of conditions, obtain actual data or estimate from typical performance curves. Solve for TJ (°C): 1,000 (1) TJ = θJF 100 90 110 130 150 170 190 TJ, JUNCTION TEMPERATURE (°C) Figure 10. MTTF Factor versus Junction Temperature MRW3001 MRW3003 MRW3005 2–4 210 Pout x 100 + Pin – Pout hc % + TFLANGE 230 Enter graph of MTF factor versus TJ. Obtain MTF factor. Calculate metal life by: MTF Factor (2) Metal Life in Hours = IC2 (Amps) MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –B– Q 2 PL 0.15 (0.006) –A– G D 1 2 3 K N T A M M B R J E C S –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M. 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G J K N Q R S F K M SEATING PLANE INCHES MIN MAX 0.795 0.805 0.245 0.255 0.145 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.562 BSC 0.003 0.006 0.260 0.375 0.175 0.185 0.120 0.135 0.225 0.235 0.120 0.130 MILLIMETERS MIN MAX 20.20 20.45 6.23 6.47 3.69 4.31 2.93 3.17 1.40 1.65 1.15 1.39 14.27 BSC 0.08 0.15 6.60 9.52 4.45 4.69 3.05 3.42 5.72 5.97 3.05 3.30 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 328A–03 ISSUE D MOTOROLA RF DEVICE DATA MRW3001 MRW3003 MRW3005 2–5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRW3001 MRW3003 MRW3005 ◊ 2–6 *MRW3001/D* MRW3001/D MOTOROLA RF DEVICE DATA