CEL NESG2031M16-T3-A High frequency transistor Datasheet

NEC's NPN SiGe
NESG2031M16
HIGH FREQUENCY TRANSISTOR
FEATURES
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
•
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
•
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
•
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
RF
SYMBOLS
MIN
TYP
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
1.3
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
10.0
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
0.8
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
15.0
17.0
MSG
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
19.0
21.5
|S21E|
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
16.0
18.0
P1dB
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 20 mA, f = 2 GHz
OIP3
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 20 mA, f = 2 GHz dBm
fT
DC
UNITS
NF
2
Notes:
PARAMETERS AND CONDITIONS
NESG2031M16
M16
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
dBm
GHz
Cre
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current Gain3 at VCE = 2 V, IC = 5 mA
MAX
1.1
13
23
20
25
0.15
0.25
100
100
130
190
260
1. MSG = S21
S12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
California Eastern Laboratories
NESG2031M16
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
13.0
VCEO
Collector to Emitter Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
35
PT2
IC
Total Power Dissipation
mW
175
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
1.0±0.05
ORDERING INFORMATION
0.15±0.05
6
5
4
2
3
0.4
0.125+0.1
-0.05
0.5±0.05
zF
0.4
1
SUPPLYING FORM
Pin 1 (Collector), Pin 6
(Emitter) face the perforation side of the tape
0.8
QUANTITY
10 K pcs
reel
1.2+0.07
-0.05
PART NUMBER
NESG2031M16-T3-A
0.8+0.07
-0.05
PIN CONNECTIONS
4. Base
1. Collector
5. Emitter
2. Emitter
6. Emitter
3. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/13/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
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This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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