ON MJ21193 Silicon power transistor Datasheet

MJ21193, MJ21194
Preferred Device
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
•
•
•
•
•
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Total Harmonic Distortion Characterized
High DC Current Gain − hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second
Pb−Free Packages are Available*
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
250
1.43
W
W/°C
TJ, Tstg
− 65 to +200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7
°C/W
Operating and Storage Junction
Temperature Range
TO−204AA
(TO−3)
CASE 1−07
x
MEXICO
YY
WW
G
MJ2119x
MEXICO
YY WWG
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued)
ORDERING INFORMATION
Device
MJ21193
MJ21193G
MJ21194
MJ21194G
Package
Shipping †
TO−3
100 Units / Tray
TO−3
(Pb−Free)
100 Units / Tray
TO−3
100 Units / Tray
TO−3
(Pb−Free)
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
1
Publication Order Number:
MJ21193/D
MJ21193, MJ21194
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
100
mAdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
5
2.5
−
−
−
−
25
8
−
−
−
−
2.2
−
−
−
−
1.4
4
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
75
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
NOTE:
%
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
NPN MJ21194
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP MJ21193
6.5
6.0
5.5
VCE = 10 V
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
10
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
Figure 1. Typical Current Gain
Bandwidth Product
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJ21193, MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193
NPN MJ21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJ21193
NPN MJ21194
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 5. DC Current Gain, VCE = 5 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 6. DC Current Gain, VCE = 5 V
PNP MJ21193
NPN MJ21194
35
30
1.5 A
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
I C, COLLECTOR CURRENT (A)
100
Figure 3. DC Current Gain, VCE = 20 V
1000
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
15
0.5 A
10
5.0
TJ = 25°C
0
1.0
10
IC COLLECTOR CURRENT (AMPS)
0
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TJ = 25°C
0
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
MJ21193, MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193
NPN MJ21194
1.4
2.5
TJ = 25°C
2.0
IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
1.5
VBE(sat)
1.0
0.5
VCE(sat)
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
1.2
TJ = 25°C
1.0
IC/IB = 10
0.8
0.6
0.4
0.2
VCE(sat)
0
0.1
100
Figure 9. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
NPN MJ21194
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
PNP MJ21193
TJ = 25°C
VCE = 20 V (SOLID)
0.1
0.1
100
Figure 10. Typical Saturation Voltages
10
1.0
VBE(sat)
VCE = 5 V (DASHED)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
10
TJ = 25°C
VCE = 20 V (SOLID)
1.0
0.1
0.1
Figure 11. Typical Base−Emitter Voltage
VCE = 5 V (DASHED)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 12. Typical Base−Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
1 SEC
10
TC = 25°C
1.0
0.1
1.0
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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4
MJ21193, MJ21194
10000
10000
Cib
TJ = 25°C
C, CAPACITANCE (pF)
1000
Cob
Cib
1000
Cob
f(test) = 1 MHz
100
0.1
f(test) = 1 MHz
1.0
10
100
0.1
100
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21193 Typical Capacitance
Figure 15. MJ21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
TJ = 25°C
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
50 W
SOURCE
AMPLIFIER
DUT
0.5 W
0.5 W
DUT
−50 V
Figure 17. Total Harmonic Distortion Test Circuit
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5
8.0 W
100
MJ21193, MJ21194
PACKAGE DIMENSIONS
TO−204AA (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
A
N
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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MJ21193/D