Mitsubishi CM400DY-66H Hvigbt (high voltage insulated gate bipolar transistor) module Datasheet

MITSUBISHI HVIGBT MODULES
CM400DY-66H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400DY-66H
● IC ................................................................... 400A
● VCES ....................................................... 3300V
● Insulated Type
● 2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
4 - M8 NUTS
57±0.25
20
57±0.25
C2
CM
C1
E1
C1
140
124±0.25
G1
G2
E2
E1
E2
CIRCUIT DIAGRAM
E1
G2
E2(C1)
C2
G1
7.2
5 - M4 NUTS
E2
C2
C2
40
E1
6 - φ 7 MOUNTING HOLES
36.3
24.5
48.8
53.6
15
61.5
5.7
18
39.5
LABEL
30
28
5
38
15
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
Conditions
VGE = 0V
VCE = 0V
DC, TC = 60°C
Pulse
Ratings
3300
±20
400
800
400
800
3400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1.
2.
3.
4.
VCE = VCES, VGE = 0V
Min
—
Limits
Typ
—
IC = 40mA, VCE = 10V
4.5
6.0
7.5
V
—
4.40
4.80
40
4.0
1.2
1.9
—
—
—
—
3.30
—
100
—
—
0.016
0.5
5.72
—
—
—
—
—
1.00
2.00
2.00
1.00
4.29
1.20
—
0.036
0.072
—
µA
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
VGE = VGES, VCE = 0V
Tj = 25°C
IC = 400A, VGE = 15V
Tj = 125°C
(Note 4)
VCE = 10V
VGE = 0V
VCC = 1650V, IC = 400A, VGE = 15V
VCC = 1650V, IC = 400A
VGE1 = VGE2 = 15V
RG = 7.5Ω
Resistive load switching operation
IE = 400A, VGE = 0V
IE = 400A
die / dt = –800A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
5
Unit
mA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T j) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
800
800
VGE=15V
VGE=10V
400
VGE=20V
VGE=9V
200
0
2
4
6
VGE=8V
VGE=7V
8
10
COLLECTOR CURRENT IC (A)
VGE=14V
VCE=10V
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0
200
400
600
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
VGE=11V
VGE=13V
600
0
EMITTER-COLLECTOR VOLTAGE VEC (V)
VGE=12V
8
IC = 800A
IC = 400A
6
4
IC = 160A
2
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
6
4
2
Tj = 25°C
Tj = 125°C
0
Tj = 25°C
COLLECTOR CURRENT IC (A)
8
0
10
0
800
200
400
600
EMITTER CURRENT IE (A)
800
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR CURRENT IC (A)
Tj=25°C
102
7
5
3
2
101
7
5
3
2
Cies
Coes
100
Cres
7
5
3 VGE = 0V, Tj = 25°C
2 Cies, Coes : f = 100kHz
: f = 1MHz
Cres
–1
10
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-66H
td(on)
tr
3
2
10–1
7
5
SWITCHING ENERGY (J/P)
td(off)
tf
5 7 102
2 3
5 7 103
2 3
REVERSE RECOVERY TIME trr (µs)
100
7
5
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
101
103
7
7
5
5
Irr
3
3
2
2
100
7
5
102
7
5
trr
3
2
3
VCC = 1650V, Tj = 125°C
2
Inductive load
VGE = ±15V, RG = 7.5Ω
10–1
5
5 7 102
2 3
5 7 103
2 3
101
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2.0
VCC = 1650V, VGE = ±15V,
RG = 7.5Ω, Tj = 125°C,
Inductive load
1.5
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
5.0
VCC = 1650V, IC = 400A,
VGE = ±15V, Tj = 125°C,
4.0 Inductive load
Eon
1.0
Eoff
0.5
Eon
3.0
2.0
1.0
Eoff
Erec
0
0
200
400
600
0
800
20
40
60
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
VCC = 1650V
IC = 400A
16
12
8
4
0
0
CURRENT (A)
20
GATE-EMITTER VOLTAGE VGE (V)
5
COLLECTOR CURRENT IC (A)
SWITCHING ENERGY (J/P)
SWITCHING TIMES (µs)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
VCC = 1650V, VGE = ±15V
3 RG = 7.5Ω, Tj = 125°C
2 Inductive load
0
1000
2000
3000
GATE CHARGE QG (nC)
4000
REVERSE RECOVERY CURRENT Irr (A)
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
101
7
5
3
2
100
7
5
3
2
80
Single Pulse
TC = 25°C
Rth(j – c)Q = 0.036K/ W
Rth(j – c)R = 0.072K/ W
(Per 1/2 module)
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
Mar. 2003
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