STMicroelectronics M40Z300 5v or 3v nvram supervisor for up to 8 lpsram Datasheet

M40Z300
M40Z300W
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
FEATURES SUMMARY
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■
■
■
■
■
■
■
■
■
CONVERTS LOW POWER SRAM INTO
NVRAMs
PRECISION POWER MONITORING AND
POWER SWITCHING CIRCUITRY
AUTOMATIC WRITE-PROTECTION WHEN
VCC IS OUT-OF-TOLERANCE
TWO-INPUT DECODER ALLOWS
CONTROL FOR UP TO 8 SRAMs (with 2
devices active in parallel)
CHOICE OF SUPPLY VOLTAGES AND
POWER-FAIL DESELECT VOLTAGES:
– M40Z300:
VCC = 4.5V to 5.5V
THS = VSS: 4.5V ≤ VPFD ≤ 4.75V
THS = VOUT: 4.2V ≤ VPFD ≤ 4.5V
– M40Z300W:
VCC = 3.0V to 3.6V
THS = VSS: 2.8V ≤ VPFD ≤ 3.0V
VCC = 2.7V to 3.3V
THS = VOUT: 2.5 ≤ VPFD ≤ 2.7V
RESET OUTPUT (RST) FOR POWER ON
RESET
BATTERY LOW PIN (BL)
LESS THAN 12ns CHIP ENABLE ACCESS
PROPAGATION DELAY (for 5.0V device)
PACKAGING INCLUDES A 28-LEAD SOIC
AND SNAPHAT® TOP (to be ordered
separately), OR A 16-LEAD SOIC
SOIC PACKAGE PROVIDES DIRECT
CONNECTION FOR A SNAPHAT TOP
WHICH CONTAINS THE BATTERY
February 2005
Figure 1. 16-pin SOIC Package
16
1
SO16 (MQ)
Figure 2. 28-pin SOIC Package
SNAPHAT (SH)
Crystal/Battery
28
1
SOH28 (MH)
1/21
M40Z300, M40Z300W
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. 16-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 2. 28-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3.
Table 1.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M40Z300 16-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M40Z300W 16-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Hardware Hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.....4
.....4
.....5
.....5
.....5
.....6
OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Two to Four Decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 8. Address-Decode Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data Retention Lifetime Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power-on Reset Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Battery Low Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VCC Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 9. Supply Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 3. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 4. DC and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 10.AC Testing Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 6. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11.Power Down Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12.Power Up Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 7. Power Down/Up Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 13.SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline. 15
Table 8. SOH28 – 28-lead Plastic Small Outline, battery SNAPHAT, Package Mechanical Data 15
Figure 14.SH – 4-pin SNAPHAT Housing for 48mAh Battery, Package Outline . . . . . . . . . . . . . . . 16
Table 9. SH – 4-pin SNAPHAT Housing for 48mAh Battery, Package Mechanical Data . . . . . . . 16
Figure 15.SH – 4-pin SNAPHAT Housing for 120mAh Battery, Package Outline . . . . . . . . . . . . . . 17
Table 10. SH – 4-pin SNAPHAT Housing for 120mAh Battery, Package Mechanical Data . . . . . . 17
Figure 16.SO16 – 16-lead Plastic Small Outline, 150 mils body width, Package Outline . . . . . . . . 18
Table 11. SO16 – 16-lead Plastic Small Outline, 150 mils body width, Package Mechanical Data 18
2/21
M40Z300, M40Z300W
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 12. Ordering Information Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 13. SNAPHAT® Battery Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 14. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3/21
M40Z300, M40Z300W
DESCRIPTION
The M40Z300/W NVRAM SUPERVISOR is a selfcontained device which converts a standard lowpower SRAM into a non-volatile memory. A precision voltage reference and comparator monitors
the VCC input for an out-of-tolerance condition.
When an invalid VCC condition occurs, the conditioned chip enable outputs (E1CON to E4CON) are
forced inactive to write-protect the stored data in
the SRAM. During a power failure, the SRAM is
switched from the VCC pin to the lithium cell within
the SNAPHAT® to provide the energy required for
data retention. On a subsequent power-up, the
SRAM remains write protected until a valid power
condition returns.
The 28-pin, 330mil SOIC provides sockets with
gold plated contacts for direct connection to a separate SNAPHAT housing containing the battery.
The SNAPHAT housing has gold plated pins
which mate with the sockets, ensuring reliable
connection. The housing is keyed to prevent improper insertion. This unique design allows the
SNAPHAT battery package to be mounted on top
of the SOIC package after the completion of the
surface mount process which greatly reduces the
board manufacturing process complexity of either
directly soldering or inserting a battery into a soldered holder. Providing non-volatility becomes a
“SNAP.” The 16-pin SOIC provides battery pins for
an external user-supplied battery.
Insertion of the SNAPHAT housing after reflow
prevents potential battery damage due to the high
temperatures required for device surface-mounting. The SNAPHAT housing is also keyed to prevent reverse insertion.
The 28-pin SOIC and battery packages are
shipped separately in plastic anti-static tubes or in
Tape & Reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number
is
“M4ZXX-BR00SH”
(see
Table
13., page 19).
Caution: Do not place the SNAPHAT battery top
in conductive foam, as this will drain the lithium
button-cell battery.
Figure 3. Logic Diagram
Table 1. Signal Names
THS
Threshold Select Input
E
Chip Enable Input
VOUT
E1CON - E4CON
Conditioned Chip Enable
Output
E
BL
A, B
Decoder Inputs
B
E1CON
RST
Reset Output (Open Drain)
E2CON
BL
Battery Low Output (Open
Drain)
E3CON
VOUT
Supply Voltage Output
E4CON
VCC
Supply Voltage
RST
VSS
Ground
B+
Positive Battery Pin
B–
Negative Battery Pin
NC
Not Connected Internally
VCC
B +(1)
THS
A
M40Z300
M40Z300W
VSS
B –(1)
AI02242
Note: 1. For 16-pin SOIC package only.
4/21
Note: For M40Z300W, B– must be connected to the negative battery terminal only (not to Pin 8, VSS).
M40Z300, M40Z300W
Figure 4. 28-pin SOIC Connections
VOUT
NC
NC
RST
NC
A
NC
B
NC
BL
NC
NC
THS
VSS
28
1
2
27
3
26
4
25
5
24
6
23
7 M40Z300 22
8 M40Z300W 21
9
20
10
19
11
18
12
17
13
16
14
15
Figure 6. M40Z300W 16-pin SOIC Connections
VCC
E
NC
NC
NC
E1CON
E2CON
NC
E3CON
NC
NC
NC
E4CON
NC
VOUT
NC
RST
A
B
BL
THS
VSS
16
1
2
15
3
14
4
13
M40Z300W
5
12
6
11
7
10
8
9
VCC
B–
E
E1CON
E2CON
E3CON
E4CON
B+
AI06350
AI02243
Figure 5. M40Z300 16-pin SOIC Connections
VOUT
NC
RST
A
B
BL
THS
VSS
1
2
3
4
5
6
7
8
16
15
14
13
M40Z300
12
11
10
9
Note: For M40Z300W, B– must be connected to the negative battery terminal only (not to Pin 8, VSS).
VCC
B+
E
E1CON
E2CON
E3CON
E4CON
B–
AI03624
5/21
M40Z300, M40Z300W
Figure 7. Hardware Hookup
3.0V, 3.3V or 5V
VCC
VOUT
0.1µF
VCC
VCC
VCC
VCC
E2(1)
E2(1)
E2(1)
E2(1)
CMOS
SRAM
M40Z300
M40Z300W
0.1µF
CMOS
SRAM
0.1µF
E
A
B
E
Threshold
CMOS
SRAM
0.1µF
E
CMOS
SRAM
0.1µF
E
E
E1CON
E2CON
E3CON
E4CON
THS
RST
VSS
BL
To Microprocessor
To Battery Monitor Circuit
AI02395
Note: 1. If the second chip enable pin (E2) is unused, it should be tied to VOUT.
6/21
M40Z300, M40Z300W
OPERATION
E1CON to E4CON are unconditionally driven high,
write protecting the SRAM. A power failure during
a WRITE cycle may corrupt data at the currently
addressed location, but does not jeopardize the
rest of the SRAM's contents. At voltages below
VPFD (min), the user can be assured the memory
will be write protected within the Write Protect
Time (tWPT) provided the VCC fall time exceeds tF
(see Figure 8., page 8).
As VCC continues to degrade, the internal switch
disconnects VCC and connects the internal battery
to VOUT. This occurs at the switchover voltage
(VSO). Below the VSO, the battery provides a voltage VOHB to the SRAM and can supply current
IOUT2 (see Table 6., page 12).
When VCC rises above VSO, VOUT is switched
back to the supply voltage. Outputs E1CON to
E4CON are held inactive for tCER (120ms maximum) after the power supply has reached VPFD,
independent of the E input, to allow for processor
stabilization (see Figure 12., page 13).
The M40Z300/W, as shown in Figure 7., page 6,
can control up to four (eight, if placed in parallel)
standard low-power SRAMs. These SRAMs must
be configured to have the chip enable input disable all other input signals. Most slow, low-power
SRAMs are configured like this, however many
fast SRAMs are not. During normal operating conditions, the conditioned chip enable (E1CON to
E4CON) output pins follow the chip enable (E) input
pin with timing shown in Figure 8., page 8 and Table 7., page 14. An internal switch connects VCC
to VOUT. This switch has a voltage drop of less
than 0.3V (IOUT1).
When VCC degrades during a power failure,
E1CON to E4CON are forced inactive independent
of E. In this situation, the SRAM is unconditionally
write protected as VCC falls below an out-of-tolerance threshold (VPFD). For the M40Z300 the power fail detection value associated with VPFD is
selected by the Threshold Select (THS) pin and is
shown in Table 6., page 12. For the M40Z300W,
the THS pin selects both the supply voltage and
VPFD (also shown in Table 6., page 12).
Note: In either case, THS pin must be connected
to either VSS or VOUT.
If chip enable access is in progress during a power
fail detection, that memory cycle continues to completion before the memory is write protected. If the
memory cycle is not terminated within time tWPT,
Two to Four Decode
The M40Z300/W includes a 2 input (A, B) decoder
which allows the control of up to 4 independent
SRAMs. The Truth Table for these inputs is shown
in Table 2.
Table 2. Truth Table
Inputs
Outputs
E
B
A
E1CON
E2CON
E3CON
E4CON
H
X
X
H
H
H
H
L
L
L
L
H
H
H
L
L
H
H
L
H
H
L
H
L
H
H
L
H
L
H
H
H
H
H
L
7/21
M40Z300, M40Z300W
Figure 8. Address-Decode Time
A, B
tAS
E
tEDL
tEDH
E1CON - E4CON
AI02551
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay between E1CON E4CON.
Data Retention Lifetime Calculation
Power-on Reset Output
Most low power SRAMs on the market today can
be used with the M40Z300/W NVRAM SUPERVISOR. There are, however some criteria which
should be used in making the final choice of which
SRAM to use. The SRAM must be designed in a
way where the chip enable input disables all other
inputs to the SRAM. This allows inputs to the
M40Z300/W and SRAMs to be “Don't Care” once
VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0V. The
chip enable access time must be sufficient to meet
the system needs with the chip enable propagation delays included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for
the system, it is important to review the data retention current specifications for the particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0V. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally
at elevated temperatures). The system level requirements will determine the choice of which value to use.
The data retention current value of the SRAMs can
then be added to the IBAT value of the M40Z300/
W to determine the total current requirements for
data retention. The available battery capacity for
the SNAPHAT® of your choice can then be divided
by this current to determine the amount of data retention available (see Table 13., page 19).
CAUTION: Take care to avoid inadvertent discharge through VOUT and E1CON - E4CON after
battery has been attached.
For a further more detailed review of lifetime calculations, please see Application Note AN1012.
All microprocessors have a reset input which forces them to a known state when starting. The
M40Z300/W has a reset output (RST) pin which is
guaranteed to be low within tWPT of VPFD (see 7).
This signal is an open drain configuration. An appropriate pull-up resistor should be chosen to control the rise time. This signal will be valid for all
voltage conditions, even when VCC equals VSS.
Once VCC exceeds the power failure detect voltage VPFD, an internal timer keeps RST low for
tREC to allow the power supply to stabilize.
8/21
Battery Low Pin
The M40Z300/W automatically performs battery
voltage monitoring upon power-up, and at factoryprogrammed time intervals of at least 24 hours.
The Battery Low (BL) pin will be asserted if the
battery voltage is found to be less than approximately 2.5V. The BL pin will remain asserted until
completion of battery replacement and subsequent battery low monitoring tests, either during
the next power-up sequence or the next scheduled
24-hour interval.
If a battery low is generated during a power-up sequence, this indicates that the battery is below
2.5V and may not be able to maintain data integrity
in the SRAM. Data should be considered suspect,
and verified as correct. A fresh battery should be
installed.
If a battery low indication is generated during the
24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal VCC is
supplied. In order to insure data integrity during
subsequent periods of battery back-up mode, the
battery should be replaced. The SNAPHAT® top
should be replaced with valid VCC applied to the
device.
M40Z300, M40Z300W
The M40Z300/W only monitors the battery when a
nominal VCC is applied to the device. Thus applications which require extensive durations in the
battery back-up mode should be powered-up periodically (at least once every few months) in order
for this technique to be beneficial. Additionally, if a
battery low is indicated, data integrity should be
verified upon power-up via a checksum or other
technique. The BL pin is an open drain output and
an appropriate pull-up resistor to VCC should be
chosen to control the rise time.
VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in Figure
9.) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recommends connecting a schottky diode from VCC to
VSS (cathode connected to VCC, anode to VSS).
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
Figure 9. Supply Voltage Protection
VCC
VCC
0.1µF
DEVICE
VSS
AI00622
9/21
M40Z300, M40Z300W
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other relevant quality documents.
Table 3. Absolute Maximum Ratings
Symbol
TA
TSTG
TSLD(1,2)
Parameter
Value
Unit
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
SNAPHAT®
–40 to 85
°C
SOIC
–55 to 125
°C
260
°C
–0.3 to VCC + 0.3
V
M40Z300
–0.3 to 7.0
V
M40Z300W
–0.3 to 4.6
V
Ambient Operating Temperature
Storage Temperature
Lead Solder Temperature for 10 seconds
VIO
Input or Output Voltage
VCC
Supply Voltage
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. For SO package, standard (SnPb) lead finish: Reflow at peak temperature of 225°C (total thermal budget not to exceed 180°C for
between 90 to 150 seconds).
2. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal budget not to exceed 245°C
for greater than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
10/21
M40Z300, M40Z300W
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. Designers should check that the operating conditions
in their projects match the measurement conditions when using the quoted parameters.
Table 4. DC and AC Measurement Conditions
Parameter
M40Z300
M40Z300W
4.5 to 5.5V
2.7 to 3.6V
Grade 1
0 to 70°C
0 to 70°C
Grade 6
–40 to 85°C
–40 to 85°C
Load Capacitance (CL)
100pF
50pF
Input Rise and Fall Times
≤ 5ns
≤ 5ns
0 to 3V
0 to 3V
1.5V
1.5V
Max
Unit
Input Capacitance
8
pF
Input/Output Capacitance
10
pF
VCC Supply Voltage
Ambient Operating Temperature
Input Pulse Voltages
Input and Output Timing Ref. Voltages
Note: Output High Z is defined as the point where data is no longer driven.
Figure 10. AC Testing Load Circuit
333Ω
DEVICE
UNDER
TEST
CL = 100pF
or 50pF
CL includes JIG capacitance
1.73V
AI02393
Note: 50pF for M40Z300W.
Table 5. Capacitance
Symbol
CIN
COUT(3)
Parameter(1,2)
Min
Note: 1. Sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
11/21
M40Z300, M40Z300W
Table 6. DC Characteristics
Sym
Parameter
Test Condition(1)
M40Z300
M40Z300W
Unit
Min
Typ
0V ≤ VIN ≤ VCC
Max
ILI(2)
Input Leakage Current
ICC
Supply Current
VIL
Input Low Voltage
–0.3
0.8
VIH
Input High Voltage
2.2
VCC + 0.3
Min
Typ
±1
Outputs open
3
Max
±1
µA
4
mA
–0.3
0.8
V
2.0
VCC + 0.3
V
6
2
Output Low Voltage
IOL = 4.0mA
0.4
0.4
V
Output Low Voltage
(open drain)(3)
IOL = 10mA
0.4
0.4
V
VOH
Output High Voltage
IOH = –2.0mA
2.4
VOHB
VOH Battery Back-up(4)
IOUT2 = –1.0µA
2.0
IOUT1
VOUT Current (Active)
VOL
V
150
100
mA
Threshold Select
Voltage
VSS
Power-fail Deselect
Voltage (THS = VSS)
4.5
Power-fail Deselect
Voltage (THS = VOUT)
4.2
Note: 1.
2.
3.
4.
3.6
VOUT > VCC –0.2
THS
Battery Voltage
2.9
mA
Data Retention Mode
Current(5)
VBAT
2.0
150
ICCDR
Battery Back-up
Switchover Voltage
3.6
250
VOUT Current (Battery
Back-up)
VSO
2.9
V
VOUT > VCC –0.3
IOUT2
VPFD
2.4
VOUT > VBAT –0.3
100
100
100
100
nA
VOUT
V
VOUT
VSS
4.6
4.75
2.8
2.9
3.0
V
4.35
4.5
2.5
2.6
2.7
V
3.0
2.0
µA
2.9
2.5
3.6
2.0
2.9
V
3.6
V
Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
Outputs deselected.
For RST & BL pins (Open Drain).
Chip Enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery back-up mode.
Higher leakage currents will reduce battery life.
5. Measured with VOUT and E1CON - E4CON open.
12/21
M40Z300, M40Z300W
Figure 11. Power Down Timing
VCC
VPFD (max)
VPFD
VPFD (min)
VSO
tF
tFB
E
tWPT
VOHB
E1CON-E4CON
RST
AI02398B
Figure 12. Power Up Timing
VCC
VPFD (max)
VPFD
VPFD (min)
VSO
tR
tRB
tCER
E
tEDH
E1CON-E4CON
tEDL
VOHB
tREC
RST
AI02399B
13/21
M40Z300, M40Z300W
Table 7. Power Down/Up Mode AC Characteristics
Parameter(1)
Symbol
tF(2)
VPFD (max) to VPFD (min) VCC Fall Time
tFB(3)
VPFD (min) to VSS VCC Fall Time
tR
Chip Enable Propagation Delay Low
tEDH
Chip Enable Propagation Delay High
tCER
tREC(4)
tWPT
tRB
Max
Unit
300
µs
M40Z300
10
µs
M40Z300W
150
µs
10
µs
VPFD(min) to VPFD (max) VCC Rise Time
tEDL
tAS
Min
M40Z300
12
ns
M40Z300W
20
ns
M40Z300
10
ns
M40Z300W
20
ns
A, B set up to E
0
ns
Chip Enable Recovery
40
120
ms
VPFD (max) to RST High
40
120
ms
M40Z300
40
150
µs
M40Z300W
40
250
µs
Write Protect Time
VSS to VPFD (min) VCC Rise Time
1
µs
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC
passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. tREC (min) = 20ms for industrial temperature Grade 6 device.
14/21
M40Z300, M40Z300W
PACKAGE MECHANICAL INFORMATION
Figure 13. SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline
A2
A
C
B
eB
e
CP
D
N
E
H
A1
α
L
1
SOH-A
Note: Drawing is not to scale.
Table 8. SOH28 – 28-lead Plastic Small Outline, battery SNAPHAT, Package Mechanical Data
mm
inches
Symbol
Typ
Min
A
Max
Typ
Min
3.05
Max
0.120
A1
0.05
0.36
0.002
0.014
A2
2.34
2.69
0.092
0.106
B
0.36
0.51
0.014
0.020
C
0.15
0.32
0.006
0.012
D
17.71
18.49
0.697
0.728
E
8.23
8.89
0.324
0.350
–
–
–
–
eB
3.20
3.61
0.126
0.142
H
11.51
12.70
0.453
0.500
L
0.41
1.27
0.016
0.050
α
0°
8°
0°
8°
N
28
e
CP
1.27
0.050
28
0.10
0.004
15/21
M40Z300, M40Z300W
Figure 14. SH – 4-pin SNAPHAT Housing for 48mAh Battery, Package Outline
A1
A2
A
eA
A3
B
L
eB
D
E
SHZP-A
Note: Drawing is not to scale.
Table 9. SH – 4-pin SNAPHAT Housing for 48mAh Battery, Package Mechanical Data
mm
inches
Symbol
Typ
Min
A
Typ
Min
9.78
Max
0.385
A1
6.73
7.24
0.265
0.285
A2
6.48
6.99
0.255
0.275
A3
16/21
Max
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
14.22
14.99
0.560
0.590
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
M40Z300, M40Z300W
Figure 15. SH – 4-pin SNAPHAT Housing for 120mAh Battery, Package Outline
A1
A2
A
eA
A3
B
L
eB
D
E
SHZP-A
Note: Drawing is not to scale.
Table 10. SH – 4-pin SNAPHAT Housing for 120mAh Battery, Package Mechanical Data
mm
inches
Symbol
Typ
Min
A
Max
Typ
Min
10.54
Max
0.415
A1
8.00
8.51
0.315
.0335
A2
7.24
8.00
0.285
0.315
A3
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
17.27
18.03
0.680
0.710
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
17/21
M40Z300, M40Z300W
Figure 16. SO16 – 16-lead Plastic Small Outline, 150 mils body width, Package Outline
A2
A
C
B
CP
e
D
N
E
H
1
A1
α
L
SO-b
Note: Drawing is not to scale.
Table 11. SO16 – 16-lead Plastic Small Outline, 150 mils body width, Package Mechanical Data
mm
inches
Symbol
Typ.
Min.
A
Typ.
Min.
1.75
A1
0.10
A2
Max.
0.069
0.25
0.004
1.60
0.010
0.063
B
0.35
0.46
0.014
0.018
C
0.19
0.25
0.007
0.010
D
9.80
10.00
0.386
0.394
E
3.80
4.00
0.150
0.158
–
–
–
–
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
α
0°
8°
0°
8°
N
16
e
CP
18/21
Max.
1.27
0.050
16
0.10
0.004
M40Z300, M40Z300W
PART NUMBERING
Table 12. Ordering Information Example
Example:
M40Z
300W
MH
1
TR
Device Type
M40Z
Supply and Write Protect Voltage
300 = VCC = 4.5 to 5.5V
THS = VSS = 4.5V ≤ VPFD ≤ 4.75V
THS = VOUT = 4.2V ≤ VPFD ≤ 4.5V
300W = VCC = 3.0 to 3.6V
THS = VSS = 2.8V ≤ VPFD ≤ 3.0V
VCC = 2.7V to 3.3V
THS = VOUT = 2.5V ≤ VPFD ≤ 2.7V
Package
MH (1) = SOH28
MQ = SO16
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Shipping Method for SOIC
blank = Tubes
TR = Tape & Reel
Note: 1. The SOIC package (SOH28) requires the battery package (SNAPHAT®) which is ordered separately under the part number
“M4Zxx-BR00SH” in plastic tube or “M4Zxx-BR00SHTR” in Tape & Reel form.
Caution: Do not place the SNAPHAT battery package “M4Zxx-BR00SH” in conductive foam as it will drain the lithium button-cell
battery.
For other options, or for more information on any aspect of this device, please contact the ST Sales Office
nearest you.
Table 13. SNAPHAT® Battery Table
Part Number
Description
Package
M4Z28-BR00SH
Lithium Battery (48mAh) SNAPHAT
SH
M4Z32-BR00SH
Lithium Battery (120mAh) SNAPHAT
SH
19/21
M40Z300, M40Z300W
REVISION HISTORY
Table 14. Document Revision History
Date
Version
March 1999
1.0
First Issue
08-Mar-00
1.1
Document Layout changed; SO16 package added; Battery Capacity changed (Table 13)
22-Sep-00
1.2
SO16 package measures change
23-Feb-01
1.3
Added information for Industrial Temperature (Table 3, 7, 12)
30-May-01
1.4
Change “Controller” references to “SUPERVISOR”
10-Jul-01
2.0
Reformatted; added temp/voltage info. to tables (Table 6, 7); Figures changed (Figures 3,
5, 7, 10, 8)
01-Aug-01
2.1
E2 connections added to Hookup (Figure 7)
15-Jan-02
2.2
16-pin SOIC Connections split, graphic added (Figure 6); addition to hardware hookup
(Figure 7)
13-May-02
2.3
Modify reflow time and temperature footnote (Table 3)
31-Oct-03
2.4
Update DC Characteristics (Table 6)
04-Nov-03
2.5
Correct DC Characteristics (Table 6)
23-Feb-05
3.0
Reformatted; IR reflow, SO package updates (Table 3)
20/21
Revision Details
M40Z300, M40Z300W
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