CEL NE6500379A-T1 3w, l/s-band medium power gaas mesfet Datasheet

NEC'S 3W, L/S-BAND
NE6500379A
MEDIUM POWER GaAs MESFET
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
PACKAGE OUTLINE 79A
Source
• LOW THERMAL RESISTANCE:
5 C/W
Functional
Characteristics
0.2 – 0.1
MIN
dBm
TYP
%
50
Drain Current
A
1.0
Saturated Drain Current
A
4.5
VP
Pinch-Off Voltage
V
RTH
Thermal Resistance
IDSS
BVGD
Gate-to-Drain Breakdown Voltage
9.0
-3.6
°C/W
V
MAX
TEST CONDITIONS
35.0
Power Added Efficiency
ID
1.2 MAX
79A
UNITS
dB
ηADD
1.0 MAX
NE6500379A
Linear Gain1
GL
4.4 MAX
0.8 – 0.15
X
9
= 25°C)
PART NUMBER
Power Out at 1dB Gain Compression
BOTTOM VIEW
Note: Unless otherwise specified, tolerance is ±0.2 mm
PACKAGE OUTLINE
CHARACTERISTICS
0.8 MAX
3.6 – 0.2
0.9 – 0.2
ELECTRICAL CHARACTERISTICS (TC
Drain
Gate
0.4 – 0.15
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent quality and control procedures
Electrical DC
Characteristics
Drain
5.7 MAX
DESCRIPTION
P1dB
E
5.7 MAX
0.6 – 0.15
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
T
Source
Gate
• HIGH OUTPUT POWER:
35 dBm TYP
SYMBOLS
1.5 – 0.2
4.2 MAX
• USABLE TO 2.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
17
f = 1.9 GHz, VDS = 6.0 V
Rg = 30 Ω
IDSQ = 500 mA (RF OFF)2
10.0
VDS = 2.5 V; VGS = 0 V
-2.6
-1.6
VDS = 2.5 V; IDS = 21 mA
5
6
Channel to Case
IGD = 21 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
NE6500379A
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
SYMBOLS
PARAMETERS
UNITS
RATINGS
PARAMETERS
UNITS
TYP
V
6.0
MAX
VDS
Drain to Source Voltage
V
15
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
V
-7.0
TCH
Channel Temperature
°C
125
IDS
Drain Current
A
5.6
GCOMP
Gain Compression
dB
3.0
IGS
Gate Current
mA
50
PT
Total Power Dissipation
W
21
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
QTY
NE6500379A-T1
1 K/Reel
NE6500379A
TYPICAL PERFORMANCE CURVES
Bulk, 50 piece min.
(TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DRAIN CURRENT vs.
DRAIN VOLTAGE
5
22 W
VGS =
4
Drain Current, ID (A)
20
15
RTH = 6 °C/W
10
5
0V
3
-0.50 V
2
-1.0 V
-1.5 V
1
-2.0 V
0
18 °C
0
50
100
0
0
150
1
2
5
4
3
Case Temperature, TC (°C)
Drain Voltage, VD (V)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
2.00
1.00
1.00
0.4
0.5
0.2
0.00
-3.50
0.00
-1.50
Gate Voltage, VG (V)
Maximum Available Gain, GMAG (dB)
0.8
0.6
6
25.0
Drain Current, ID (A)
Total Power Dissipation, PD (W)
25
Transconductance, GM (mS)
6.0
20.0
3V
300 mA
8V
500 mA
15.0
6V
500 mA
10.0
5.0
0.1
0.2
0.4
0.6
1.0
Frequency, f (GHz)
2.0
4.0
NE6500379A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
90˚
j10
S11
4.0 GHz
S22
4.0 GHz
10
0
-j10
120˚
j100
j25
25
60˚
S12
0.5 GHz
S21
0.5 GHz
150˚
50
100
180˚
0
S12
4.0 GHz
S21
4.0 GHz
S11
0.5 GHz
S22
0.5 GHz
Coordinates in Ohms
Frequency in GHz
VD = 3.0 V, ID = 300 mA
-j100
-j25
30˚
0˚
-150˚
-30˚
-120˚
-60˚
-90˚
-j50
NE6500379A
VD = 6.0 V, ID = 500 mA
FREQUENCY
GHz
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
S21
S11
MAG
0.966
0.967
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.966
0.966
0.966
0.966
0.967
0.968
0.967
0.968
0.968
0.969
0.969
0.970
0.970
0.970
0.971
0.970
0.972
0.971
0.971
0.973
0.974
0.973
0.974
0.973
0.974
ANG
-174.30
-177.11
-179.62
178.38
176.58
174.96
173.44
172.10
170.80
169.61
168.44
167.32
166.26
165.26
164.32
163.43
162.52
161.56
160.76
160.00
159.26
158.55
157.78
157.08
156.48
155.74
155.08
154.43
153.91
153.33
152.84
152.20
151.72
151.28
150.86
150.75
MAG
2.139
1.783
1.531
1.343
1.192
1.072
0.975
0.895
0.825
0.765
0.716
0.672
0.632
0.596
0.566
0.540
0.513
0.488
0.468
0.450
0.432
0.413
0.397
0.385
0.372
0.359
0.346
0.336
0.327
0.316
0.308
0.301
0.292
0.282
0.273
0.266
S12
ANG
85.82
82.99
80.36
78.11
75.93
73.74
71.58
69.70
67.81
65.81
63.89
62.25
60.58
58.64
56.79
55.24
53.75
51.90
50.11
48.58
47.36
45.84
44.14
42.59
41.43
40.09
38.46
37.25
35.97
34.75
33.35
32.01
30.79
29.50
27.94
27.01
MAG
0.014
0.014
0.014
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.016
0.016
0.015
0.015
0.015
0.015
0.016
0.016
0.015
0.016
0.016
0.017
0.018
0.018
0.018
0.019
0.019
S22
ANG
10.23
9.64
10.32
10.26
10.85
11.62
11.65
12.25
12.72
12.90
13.20
13.85
14.68
14.92
15.56
15.70
17.08
16.80
17.63
18.37
19.74
19.89
20.56
21.83
23.56
24.26
25.44
27.74
29.52
31.71
33.06
32.99
32.12
33.04
31.76
32.12
MAG
0.880
0.881
0.881
0.882
0.881
0.880
0.881
0.881
0.880
0.879
0.881
0.881
0.880
0.877
0.880
0.882
0.880
0.876
0.876
0.881
0.881
0.878
0.877
0.882
0.883
0.881
0.879
0.885
0.885
0.882
0.882
0.884
0.883
0.880
0.877
0.886
ANG
176.31
175.27
174.08
173.23
172.33
171.34
170.32
169.56
168.73
167.80
166.90
166.23
165.51
164.64
163.73
163.14
162.60
161.72
160.81
160.18
159.90
159.26
158.32
157.46
157.13
156.56
155.69
154.96
154.33
153.69
152.89
152.34
151.99
151.43
150.64
150.34
K
MAG1
0.32
0.36
0.45
0.50
0.56
0.64
0.69
0.73
0.80
0.84
0.86
0.92
1.00
1.06
1.08
1.08
1.13
1.22
1.27
1.26
1.29
1.34
1.42
1.41
1.44
1.47
1.57
1.54
1.61
1.68
1.56
1.48
1.54
1.54
1.61
1.52
(dB)
21.74
20.93
20.24
19.66
19.12
18.65
18.17
17.77
17.41
17.04
16.75
16.46
16.22
14.46
13.97
13.70
13.00
12.19
11.72
11.55
11.19
10.76
10.32
10.16
9.88
9.56
9.04
9.03
8.55
8.13
8.21
8.14
7.76
7.53
7.12
7.23
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K –
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE6500379A
NONLINEAR MODEL
SCHEMATIC
Q1
RDX
0.2 ohms
LGX
LG
0.001 nH
0.68 nH
LD
0.55 nH
LDX
0.015 nH
DRAIN
RDBX
480 ohms
GATE
CBSX
100 pF
CGS PKG
0.1 pF
CDS PKG
0.1 pF
RSX
0.2 ohms
FET NONLINEAR MODEL PARAMETERS
(1)
LSX
0.001 nH
SOURCE
Parameters
Q1
Parameters
Q1
VTO
-2.585
RG
0.2
VTOSC
0
RD
0.001
ALPHA
3
RS
0.001
BETA
1.28
RGMET
0
GAMMA
0
KF
0
GAMMADC(2)
0.035
AF
1
Q
1.7
TNOM
27
DELTA
0.02
XTI
3
VBI
0.6
EG
1.43
IS
1e-14
VTOTC
0
N
1
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
10e-12
CDS
0.5e-12
RDB
0.001
CBS
0
(3)
CGSO
25e-12
CGDO(4)
4.5e-12
DELTA1
1
DELTA2
0.2
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
GAMMA
(3) CGSO
CGS
(4) CGDO
CGD
UNITS
Parameter
capacitance
Units
picofarads
inductance
nanohenries
resistance
ohms
MODEL RANGE
Frequency: 0.4 to 8 GHz
Bias:
VDS = 3 V to 8 V, ID = 300 mA to 500 mA
Date:
8/03
NE6500379A
APPLICATION CIRCUIT (1.93 - 1.99 GHz)
VD
VG
J3
J4
C2
C8
C10
C3
C9
C11
P1
GND
C12
C13
RFOUT
J2
J1
R2R1
C6
C1
7 X
C5
T C
RFIN
C4
U1
100637
NE6500379A-EV
Contact CEL Engineering for artwork
and more detailed information.
.034
J4
J3
VG
VD
C13
C11
C9
C3
C2
L = .890
W = .010
J1
RF Input
C14
C12
L = .874
W = .010
J2
RF Output
C1
L = .200
W = .050
C5
C4 L = .140
W = .050
TF-100637
C2, C3
R1
C1, C14
C4
C5
C6
C7
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
TEST CIRCUIT BLK
2-56 X 3/16 PHILLIPS PAN HEAD
CASE 1100 pF CAP MURATA
0603 20 OHMS RESISTOR ROHM
CASE A 47 pF CAP ATC
CASE A 4.3 pF CAP ATC
CASE A 5.6 pF CAP ATC
CASE A 0.5 pF CAP ATC
CASE A 0.8 pF CAP ATC
CASE B 4.7 uF CAP AVX
0805 .1 uF CAP MURATA
0805 1000 pF CAP MURATA
IC NEC
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
C7
Er = 4.2
H = .028"
NE6500379A PARTS LIST
MA101J
MCR03J200
100A470CP150X
100A4R3CP150X
100A5R6CP150X
100A0R5CP150X
100A0R8CP150X
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE6500379A
703401
1250-003
2052-5636-02
C10
R6
NE650379A
C6
1
4
2
1
2
1
1
1
1
2
2
2
1
1
1
2
C8
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
NE6500379A
P.C.B. LAYOUT (Units in mm)
FOR 79A PACKAGE
4.0
1.7
0.5
1.0
Gate
1.2
5.9
Drain
Source
Through hole φ 0.2 × 33
0.5
0.5
6.1
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V
GAIN AND PAE vs.
OUTPUT POWER
14
60
FC = 1.96 GHz, VDS = 3 V
12
12
50
30
6
20
40
8
30
6
PAE (%)
8
Gain, GA (dB)
40
PAE (%)
Gain, GA (dB)
50
10
10
20
4
4
Gain, IDSQ = 200 mA
Gain, IDSQ = 600 mA
PAE, IDSQ = 200 mA
PAE, IDSQ = 600 mA
2
0
20
22
24
26
28
30
32
10
2
0
0
22
24
26
28
30
32
34
Output Power, POUT (dBm)
GAIN AND SATURATION POWER
vs. FREQUENCY
GAIN AND SATURATION POWER
vs. FREQUENCY
31.50
16
29.50
10
28.50
Gain, IDSQ = 100 mA
Gain, IDSQ = 800 mA
POUT, IDSQ = 100 mA
POUT, IDSQ = 800 mA
1.96
1.98
Frequency, f (GHz)
2.00
27.50
2.02
Gain, GA (dB)
12
Saturation Power, PSAT (dBm)
30.50
1.94
0
37
POUT = 17 dBm for Gain, 30 dBm for PSAT, VDS = 6 V
14
1.92
10
36
Output Power, POUT (dBm)
POUT = 10 dBm for Gain, 23 dBm for PSAT, VDS = 3 V
8
1.90
Gain, IDSQ = 200 mA
Gain, IDSQ = 600 mA
PAE, IDSQ = 200 mA
PAE, IDSQ = 600 mA
20
34
16
Gain, GA (dB)
60
FC = 1.96 GHz, VDS = 6 V
14
36
12
35
10
8
1.90
34
Gain, IDSQ = 100 mA
Gain, IDSQ = 800 mA
POUT, IDSQ = 100 mA
POUT, IDSQ = 800 mA
1.92
1.94
1.96
1.98
Frequency, f (GHz)
2.00
33
2.02
Saturation Power, PSAT (dBm)
14
GAIN AND PAE vs.
OUTPUT POWER
NE6500379A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V
Third Order Intermodulation Distortion, IM3 (dBc)
-15
Third Order Intermodulation Distortion, IM3 (dBc)
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
FC = 1.96 GHz, VDS = 3 V
-20
-25
-30
-35
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-40
-45
23
24
25
26
27
28
29
30
31
32
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
-20
FC = 1.96 GHz, VDS = 6 V
-25
-30
-35
-40
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-45
-50
33
23
25
Total Output Power, POUT (dBm)
-35
ACPR1
885KHz
-40
-40
-45
-45
ACPR (dBc)
ACPR (dBc)
29
31
33
ACPR vs. OUTPUT POWER
ACPR vs. OUTPUT POWER
-35
-50
ACPR2
885KHz
FC = 1.96 GHz, VDS = 6 V
64 CH IS95 CDMA
ACPR1
885KHz
-50
ACPR2
125MHz
-55
-55
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-60
-65
27
Total Output Power, POUT (dBm)
FC = 1.96 GHz, VDS
64 CH IS95 CDMA
23
24
25
26
= 3V
27
28
29
30
Total Output Power, POUT (dBm)
31
32
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-60
-65
33
23
25
27
29
31
33
35
Total Output Power, POUT (dBm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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