isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD638 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) ·Complement to Type BD637 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB Base Current-Continuous -0.3 A B Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD638 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -0.6 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.3 V ICES Collector Cutoff Current VCE= -100V; VBE= 0 -0.2 mA hFE-1 DC Current Gain IC= -25mA; VCE= -2V 40 hFE-2 DC Current Gain IC= -1A; VCE= -2V 25 isc Website：www.iscsemi.cn CONDITIONS MIN B 2 MAX UNIT