APTM120SK15G Buck chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • Q1 G1 AC and DC motor control Switched Mode Power Supplies Features OUT • S1 CR2 0/VBUS • • • 0/VBUS OUT Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 60 45 240 ±30 175 1250 22 50 3000 Unit V A V mΩ W A July, 2006 VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120SK15G– Rev 1 G1 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM120SK15G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions www.microsemi.com Unit mΩ V nA nF nC 15 45 3.96 mJ 2.74 6.26 mJ 3.43 Min 1200 Tj = 25°C Tj = 125°C Tc = 70°C ns 160 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω IF = 60A VR = 800V di/dt = 200A/µs Max µA 20 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω IF = 60A IF = 120A IF = 60A Unit 480 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A R G = 1.2Ω VR=1200V Typ 20.6 3.08 0.52 748 Max 500 3000 175 5 ±250 96 Chopper diode ratings and characteristics IRM 150 3 VGS = 10V VBus = 600V ID = 60A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Typ Max 250 750 Tj = 125°C 60 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 1200 Tj = 125°C 4000 Unit V µA A 2.5 V ns July, 2006 IDSS Characteristic nC 2–6 APTM120SK15G– Rev 1 Symbol APTM120SK15G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.9 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120SK15G– Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM120SK15G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 200 160 7V 6.5V 120 80 6V 40 5.5V 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 0 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 V GS=20V 0.9 0.8 60 50 40 30 20 10 0 0 40 80 120 160 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1 3 70 Normalized to VGS =10V @ 30A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 www.microsemi.com 4–6 APTM120SK15G– Rev 1 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=30A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDS on 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=60A TJ=25°C 12 10 V DS=240V VDS=600V 8 V DS =960V 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120SK15G– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120SK15G APTM120SK15G Delay Times vs Current t d(off) VDS=800V RG=1.2Ω T J=125°C L=100µH 150 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG=1.2Ω T J=125°C L=100µH 90 60 40 tr 20 t d(on) 30 0 0 20 40 60 80 100 120 140 20 I D, Drain Current (A) 60 80 100 120 I D, Drain Current (A) 140 14 VDS=800V RG=1.2Ω TJ=125°C L=100µH 10 8 Eon Eoff 6 12 Switching Energy (mJ) Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 12 4 2 10 20 40 60 80 100 120 V DS=800V ID=60A T J=125°C L=100µH Eoff 8 6 Eon Eoff 4 0 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 140 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 200 Frequency (kHz) tf 150 ZCS V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C 100 50 ZVS Hard switching 100 0 15 25 35 45 ID, Drain Current (A) 55 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120SK15G– Rev 1 July, 2006 5 T J=150°C