NJ6N60 POWER MOSFET 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The NJ6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES 1 TO-220 1 * VDS = 600V * ID = 6.2A * RDS(ON) = 1.5 ohm@VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ6N60-LI NJ6N60-BL NJ6N60F-LI NJ6N60A-LI NJ6N60D-TR NJ6N60D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ6N60 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Single Pulsed 6N60 (Note 3) Avalanche Energy 6N60-P Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F Power Dissipation TO-251 SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD RATINGS 600 ±30 6.2 6.2 24.8 440 260 13 4.5 125 40 55 UNIT V V A A A mJ mJ mJ ns W W W TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. : Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 ȍ, Starting TJ = 25°C 4. ISD 6.2A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-220F TO-251/TO-252 TO-220 TO-220F TO-251 TO-252 șJA șJC RATING 62.5 62.5 110 1.0 3.2 2.27 2.27 UNIT °C/W °C/W NJ6N60 POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250ȝA 600 V VDS = 600V, VGS = 0V 10 ȝA VGS = 30V, VDS = 0V 100 nA Forward Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage TemperatureʳCoefficient ϦBVDSS/ƸTJ ID=250ȝA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250ȝA 2.0 4.0 V 1.0 1.5 6N60 Static Drain-Source On-State VGS = 10V, ID = 3.1A ȍ RDS(ON) Resistance 6N60-P 1.0 1.5 DYNAMIC CHARACTERISTICS 770 1000 pF Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS 95 120 pF f=1.0 MHz Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 20 50 ns 70 150 ns Turn-On Rise Time 6N60 tR 6N60-P 60 100 ns VDD=300V, ID =6.2A, RG =25ȍʳ (Note 1, 2) Turn-Off Delay Time tD(OFF) 40 90 ns Turn-Off Fall Time 6N60 80 100 ns tF 6N60-P 70 100 ns 20 25 nC Total Gate Charge QG VDS=480V, ID=6.2A, Gate-Source Charge QGS 4.9 nC VGS=10 Vʳ ʳ (Note 1, 2) Gate-Drain Charge QGD 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode IS 6.2 A Forward Current Maximum Pulsed Drain-Source Diode ISM 24.8 A Forward Current Reverse Recovery Time trr 290 ns VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/ȝs (Note 1) Reverse Recovery Charge QRR 2.35 ȝC Notes: 1. Pulse Test: Pulse width 300ȝs, Duty cycle 2% 2. Essentially independent of operating temperature NJ6N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ6N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms Drain Current, ID (A) Drain Current,ID (A) Drain Current,ID (μA) Drain Current,ID (μA) NJ6N60 POWER MOSFET TYPICAL CHARACTERISTICS