Giant Magneto Resistive Position Sensor GMR S 4 Version 1.0 Data Sheet This angle sensor is based on the brand new Giant Magneto Resistive (GMR) technology. It is outstanding for the huge tolerances it offers to the user in assembly. 12.3 2.3 11.7 2.1 Chip center 0.55 ±0.15 4 3 x 1.27 = 3.81 spacing ø0.15 3, 4 Type ◆ GMR S 4 Approx. weight 0.05 g supply voltage terminals 1, 2 GMR access 3, 4 not connected not connected A 1.5 ±0.15 0.3 A 0.7 0.6 Chip 0.28 ±0.1 Pin Configuration 4.7 4.3 Flash 0.1 max 0.3 0.2 • Rotation sensing with large air gaps according to sketch below • Angle encoders • Contactless potentiometers 0.55 0.35 1 Directions of internal magnetization 2 Applications 1, 2 3.2 3.0 3 0.5 0.35 • GMR sensor on copper leadframe • Sensitive to the direction, not to the intensity of the magnetic field • Constant TC of basic resistance R and magneto resistance ∆R Injection flash 0.1 max Features GPX06981 Dimensions in mm Internal magnetization is in direction of the longest side of the housing. Marking Ordering Code ■ Q62705-K5002 ◆ new type The GMR S 4 is an angle sensor based on sputtered metallic multilayer technology. The outstanding feature of this magnetic sensor is the fact that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 … 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimeters. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R, ∆R) is possible. Data Sheet 1 1999-04-01 GMR S 4 Resistance Rotating Magnet N S GMR Sensor 0˚ Principle of operation 180˚ Output signal vs orientation of magnet R = R 0 + 0.5 * ∆ R * (1-cos α) 360˚ Angle OHS00375 Maximum Ratings Parameter Symbol Value Unit Operating temperature TA Tstg I1 GthC A GthC C Hrot – 40 … + 150 °C – 50 … + 150 °C 5 mA > 2.2 >5 mW/K mW/K < 15 kA/m Storage temperature Supply current Thermal conductivity Magnetic field 1) 1) larger fields may reduce the magnetoresistive effect irreversibly Data Sheet 2 1999-04-01 GMR S 4 Characteristics (TA = 25 °C) Parameter Symbol Value Unit Nominal supply current I1N R0 ∆R/R0 4 mA > 700 Ω ≈4 % Temperature coefficient of basic resistance TCR0 + 0.09 … + 0.12 %/K Temperature coefficient of magnetoresistance TC∆R – 0.12 … – 0.09 %/K Temperature coefficient of magnetoresistive effect TC∆R/R0 – 0.27 … – 0.23 %/K Hysteresis at Hrot = 10 kA/m Hys <2 degrees Basic resistance Magnetoresistive effect Hrot = 5 ... 15 kA/m Application Hints The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. In every case this type of circuit compensates for the TC of the resistance value R0. To compensate for the TC of the GMR effect ∆R/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a halfbridge. The output signal is doubled when a fullbridge circuit is used. In the case of linear position sensing, the electrical circuit remains unchanged. Data Sheet 3 1999-04-01