ON MJ15016G Complementary silicon high-power transistor Datasheet

2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
• Current−Gain − Bandwidth−Product @ IC = 1.0 Adc
•
•
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15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
fT = 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Symbol
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
Value
Unit
VCEO
Vdc
60
120
VCBO
2N3055A
MJ15015, MJ15016
Vdc
100
200
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
VCEV
Emitter−Base Voltage
MARKING DIAGRAMS
Vdc
100
200
VEBO
7.0
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
2N3055A
PD
115
0.65
W
W/_C
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
180
1.03
Total Device Dissipation @ TC = 25_C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
_C
TJ, Tstg
−65 to +200
Characteristics
Symbol
Max
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.52
0.98
_C/W
THERMAL CHARACTERISTICS
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
ORDERING INFORMATION
Publication Order Number:
2N3055A/D
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
60
120
−
−
Vdc
−
−
0.7
0.1
−
−
5.0
1.0
−
−
30
6.0
−
−
5.0
0.2
1.95
3.0
−
−
10
20
5.0
70
70
−
−
−
−
1.1
3.0
5.0
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
2N3055A
MJ15015, MJ15016
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
2N3055A
MJ15015, MJ15016
Collector Cutoff Current (Note 3)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
2N3055A
MJ15015, MJ15016
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)
2N3055A
MJ15015, MJ15016
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
2N3055A
MJ15015, MJ15016
IEBO
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non−repetitive)
2N3055A
MJ15015, MJ15016
(VCE = 60 Vdc)
IS/b
ICEO
ICEV
mAdc
ICEV
mAdc
mAdc
mAdc
SECOND BREAKDOWN (Note 3)
Adc
ON CHARACTERISTICS (Note 2 and 3)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
0.7
1.8
Vdc
fT
0.8
2.2
6.0
18
MHz
Cob
60
600
pF
td
−
0.5
ms
tr
−
4.0
ms
ts
−
3.0
ms
tf
−
6.0
ms
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055A, MJ15015
MJ15016
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
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2
PD(AV), AVERAGE POWER DISSIPATION (W)
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
200
150
MJ15015
MJ15016
100
2N3055A
50
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
200
TJ = 150°C
hFE , DC CURRENT GAIN
100
70
50
−55 °C
30
20
25°C
VCE = 4.0 V
10
7
5
3
2
0.2
0.3 0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMP)
7
10
15
2.8
TJ = 25°C
2.4
2
IC = 1 A
1.6
0.8
0.4
0
0.005 0.01 0.02
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
TC = 25°C
V, VOLTAGE (VOLTS)
2.5
2
1.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3
0.5 0.7
1
2
3
5
7
0.05 0.1
0.2
0.5
IB, BASE CURRENT (AMP)
1
2
5
Figure 3. Collector Saturation Region
3.5
1
8A
1.2
Figure 2. DC Current Gain
3
4A
10
20
10
5.0
MJ15016
2.0
2N3055A
MJ15015
1.0
0.1
0.2
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. “On” Voltages
Figure 5. Current−Gain — Bandwidth Product
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3
2.0
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
10
7
5
VCC
+30 V
t, TIME (s)
μ
3
7.5 W
25 ms
+13 V
SCOPE
30
W
0
2
tr
1
0.7
0.5
0.3
1N6073
−11 V
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.2
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
−5 V
0.1
td
0.2
10
7
5
400
3
200
7
10 15
TJ = 25°C
ts
2
tf
0.1
0.7
0.5
0.3
0.2
0.1
0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn−On Time
C, CAPACITANCE (pF)
t, TIME (s)
μ
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
0.3
VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25°C
0.2
0.3
0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMPS)
2N3055A
MJ15015
MJ15016
Cib
100
50
Cob
30
7
10
20
1.0
15
Figure 8. Turn−Off Times
2.0
5.0
10
20
50
100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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4
500 1000
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
COLLECTOR CUT−OFF REGION
NPN
PNP
10,000
1000
VCE = 30 V
1000
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
100
TJ = 150°C
10
100°C
1.0
IC = ICES
REVERSE
0.1
FORWARD
100
10
TJ = 150°C
1.0
100°C
IC = ICES
0.1
REVERSE
0.01
FORWARD
25°C
25°C
0.01
+0.2
+0.1
0
−0.1
−0.2
−0.3
−0.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
0.001
−0.2
−0.5
Figure 10. 2N3055A, MJ15015
+0.4
0
+0.1
+0.2
+0.3
VBE, BASE−EMITTER VOLTAGE (VOLTS)
+0.5
Figure 11. MJ15016
20
20
30 ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMPS)
−0.1
10
100 ms
1 ms
5
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2
1
100 ms
dc
10
20
60
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1ms
10
5.0
1.0ms
2.0
1.0
0.5
0.2
100
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
15
Figure 12. Forward Bias Safe Operating Area
2N3055A
20
30
60
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2N3055AG
MJ15015
MJ15015G
MJ15016
MJ15016G
120
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
2N3055A
dc
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Device
100ms
Package
Shipping
TO−204
TO−204
(Pb−Free)
100 Units / Tray
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
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5
100 Units / Tray
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3055A/D