FS10ASJ-3 High-Speed Switching Use Nch Power MOS FET REJ03G1409-0200 (Previous: MEJ02G0078-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 160 mΩ ID : 10 A Integrated Fast Recovery Diode (TYP.) : 90 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Ratings 150 ±20 10 40 10 10 40 35 – 55 to +150 – 55 to +150 Unit V V A A A A A W °C °C — 0.32 g Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS10ASJ-3 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min 150 — — 1.0 — — — — — — — — — — — — — Typ — — — 1.5 120 125 0.60 18 1800 180 85 17 23 150 75 1.0 — Max — ±0.1 0.1 2.0 160 165 0.80 — — — — — — — — 1.5 3.57 Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W trr — 90 — ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 4 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = –100 A/µs FS10ASJ-3 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 Drain Current ID (A) 40 30 20 10 0 0 50 100 150 tw = 10 µs 10 0µ s 101 7 5 3 2 100 Tc = 25°C 7 Single Pulse 5 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) VGS = 10V 5V 4V 10 VGS = 10V 5V 4V 3V 5 Tc = 25°C Pulse Test Tc = 25°C Pulse Test 3V 8 Drain Current ID (A) Drain Current ID (A) 200 102 7 5 3 2 C D Power Dissipation PD (W) 50 6 4 2 4 2.5V 3 2 1 2V 2V 0 0.4 0.8 1.2 1.6 2.0 0.4 0.6 0.8 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) ID = 15A 1.2 10A 0.8 5A 0.4 Tc = 25°C Pulse Test 2 4 6 8 Gate-Source Voltage VGS (V) Rev.2.00 0.2 Drain-Source Voltage VDS (V) 1.6 0 0 Drain-Source Voltage VDS (V) 2.0 0 0 Aug 07, 2006 page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 1.0 200 Tc = 25°C Pulse Test 160 VGS = 4V 10V 120 80 40 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS10ASJ-3 Forward Transfer Admittance vs. Drain Current (Typical) 16 12 8 4 0 Capacitance C (pF) Tc = 25°C VDS = 10V Pulse Test 0 2 4 6 8 10 Ciss 7 5 3 2 Coss Crss Tch = 25°C f = 1MHz VGS = 0V 2 100 0 10 103 7 5 4 3 2 3 4 5 7 102 Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 td(off) 102 7 5 4 3 tf tr td(on) 101 0 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 20 VGS = 0V Pulse Test Tch = 25°C ID = 10A 8 VDS = 50V 6 80V 4 100V 2 0 2 3 4 5 7 101 2 Source Current IS (A) Gate-Source Voltage VGS (V) 101 7 5 4 3 Switching Characteristics (Typical) 10 0 10 20 30 40 Gate Charge Qg (nC) Rev.2.00 2 Capacitance vs. Drain-Source Voltage (Typical) 103 101 VDS = 10V Pulse Test Tc = 25°C 75°C 125°C Drain Current ID (A) 104 7 5 3 2 102 7 5 3 2 102 7 5 4 3 Gate-Source Voltage VGS (V) Switching Time (ns) Drain Current ID (A) 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) Aug 07, 2006 page 4 of 6 50 16 12 Tc = 125°C 8 75°C 25°C 4 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 5A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS10ASJ-3 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS10ASJ-3 Package Dimensions Previous Code 1Max Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 6.1 ± 0.2 6.6 5.3 ± 0.2 0.76 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 75 Type name Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS10ASJ-3-T13 FS10ASJ-3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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