DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT54 series Schottky barrier (double) diodes Product data sheet Supersedes data of 2001 Oct 12 2002 Mar 04 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT54 series FEATURES PINNING • Low forward voltage DESCRIPTION PIN • Guard ring protected BAT54 • Small plastic SMD package. APPLICATIONS BAT54A BAT54C BAT54S 1 a k1 a1 a1 2 n.c. k2 a2 k2 3 k a1, a2 k1, k2 k1, a2 • Ultra high-speed switching • Voltage clamping • Protection circuits handbook, 2 columns 3 • Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. 1 2 Top view MARKING TYPE NUMBER BAT54 Fig.1 MARKING CODE(1) MGC421 Simplified outline (SOT23) and pin configuration. L4∗ BAT54A L42 or ∗V3 BAT54C L43 or ∗W1 BAT54S L44 or ∗V4 3 3 1 2 n.c. Note 1 2 MLC360 MLC357 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W: Made in China. (1) BAT54 (2) BAT54A 3 1 3 2 1 MLC359 (3) BAT54C 2 MLC358 (4) BAT54S Fig.2 Diode configuration and symbol. 2002 Mar 04 2 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT54 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 30 V − 200 mA − 300 mA − 600 mA storage temperature −65 +150 °C junction temperature − 125 °C − 230 mW VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 IFSM non-repetitive peak forward current tp < 10 ms Tstg Tj Per device Ptot total power dissipation Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT 500 K/W MAX. UNIT note 1 Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS Per diode VF forward voltage see Fig.3 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; see Fig.4 2 μA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF 2002 Mar 04 3 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT54 series MSA892 MSA893 10 3 3 10halfpage handbook, IF (mA) I R (μA) (1) (2) (3) 10 2 (1) 10 2 (2) 10 10 (1) 1 (2) (3) 1 10 1 0 0.4 0.8 VF (V) (3) 10 1 1.2 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.3 Fig.4 Forward current as a function of forward voltage; typical values. 20 30 VR (V) Reverse current as a function of reverse voltage; typical values. MSA891 15 handbook, halfpage Cd (pF) handbook, halfpage I F dI F 10 dt 10% t 5 Qr 90% IR 0 0 10 20 VR (V) tf MRC129 - 1 30 f = 1 MHz; Tamb = 25 °C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2002 Mar 04 Fig.6 Reverse recovery definitions. 4 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT54 series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2002 Mar 04 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT54 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Mar 04 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp7 Date of release: 2002 Mar 04 Document order number: 9397 750 09408