polyfet rf devices LP601 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 50 Watts Maximum Junction Temperature o 3.60 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 2.2 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 7.0 WATTS OUTPUT ) MAX 10 35 Load Mismatch Tolerance Drain to Gate Voltage 10;1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz % Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 0.10 mA, Vgs = 0V Ids = 0.10 A, Vgs = Vds 0.5 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 0.90 Ohm Vgs = 20V, Ids = 2.50 A Idsat Saturation Current 4.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 16.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 0.8 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 13.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 08/05/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP601 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LP 6 0 1 P out/G a in vs P in F re q= 1 .5 G H z , V ds= 2 8 V dc, I dq= .4 A L6B 1 DICE CAPACITANCE 100 13 13 8 12 P out 12 6 Gain 11 4 11 10 Coss CAPACITANCE IN PFS 10 10 Ciss 1 Crss 2 E fficiency @ 10 watts = 35% 10 0 9 0 0.2 0.4 0.6 P in in W a tts 0.8 0.1 0 1 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS L6B 1 DIE ID & GM Vs VG L6B 1 DIE IV 10.00 Id in amps; Gm in mhos 4 3.5 ID IN AMPS 3 2.5 2 1.5 1 Id 1.00 gM 0.10 0.5 0.01 0 0 2 vg=2v 4 Vg=4v 6 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 08/05/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com