PD - 9.1261D
IRF7601
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
A
A
D
S
1
8
S
2
7
D
S
3
6
D
4
5
D
G
VDSS = 20V
RDS(on) = 0.035Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Micro8
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ,TSTG
Max.
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
5.7
4.6
30
1.8
14
± 12
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
70
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7601
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
6.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
–––
–––
–––
–––
–––
–––
–––
–––
14
2.0
6.3
5.1
47
24
32
650
300
150
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.035
VGS = 4.5V, ID = 3.8A
Ω
0.050
VGS = 2.7V, ID = 1.9A
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 10V, ID = 1.9A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
22
ID = 3.8A
3.0
nC
VDS = 16V
9.5
VGS = 4.5V, See Fig. 6 and 9
–––
VDD = 10V
–––
ID = 3.8A
ns
–––
RG = 6.2Ω
–––
RD = 2.6Ω, See Fig. 10
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.8
–––
–––
30
–––
–––
–––
–––
51
69
1.2
77
100
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 3.8A, VGS = 0V
TJ = 25°C, IF = 3.8A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
IRF7601
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
10
1
20 µs P U LSE W IDTH
TJ = 25 °C
A
1.5 V
0.1
0.1
1
10
1.5V
1
20 µs P U LSE W IDTH
TJ = 15 0°C
A
0.1
10
0.1
1
V D S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on ) , D ra in -to -S o u rce O n R e s is ta n c e
(N o rm a lize d )
I D , D r ain- to-S ourc e C urre nt (A )
100
10
T J = 1 5 0 °C
T J = 2 5 °C
1
VD S = 1 0 V
2 0 µ s PU L SE W ID TH
0.1
1.5
2.0
2.5
3.0
10
V D S , Drain-to-Source V oltage (V)
3.5
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
ID = 3 .8A
1.5
1.0
0.5
0.0
-60
V G S = 4.5 V
-40
-20
0
20
40
60
80
100 120 140 160
T J , Junction Temperature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
A
IRF7601
V GS
C iss
C rs s
C os s
C , C a p a c ita n c e (p F )
1000
=
=
=
=
10
0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S, G a te -to -S o u rc e V o lta g e (V )
1200
C is s
800
C os s
600
400
C rs s
200
0
10
8
6
4
2
FO R TEST C IR C U IT
SEE F IGU R E 9
0
A
1
I D = 3.8 A
VD S = 16 V
100
0
4
V D S , D rain-to-S ource Voltage (V )
12
16
20
A
24
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
8
10
TJ = 1 50 °C
T J = 25° C
1
VG S = 0 V
0.1
0.4
0.8
1.2
1.6
2.0
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
10 0µ s
10
1m s
1
T A = 25 °C
T J = 15 0°C
S ing le Pulse
0.1
10 ms
A
1
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7601
VDS
QG
VGS
4.5V
QGS
QGD
RD
D.U.T.
RG
+
- VDD
VG
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ
90%
.2µF
12V
.3µF
+
V
- DS
D.U.T.
10%
VGS
VGS
3mA
td(on)
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7601
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* V GS = 5V for Logic Level Devices
Fig 12. For N-Channel HEXFETS
ISD
*
IRF7601
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
3
- B -
D D D D
D1 D1 D2 D2
A
M IL LI M E T E R S
M IN
MAX
M IN
MAX
. 0 36
.0 4 4
0 .9 1
1 . 11
A1
. 0 04
.0 0 8
0 .1 0
0 . 20
B
. 0 10
.0 1 4
0 .2 5
0 . 36
C
.0 0 5
.0 0 7
0 .1 3
0 .1 8
D
.1 1 6
.1 2 0
2 .9 5
3 .0 5
e
. 0 25 6 B A S IC
0 .6 5 B A S IC
e1
. 0 12 8 B A S IC
0 .3 3 B A S IC
E
. 1 16
.1 2 0
2. 9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5. 03
e
L
. 0 16
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
8 7 6 5
8 7
6 5
8 7 6 5
3
S IN G L E
H
E
- A -
0 .2 5 (.0 1 0 )
M
A
M
1 2 3
DUAL
4
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G2
e 1
R E C O M M E N D E D F O O T P R IN T
θ
1 . 04
( .0 4 1 )
8X
A
-C B
0 . 10 (. 00 4 )
A 1
8X
0. 08 (. 00 3 )
M
C
L
8X
A S
B
S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4. 2 4
5 .2 8
( .1 6 7 ) ( .2 08 )
N OT ES:
1 D IM E N SIO NIN G A ND TO LER AN C IN G P ER AN SI Y14.5M -1982.
2 C ON T RO LLIN G D IM EN SION : IN C H.
0 . 65 6 X
( .0 2 56 )
3 D IM E N SIO NS DO NO T IN CL UD E M O LD F LAS H.
Part Marking Information
Micro8
D A T E C O DE (YW W ) A
Y = L A ST D IG IT O F YE A R
W W = W EE K
E X AM P L E : T H IS IS A N IRF 7 5 0 1
451
750 1
P AR T N UM B ER
TOP
IRF7601
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ERM INAL NUM BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EED DIRECT IO N
NO T ES:
1 . O U TL IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
2 . C O N T R O LL IN G D IM E N S IO N : M IL L IM E TE R .
330.00
(12.992)
MAX .
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NT RO LLING DIME NSIO N : M ILLIMET ER.
2. OUT LINE CON FO RMS T O EIA -481 & EIA-541.
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97