i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and 25ns creating a zero wait state/latency, real-time memory solution. The high speed, 3.3V supply voltage and control lines,make the device ideal for all your real-time computer memory requirements. Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables Random Access Memory Array Fast Access Times: 12, 15, 20, and 25ns TTL Compatible I/O Fully Static, No Clocks Surface Mount Package 68 Lead PLCC, No. 99 JEDEC M0-47AE Small Footprint, 0.990 Sq. In. Multiple Ground Pins for Maximum Noise Immunity Single 3.3V (±10%) Supply Operation The device can be configured as a 512K x 32 and used to create a single chip external data /program memory array solution or via use of the individual chip enable lines, be reconfigured as a 1M x 16 or 2M x 8. The device provides a 50+% space savings when compared to four 512K x 8, 36 pin SOJs. In addition the AS8SLC512K32 has only a 24pF load on the Addr. lines vs. ~40pF for four plastic SOJs. DQ15 A14 A15 A16 W\ G\ NC NC Vcc NC E0\ E1\ E2\ E3\ A17 A18 PIN NAMES A0 - A18 E0\ - E3\ W\ G\ DQ0 - DQ31 Vcc Vss NC 61 62 63 64 65 66 67 68 1 2 3 4 5 6 7 8 9 DQ16 PIN CONFIGURATIONS AND BLOCK DIAGRAM DQ17 10 60 DQ14 DQ18 11 59 DQ13 DQ19 12 58 DQ12 Vss 13 57 Vss DQ20 14 56 DQ11 DQ21 15 55 DQ10 DQ22 16 54 DQ09 DQ23 17 53 DQ08 Vcc 18 52 Vcc DQ24 19 51 DQ07 DQ25 20 50 DQ06 DQ26 21 49 DQ05 W\ DQ27 22 48 DQ04 E0\ A0-A18 Address Inputs Chip Enables Write Enables Output Enable Common Data Input/Output Power (+5V ± 10%) Ground No Connection BYTE CONTROL TABLE Chip Byte Enable Control E0\ DQ0-7 E1\ DQ8-15 E2\ DQ16-23 E3\ DQ24-31 19 G\ 512K x 32 Memory Array 33 34 35 36 37 38 39 40 41 42 43 A0 Vcc A13 A12 A11 A10 A09 A08 A07 DQ00 DQ16-DQ23 A1 E3\ 32 DQ8-DQ15 A2 E2\ DQ01 31 DQ02 44 A3 45 26 30 25 DQ30 A4 DQ29 29 E1\ A5 DQ03 28 Vss 46 27 47 24 A6 23 DQ31 Vss DQ28 AS8SLC512K32PEC Rev. 0.0 07/08 DQ0-DQ7 DQ24-DQ31 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC ABSOLUTE MAXIMUM RATINGS* Voltage on any pin relative to Vss Operating Temperature tA (Ambient) Commercial Industrial Enhanced Mil-Temp Storage Temperature, Plastic Power Dissipation Output Current Junction Temperature, TJ -0.5V to 4.6V 0oC to +70oC -40oC to +85oC -40oC to +105oC -55oC to +125oC -55oC to +125oC 5.0 Watts 20 mA 175oC *Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those in di cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS Parameter Sym Min Typ VCC Supply Voltage 3.0 3.3 VSS Supply Voltage 0.0 0.0 Max 3.6 Units V 0.0 V Input High Voltage VIH 2.2 --- Vcc+0.3V V Input Low Voltage VIL -0.3 --- 0.8 V AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load Vss to 3.0V 5ns 1.5V Figure 1, 2 Note: For tEHQZ, tGHQZ and tWLQZ, CL=5pF 3.3V R L = 50 : VL = 1.5V Q =R = 50 : Q 30pf 5pf 333 : Figure 1 Figure 2 DC ELECTRICAL CHARACTERISTICS Parameter Sym Conditions Min Max 20/25 200 Units ns mA Operating Power Supply Current ICC1 W#=VIL, II/O=0mA, Min Cycle 12/15 220 Standby (TTL) Power Supply Current ICC2 E#VIH, VINVIL or VINVIH, f=0MHz 80 80 mA 15 15 mA Full Standby Power Supply Current CMOS ICC3 E#VCC-0.2V VINVCC-0.2V or VIN0.2V Input Leakage Current ILI VIN=0V to VCC ±5 µA Output Leakage Current ILO VI/O=0V to VCC ±5 µA Ouput High Voltage VOH IOH=-4.0mA Output Low Voltage VOL IOL=8.0mA TRUTH TABLE G# E# W# Mode Output H X Standby HIGH Z H L H Output Deselect ICC1 ICC1 L L H Read HIGH Z DOUT X L L Write DIN AS8SLC512K32PEC Rev. 0.0 07/08 V ICC3 ICC1 V 0.45 CAPACITANCE (f=1.0MHz, VIN=VCC or VSS) Sym Parameter Address Lines CI Data Lines CD/Q Write & Output Enable Line W#, G# Chip Enable Line E0#, E3# Power ICC2 X 2.4 Max 24 7 24 7 Unit pF pF pF pF Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC AC CHARACTERISTICS READ CYCLE Symbol JEDEC Alt. tAVAV tRC Parameter Read Cycle Time 12ns Min Max 12 15ns Min Max 15 20ns Min Max 20 25ns Min Max 25 Units ns Address Access Time tAVQV tAA 12 15 20 25 ns Chip Enable Access tELQV tACS 12 15 20 25 ns Chip Enable to Output in Low Z tELQX tCLZ Chip Disable to Output in High Z tEHQZ tCHZ 9 ns Output Hold from Address Change tAVQX tOH Output Enable to Output Valid tGLQV tOE Output Enable to Output in Low Z tGLQX tOLZ Output Enable to Output in High Z tGHQZ tOHZ 2 2 6 2 2 7 9 2 6 0 2 7 0 7 ns 2 9 0 6 2 ns 9 ns 9 ns 0 9 ns READ CYCLE 1 - W\ HIGH, G\, E\ LOW tAVAV A ADDRESS 1 ADDRESS 2 tAVQV tAVQX Q DATA 1 DATA 2 READ CYCLE 2 - W\ HIGH tAVAV A tAVQV E# tELQV tEHQZ tELQX G# tGLQV t GHQZ tGLQX Q AS8SLC512K32PEC Rev. 0.0 07/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC AC CHARACTERISTICS WRITE CYCLE Symbol Alt. JEDEC tAVAV tWC Parameter Write Cycle Time 12ns Min Max 12 15ns Min Max 15 20ns Min Max 20 25ns Min Max 25 Units ns tELWH tCW 8 10 11 12 ns tELEH tCW 8 10 11 12 ns tAVWL tAS 0 0 0 0 ns tAVEL tAS 0 0 0 0 ns tAVWH tAW 8 10 11 12 ns tAVEH tAW 8 10 11 12 ns tWLWH tWP 8 10 11 12 ns tELEH tWP 10 12 13 14 tWHAZ tWR 0 0 0 0 tEHAZ tWR 0 0 0 0 tWHDX tDH 0 0 0 0 tEHDZ tDH 0 0 0 0 Write to Output in High Z tWLQZ tWHZ 0 Data to Write Time tDVWH tDW 6 7 8 9 n tDVEH tDW 6 7 8 9 Output Active from End of Write tWHQX tWLZ 2 2 2 2 Chip Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Data Hold Time 6 0 7 0 8 0 ns ns 9 ns ns WRITE CYCLE 1 - W\ CONTROLLED tAVAV A E\ tELWH tWHAX tAVWH tWLWH W\ tAVWL tDVWH D DATA VALID tWHQX tWLQZ HIGH Z Q AS8SLC512K32PEC Rev. 0.0 07/08 tWHDX Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC WRITE CYCLE 2 - E\ CONTROLLED tAVAV A tAVEL tELEH E\ tAVEH tEHAX tWLEH W\ tDVEH D tEHDX DATA VALID HIGH Z Q PACKAGE DRAWING Package No. 99 68 Lead PLCC JEDEC MO-47AE 0.995 Max 0.956 Max 0.180 Max 0.995 0.956 Max Max 0.040 Max AS8SLC512K32PEC Rev. 0.0 07/08 0.020 0.015 0.930 0.890 0.050 BSC 0.115 Max Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC ORDERING INFORMATION Part Number AS8SLC512K32PEC-ES AS8SLC512K32PEC-12/IT AS8SLC512K32PEC-15/IT AS8SLC512K32PEC-20/IT AS8SLC512K32PEC-25/IT AS8SLC512K32PEC-12/ET AS8SLC512K32PEC-15/ET AS8SLC512K32PEC-20/ET AS8SLC512K32PEC-25/ET AS8SLC512K32PEC-12/XT AS8SLC512K32PEC-15/XT AS8SLC512K32PEC-20/XT AS8SLC512K32PEC-25/XT Access Speed Device Grade NA Engineering Sample 12ns INDUSTRIAL 15ns INDUSTRIAL 20ns INDUSTRIAL 25ns INDUSTRIAL 12ns ENHANCED 15ns ENHANCED 20ns ENHANCED 25ns ENHANCED 12ns MIL-TEMP 15ns MIL-TEMP 20ns MIL-TEMP 25ns MIL-TEMP A20 Vcc NC G\ W\ A16 A15 A14 DQ15 NC Vcc NC NC G\ W\ A16 A15 A14 DQ15 NC Vcc NC NC G\ W\ A16 A15 A14 DQ15 2 1 68 67 66 65 64 63 62 61 A19 E0\ E0\ E0\ 3 E1\ E1\ E1\ 4 E2\ E2\ E2\ 5 E3\ E3\ E3\ 6 A17 A17 NC 7 A18 A18 DQ16 DQ16 NC 4Mb-SRAM, 128K x 32: 5.0V = AS8S128K32PEC DQ16 16Mb-SRAM, 512K x 32: 5.0V = AS8S512K32PEC 3.3V = AS8SLC512K32PEC 8 64Mb-SRAM, 2M x 32: 3.3V = AS8SLC2M32PEC 9 FAMILY PIN MATRIX DQ17 DQ17 DQ17 10 60 DQ14 DQ14 DQ14 DQ18 DQ18 DQ18 11 59 DQ13 DQ13 DQ13 DQ19 DQ19 DQ19 12 58 DQ12 DQ12 DQ12 Vss Vss Vss 13 57 Vss Vss Vss DQ20 DQ20 DQ20 14 56 DQ11 DQ11 DQ11 DQ21 DQ21 DQ21 15 55 DQ10 DQ10 DQ10 DQ22 DQ22 DQ22 16 54 DQ09 DQ09 DQ09 DQ23 DQ23 DQ23 17 53 DQ08 DQ08 DQ08 Vcc Vcc Vcc 18 52 Vcc Vcc Vcc DQ24 DQ24 DQ24 19 51 DQ07 DQ07 DQ07 DQ25 DQ25 DQ25 20 50 DQ06 DQ06 DQ06 DQ26 DQ26 DQ26 21 49 DQ05 DQ05 DQ05 DQ27 DQ27 DQ27 22 48 DQ04 DQ04 DQ04 Vss Vss Vss 23 47 Vss Vss Vss DQ28 DQ28 DQ28 24 46 DQ03 DQ03 DQ03 DQ29 DQ29 DQ29 25 45 DQ02 DQ02 DQ02 DQ30 DQ30 DQ30 26 44 DQ01 DQ01 DQ01 AS8SLC512K32PEC Rev. 0.0 07/08 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 DQ31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A09 A08 A07 DQ00 DQ31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A09 A08 A07 DQ00 DQ31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A09 A08 A07 DQ00 AUSTIN SEMICONDUCTOR 68 - LD. PLCC [JEDEC MO-47AE] Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC DOCUMENT TITLE 16Mb, 512K x 32, SRAM, 3.3V, 0.990”sq. - 68 LD. PLCC, Multi-Chip Package [iPEM] REVISION HISTORY Rev # 0.0 AS8SLC512K32PEC Rev. 0.0 07/08 History Initial Release Release Date July 2008 Status Advance Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7