MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE FS10AS-3 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡10V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) ........................................................... 170mΩ ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ........... 100ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 150 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 10 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 40 10 A A IS ISM Source current Source current (Pulsed) 10 40 A A PD T ch Maximum power dissipation Channel temperature 35 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 0.26 Feb.1999 MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V Unit Min. Typ. Max. 150 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 122 170 mΩ ID = 5A, VDS = 10V — — 0.61 12 0.85 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 1250 175 — — pF pF — — 75 25 — — pF ns — — 30 60 — — ns ns ID = 5A, VGS = 10V VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs — 34 — ns — — 1.0 — 1.5 3.57 — 100 — V °C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 DRAIN CURRENT ID (A) 50 100 150 200 tw = 10ms 101 7 5 3 2 100ms 1ms 100 7 TC = 25°C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 8 6 4 5V 2 0.4 0.8 1.2 1.6 VGS = 20V 10V 7V 6V 5 TC = 25°C Pulse Test 0 102 7 5 3 2 CASE TEMPERATURE TC (°C) VGS = 20V 10V 7V 6V 10 0 MAXIMUM SAFE OPERATING AREA 3 2 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 TC = 25°C Pulse Test 4 5V 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 15A 1.6 1.2 10A 0.8 5A 0.4 0 0 4 8 12 80 40 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 20V 120 TRANSFER CHARACTERISTICS (TYPICAL) 12 8 4 103 7 5 4 3 2 VDS = 10V Pulse Test TC = 25°C 75°C 125°C 102 7 5 4 3 2 0 4 8 12 16 101 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 VGS = 10V DRAIN CURRENT ID (A) 16 0 160 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 CAPACITANCE Ciss, Coss, Crss (pF) 16 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test Coss Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 102 7 5 4 3 2 101 0 10 td(off) tf td(on) tr 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 80V 100V 12 8 4 0 10 20 30 40 8 4 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C 12 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 16 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) 20 Tch = 25°C ID = 10A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999