IRFH9310PbF HEXFET® Power MOSFET VDS -30 RDS(on) max V S S 6 mm mΩ nC RG (typical) 110 2.8 ID -21 A (@VGS = 10V) Qg (typical) (@TA = 25°C) D S D 5 mm 4.6 G D Ω D PQFN 5mm x 6mm Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Low RDSon (≤ 4.6mΩ) Industry-Standard PQFN Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRFH9310TRPBF PQFN 5mm x 6mm Lower Conduction Losses results in Multi-Vendor Compatibility ⇒ Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C TJ TSTG Max. -30 ± 20 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V (Silicon Limited) Continuous Drain Current, VGS @ -10V (Silicon Limited) Continuous Drain Current, VGS @ -10V (Package Limited) c Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range f f -21 -17 -107 - 86 -40 -170 3.1 2.0 0.025 -55 to + 150 Units V A W W/°C °C Notes through are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter -30 ––– ––– V ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient ––– ––– 0.020 3.7 ––– 4.6 V/°C Static Drain-to-Source On-Resistance mΩ Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -21A VGS = -4.5V, ID = -17A e e ––– 5.7 7.1 VGS(th) Gate Threshold Voltage -1.3 -1.9 -2.4 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– -1.0 -150 µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– -100 100 nA VGS = -20V VGS = 20V gfs Qg Forward Transconductance Total Gate Charge 39 ––– ––– 58 ––– ––– S nC 110 17 165 ––– nC Qg Qgs h Total Gate Charge h Gate-to-Source Charge ––– ––– Qgd Gate-to-Drain Charge ––– 28 ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 2.8 25 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 47 65 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 70 5250 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 1300 880 ––– ––– h h h VDS = VGS, ID = -100µA VDS = -10V, ID = -17A VDS = -15V,VGS = -4.5V,ID = - 17A VGS = -10V VDS = -15V ID = -17A Ω VDD = -15V, VGS = -4.5V ns ID = -1.0A e RG = 1.8Ω See Figs. 19a & 19b VGS = 0V pF VDS = -15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics c d Parameter Min. IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Typ. Typ. Max. Units ––– 170 mJ ––– -17 A Max. ––– ––– -3.1 ––– ––– -170 Units A c (Body Diode) Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. S e VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -3.1A, VGS = 0V trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -3.1A, VDD = -24V Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100/µs Thermal Resistance Parameter g RθJC Junction-to-Case RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) f f Typ. Max. ––– 1.6 ––– 40 ––– 35 e Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.1mH, RG = 50Ω, IAS = -17A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V 100 10 1 2.7V ≤60µs PULSE WIDTH BOTTOM 10 -2.7V ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.1 0.1 1 10 0.1 100 1000 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 10 T J = 25°C TJ = 150°C 1 VDS = -15V ≤60µs PULSE WIDTH 0.1 ID = -21A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd -V GS, Gate-to-Source Voltage (V) ID= -17A C oss = C ds + C gd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) 10.0 VDS= -24V VDS= -15V VDS = -6.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 25 Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com © 2014 International Rectifier 50 75 100 125 QG Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 3 VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback August 26, 2014 IRFH9310PbF 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 100 T J = 150°C T J = 25°C 10 1msec 10 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 10 100 -VDS, Drain-to-Source Voltage (V) -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.2 -V GS(th), Gate threshold Voltage (V) 25 20 -I D, Drain Current (A) 10msec DC 15 10 5 2.0 1.8 1.6 ID = -100µA 1.4 1.2 1.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) 12 ID = -21A 10 8 T J = 125°C 6 4 T J = 25°C 2 0 2 4 6 8 10 12 14 16 18 8 Vgs = -4.5V 6 4 Vgs = -10V 2 0 20 0 20 -V GS, Gate -to -Source Voltage (V) 60 100 120 50000 ID TOP -2.0A -3.1A BOTTOM -17A 40000 Power (W) 600 400 200 30000 20000 10000 0 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 0 25 50 75 100 125 150 Time (sec) Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * Fig 15. Typical Power vs. Time Driver Gate Drive + + * D.U.T. ISD Waveform Reverse Recovery Current + • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. - - * 80 Fig 13. Typical On-Resistance vs. Drain Current 800 RG 40 -I D, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) 10 ISD * VGS = 5V for Logic Level Devices Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr www.irf.com © 2014 International Rectifier 90% VDS Fig 19b. Switching Time Waveforms Submit Datasheet Feedback August 26, 2014 IRFH9310PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF Qualification Information† Qualification level Moisture Sensitivity Level Consumer †† (per JEDEC JESD47F ††† guidelines) MSL2 PQFN 5mm x 6mm ††† (per JEDEC J-STD-020D ) Yes RoHS Compliant Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Revision History Date 8/19/2014 Comments • Updated datasheet as per new IR Corporate Template • Updated data sheet with latest PQFN Tape and Reel Diagram. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014