Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION BTA216 series D, E and F QUICK REFERENCE DATA Passivated guaranteed commutation triacs in a plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. PINNING - TO220AB PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate SYMBOL PARAMETER MAX. MAX. UNIT 600D 600E 600F 600 800E 800F 800 V 16 140 16 140 A A BTA216BTA216BTA216Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current VDRM IT(RMS) ITSM PIN CONFIGURATION SYMBOL tab T2 tab T1 G 1 23 main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MAX. -600 6001 UNIT -800 800 V - 16 A - 140 150 98 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1999 1 Rev 1.100 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.2 1.7 - K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. IGT Gate trigger current2 IL Latching current VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- G- IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current TYP. BTA216- MAX. UNIT ...D ...E ...F - - 5 5 5 10 10 10 25 25 25 mA mA mA - - 15 25 25 20 30 30 25 40 40 mA mA mA VD = 12 V; IGT = 0.1 A - - 15 25 30 mA IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 1.2 0.7 0.4 1.5 1.5 - V V V - 0.1 0.5 mA MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS BTA216VDM = 67% VDRM(max); Tj = 110 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 110 ˚C; IT(RMS) = 16 A; dVcom/dt = 20v/µs; gate open circuit ...D ...E ...F 30 60 70 - - V/µs 1.8 3.5 4.5 - - A/ms dVD/dt Critical rate of rise of off-state voltage dIcom/dt Critical rate of change of commutating current dIcom/dt Critical rate of change of commutating current VDM = 400 V; Tj = 110 ˚C; IT(RMS) = 16 A; dVcom/dt = 0.1v/µs; gate open circuit 4.3 5.3 6.3 - - A/ms tgt Gate controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - - - 2 - µs 2 Device does not trigger in the T2-, G+ quadrant. October 1999 2 Rev 1.100 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.1. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1999 3 Rev 1.100 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA216 series D, E and F DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 4 Rev 1.100