ON MSB92WT1G Pnp silicon general purpose high voltage transistor Datasheet

MSB92WT1G,
MSB92AWT1G
PNP Silicon General
Purpose High Voltage
Transistor
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This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
COLLECTOR
3
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS (TA = 25C)
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
--300
Vdc
Collector-Emitter Voltage
V(BR)CEO
--300
Vdc
Emitter-Base Voltage
V(BR)EBO
--5.0
Vdc
IC
500
mAdc
ESD
MBM>16,000,
MM>2,000
V
Symbol
Max
Unit
PD
150
mW
Rating
Collector Current -- Continuous
Electrostatic Discharge
2
EMITTER
3
SC--70 (SOT--323)
CASE 419
STYLE 3
1
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
TJ
150
C
Storage Temperature Range
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
xx M G
G
1
xx
= Device Code
x= 2D or D2
M = Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MSB92WT1G
SC--70/
SOT--323
(Pb--Free)
3000/Tape & Reel
MSB92AWT1G
SC--70/
SOT--323
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
MSB92WT1/D
MSB92WT1G, MSB92AWT1G
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = --1.0 mAdc, IB = 0)
Characteristic
V(BR)CEO
--300
--
Vdc
Collector-Base Breakdown Voltage
(IC = --100 mAdc, IE = 0)
V(BR)CBO
--300
--
Vdc
Emitter-Base Breakdown Voltage
(IE = --100 mAdc, IE = 0)
V(BR)EBO
--5.0
--
Vdc
Collector-Base Cutoff Current
(VCB = --200 Vdc, IE = 0)
ICBO
--
--0.25
mA
Emitter--Base Cutoff Current
(VEB = --3.0 Vdc, IB = 0)
IEBO
--
--0.1
mA
hFE1
hFE1
hFE2
hFE3
25
120
40
25
-200
---
Collector-Emitter Saturation Voltage (Note 2)
(IC = --20 mAdc, IB = --2.0 mAdc)
VCE(sat)
--
--0.5
Vdc
Base--Emitter Saturation Voltage
(IC = --20 mAdc, IB = --2.0 mAdc)
VBE(sat)
--
--0.9
Vdc
fT
50
--
MHz
Ccb
--
6.0
pF
DC Current Gain (Note 2)
MSB92WT1: (VCE = --10 Vdc, IC =
MSB92AWT1: (VCE = --10 Vdc, IC =
(VCE = --10 Vdc, IC =
(VCE = --10 Vdc, IC =
--1.0 mAdc)
--1.0 mAdc)
--10 mAdc)
--30 mAdc)
--
SMALL SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product
(IC = --10 mAdc, VCE = --20 Vdc, f = 20 MHz)
Collector--Base Capacitance
(VCB = --20 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width  300 ms, D.C.  2%.
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2
MSB92WT1G, MSB92AWT1G
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125C
100
80
25C
60
40
--55C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
VCE(sat) @ --55C, IC/IB = 10
VBE(sat) @ 25C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125C, IC/IB = 10
0.6
VBE(sat) @ --55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
VBE(on) @ 125C, VCE = 10 V
VBE(on) @ --55C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 3. “ON” Voltages
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3
MSB92WT1G, MSB92AWT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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4
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Sales Representative
MSB92WT1/D
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