MSB92WT1G, MSB92AWT1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR 3 Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage V(BR)CBO --300 Vdc Collector-Emitter Voltage V(BR)CEO --300 Vdc Emitter-Base Voltage V(BR)EBO --5.0 Vdc IC 500 mAdc ESD MBM>16,000, MM>2,000 V Symbol Max Unit PD 150 mW Rating Collector Current -- Continuous Electrostatic Discharge 2 EMITTER 3 SC--70 (SOT--323) CASE 419 STYLE 3 1 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature TJ 150 C Storage Temperature Range Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. xx M G G 1 xx = Device Code x= 2D or D2 M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MSB92WT1G SC--70/ SOT--323 (Pb--Free) 3000/Tape & Reel MSB92AWT1G SC--70/ SOT--323 (Pb--Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 7 1 Publication Order Number: MSB92WT1/D MSB92WT1G, MSB92AWT1G ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = --1.0 mAdc, IB = 0) Characteristic V(BR)CEO --300 -- Vdc Collector-Base Breakdown Voltage (IC = --100 mAdc, IE = 0) V(BR)CBO --300 -- Vdc Emitter-Base Breakdown Voltage (IE = --100 mAdc, IE = 0) V(BR)EBO --5.0 -- Vdc Collector-Base Cutoff Current (VCB = --200 Vdc, IE = 0) ICBO -- --0.25 mA Emitter--Base Cutoff Current (VEB = --3.0 Vdc, IB = 0) IEBO -- --0.1 mA hFE1 hFE1 hFE2 hFE3 25 120 40 25 -200 --- Collector-Emitter Saturation Voltage (Note 2) (IC = --20 mAdc, IB = --2.0 mAdc) VCE(sat) -- --0.5 Vdc Base--Emitter Saturation Voltage (IC = --20 mAdc, IB = --2.0 mAdc) VBE(sat) -- --0.9 Vdc fT 50 -- MHz Ccb -- 6.0 pF DC Current Gain (Note 2) MSB92WT1: (VCE = --10 Vdc, IC = MSB92AWT1: (VCE = --10 Vdc, IC = (VCE = --10 Vdc, IC = (VCE = --10 Vdc, IC = --1.0 mAdc) --1.0 mAdc) --10 mAdc) --30 mAdc) -- SMALL SIGNAL CHARACTERISTICS Current -- Gain -- Bandwidth Product (IC = --10 mAdc, VCE = --20 Vdc, f = 20 MHz) Collector--Base Capacitance (VCB = --20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 ms, D.C. 2%. http://onsemi.com 2 MSB92WT1G, MSB92AWT1G 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 --55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ --55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ --55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ --55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. “ON” Voltages http://onsemi.com 3 MSB92WT1G, MSB92AWT1G PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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