Renesas BCR12PM-12LC-A8 Triac medium power use Datasheet

BCR12PM-12LC
Triac
Medium Power Use
REJ03G1261-0300
Rev.3.00
Dec 20, 2006
Features
•
•
•
•
• The product guaranteed maximum junction
temperature 150°C.
• Insulated Type
• Planar Passivation Type
IT (RMS) : 12 A
VDRM : 600 V
IFGTI, IRGTI, IRGTIII : 50 mA
Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Heater control, motor control
Maximum Ratings
Parameter
Note1
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Rev.3.00
Dec 20, 2006
page 1 of 7
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
700
V
V
BCR12PM-12LC
Symbol
Ratings
Unit
RMS on-state current
Parameter
IT (RMS)
12
A
Surge on-state current
ITSM
72
A
It
2
21.6
As
PGM
5
W
PG (AV)
VGM
0.5
10
W
V
Peak gate current
Junction temperature
IGM
Tj
2
– 40 to +150
A
°C
Storage temperature
Mass
Tstg
—
– 40 to +150
2.0
°C
g
Isolation voltage
Viso
1500
V
2
I t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 77°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
2
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
VTM
—
—
1.8
V
On-state voltage
Gate trigger voltage
Gate trigger current
Note2
Note2
Tc = 25°C, ITM = 20 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VFGTΙ
—
—
1.5
V
ΙΙ
ΙΙΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
1.5
1.5
V
V
Ι
ΙΙ
IFGTΙ
IRGTΙ
—
—
—
—
50
50
mA
mA
ΙΙΙ
IRGTΙΙΙ
—
—
50
mA
VGD
Rth (j-c)
0.2
—
—
—
—
4.3
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Note3
Junction to case
(dv/dt)c
10
—
—
V/µs
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Test conditions
Tj = 125°C, VDRM applied
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.3.00
Dec 20, 2006
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR12PM-12LC
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
10
7 Tj = 25°C
5
3
2
80
Surge On-State Current (A)
On-State Current (A)
2
101
7
5
3
2
0
10
7
5
3
2
10
–1
20
10
2 3
5 7 10
1
2 3
5 7 10
Gate Trigger Current vs.
Junction Temperature
VGM = 10 V
PGM = 5 W
1
VGT = 1.5 V
PG(AV)
= 0.5 W
IGM = 2 A
0
10
7
5
3
2
IFGT I
IRGT I
IRGT III
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
103
7
5
2
Typical Example
IRGTIII
3
2
102
7
5
3
2
IFGTI
IRGTI
101
–60 –40–20 0 20 40 60 80 100120 140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Dec 20, 2006
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
30
Gate Characteristics (I, II and III)
VGD = 0.2 V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
40
Conduction Time (Cycles at 60Hz)
10–1 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rev.3.00
50
On-State Voltage (V)
2
10
7
5
3
2
60
0 0
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
10
7
5
3
2
70
102 2 3 5 7103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60 Hz)
BCR12PM-12LC
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
2
4
On-State Power Dissipation (W)
18
16
360° Conduction
14 Resistive,
12 inductive loads
10
8
6
4
2
0
0
5
2
4
6
8
10
12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
2
4
6
8
160
Ambient Temperature (°C)
Case Temperature (°C)
3
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
0
0
140
All fins are black painted
aluminum and greased
120
120 × 120 × t2.3
100
100 × 100 × t2.3
80
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
0
0
10 12 14 16
Natural convection
2
4
6
8
10 12
14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
20
No Fins
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Rev.3.00
Maximum On-State Power Dissipation
3
Dec 20, 2006
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
BCR12PM-12LC
103
7
5
Latching Current (mA)
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120140 160
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
1
10
7 T2+, G+
5 Typical Example
3
2
T2–, G–
Typical Example
100
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100120 140160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
140
Typical Example
Tj = 150°C
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rev.3.00
Latching Current vs.
Junction Temperature
Dec 20, 2006
page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
1
10
7
5
I Quadrant
Minimum
Characteristics
Value
3
2 Typical Example
0
Tj = 125°C, IT = 4 A
τ = 500 µs, VD = 200 V
f = 3 Hz
10
7 0
10
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
BCR12PM-12LC
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj = 150°C)
7
5 Typical Example
Tj = 150°C
3 IT = 4 A
2 τ = 500 µs
VD = 200 V
1 f = 3 Hz
III Quadrant
10
7
5
3
2
0
I Quadrant
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Gate Trigger Characteristics Test Circuits
6Ω
A
6V
330 Ω
V
Test Procedure I
A
V
330 Ω
Test Procedure III
Rev.3.00
Dec 20, 2006
V
Test Procedure II
6Ω
6V
A
6V
page 6 of 7
Typical Example
IRGT III
IRGT I
3
2
IFGT I
102
7
5
3
2
101 0
10
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (µs)
Rate of Decay of On-State
Commutating Current (A/ms)
6Ω
103
7
5
330 Ω
BCR12PM-12LC
Package Dimensions
JEITA Package Code
SC-67
Package Name
TO-220F(2)
RENESAS Code
PRSS0003AA-B
Previous Code

MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Standard packing
Straight type
Vinyl sack
Lead form
Plastic Magazine (Tube)
Type name
Standard order
code example
BCR12PM-12LC
Type name – Lead forming code
BCR12PM-12LC-A8
Quantity
100
50
Standard order code
Note : Please confirm the specification about the shipping in detail.
Rev.3.00
Dec 20, 2006
page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0