MBR12020CT thru MBR12040CTR
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 120 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R)
Unit
VRRM
20
30
35
40
V
VRMS
14
21
25
28
V
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward
current (per pkg)
IF(AV)
TC = 125 °C
120
120
120
120
A
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
800
800
800
800
A
Maximum forward
voltage (per leg)
VF
IFM = 60 A, Tj = 25 °C
0.70
0.70
0.70
0.70
V
Reverse current at
rated DC blocking
voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
1
10
30
1
10
30
mA
0.80
0.80
0.80
0.80
°C/W
Parameter
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R)
Unit
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
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MBR12020CT thru MBR12040CTR
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MBR12020CT thru MBR12040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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