ON NTMFS5C410NLT Power mosfet 4 amps, 20 volt Datasheet

NTMFS5C410NLT
Power MOSFET
40 V, 0.9 mW, 315 A, Single N−Channel
Features
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NTMFS5C410NLTWF − Wettable Flank Option for Enhanced
Optical Inspection
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
0.9 mW @ 10 V
40 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
315
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Pulsed Drain Current
PD
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
223
Steady
State
TA = 100°C
TA = 25°C
G (4)
W
167
S (1,2,3)
A
48
PD
W
3.8
IDM
900
A
−55 to
+175
°C
IS
169
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 29 A)
EAS
706
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
May, 2015 − Rev. 0
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C410L
XXXXXX = (NTMFS5C410NLT) or
XXXXXX = 410LWF
XXXXXX = (NTMFS5C410NLTWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
MARKING
DIAGRAM
1.9
TJ, Tstg
TA = 25°C, tp = 10 ms
N−CHANNEL MOSFET
34
TA = 100°C
Operating Junction and Storage Temperature
D (5,6)
83
ID
315 A
1.3 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Publication Order Number:
NVMFS5C410NL/D
NTMFS5C410NLT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
21.2
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
−5.75
mV/°C
VGS = 10 V
ID = 50 A
0.71
0.9
VGS = 4.5 V
ID = 50 A
1.0
1.3
gFS
VDS = 15 V, ID = 50 A
190
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
8862
VGS = 0 V, f = 1 MHz, VDS = 25 V
CRSS
4156
pF
116
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
66
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
143
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.7
td(ON)
20
6.75
VGS = 4.5 V, VDS = 20 V; ID = 50 A
nC
21.4
22
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
tf
130
ns
66
177
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.73
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
79.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
39
ns
40.5
126
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C410NLT
TYPICAL CHARACTERISTICS
200
ID, DRAIN CURRENT (A)
140
120
2.8 V
100
80
60
40
140
120
100
80
TJ = 25°C
60
40
TJ = 125°C
20
0
0.5
1.0
1.5
2.0
0
3.0
2.5
0
1.0
1.5
TJ = −55°C
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0013
4.0
0.0012
0.0012
0.0011
TJ = 25°C
VGS = 4.5 V
0.0010
TJ = 25°C
ID = 50 A
0.0011
0.0009
0.0010
0.0008
0.0009
0.0007
0.0008
0.0006
VGS = 10 V
0.0006
0.0007
0.0005
3
4
5
6
7
8
9
VGS, GATE VOLTAGE (V)
10
0.0004
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1M
1.7
VGS = 10 V
ID = 40 A
TJ = 150°C
100k
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
160
3.0 V
160
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
180
10 V to 3.2 V
180
1.5
1.3
1.1
TJ = 125°C
10k
TJ = 85°C
1k
100
0.9
0.7
−50 −25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C410NLT
11k
CISS
C, CAPACITANCE (pF)
9k
8k
COSS
7k
VGS = 0 V
TJ = 25°C
f = 1 MHz
6k
5k
4k
3k
2k
CRSS
5
0
15
10
25
20
30
40
15
4
QGD
QGS
2
0
0
20
10
VDS = 20 V
TJ = 25°C
ID = 50 A
60
40
80
120
100
5
140
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
tf
tr
46
td(on)
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
41
36
31
26
TJ = 125°C
21
16
11
TJ = 150°C
TJ = 25°C
6
10
1
100
0.3
0.4
0.5
0.6
0.7
TJ = −55°C
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
0.1 ms
100
100
IDS (A)
1 ms
dc
TJ(initial) = 25°C
IPEAK (A)
1000
20
6
QG, TOTAL GATE CHARGE (nC)
100
1
25
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10,00
t, TIME (ns)
35
30
QT
IS, SOURCE CURRENT (A)
1k
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
10k
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
10 ms
TJ(initial) = 100°C
10
10
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
10
1
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NTMFS5C410NLT
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5C410NLT 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTMFS5C410NLTT1G
5C410L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C410NLTWFT1G
410LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NTMFS5C410NLTT3G
5C410L
DFN5
(Pb−Free)
5000 / Tape & Reel
NTMFS5C410NLTWFT3G
410LWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C410NLT
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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NTMFS5C410NLT/D
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