Order this document by MJH6284/D SEMICONDUCTOR TECHNICAL DATA " ! . . . designed for general–purpose amplifier and low–speed switching motor control applications. Motorola Preferred Devices • Similar to the Popular NPN 2N6284 and the PNP 2N6287 • Rugged RBSOA Characteristics • Monolithic Construction with Built–in Collector–Emitter Diode DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Max Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 20 40 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD Collector–Emitter Voltage Operating and Storage Junction Temperature Range Watts 160 1.28 W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 0.78 _C/W CASE 340D–02 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD , POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 100 — — 1.0 — — 0.5 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) VCEO(sus) Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc hFE 750 100 18,000 — — Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VCE(sat) — — 2.0 3.0 Vdc Base–Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) — 2.8 Vdc Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) — 4.0 Vdc fT 4.0 — MHz — — 400 600 300 — — mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJH6284 MJH6287 Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe SWITCHING CHARACTERISTICS Typical R i i Load Resistive L d Delay Time VCC = 30 Vdc, Vd IC = 10 Adc Ad IB1 = IB2 = 100 mA Dutyy Cycle y = 1.0% Rise Time Storage Time Fall Time S b l Symbol NPN PNP U i Unit td 0.1 0.1 µs tr 0.3 0.3 ts 1.0 1.0 tf 3.5 2.0 (1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA NPN MJH6284 VCC – 30 V PNP MJH6287 COLLECTOR COLLECTOR RC SCOPE TUT V2 APPROX +12 V RB BASE 51 0 V1 APPROX – 8.0 V ≈ 8.0 k D1 BASE ≈ 50 + 4.0 V 25 µs tr, tf, ≤ 10 ns DUTY CYCLE = 1.0% EMITTER EMITTER for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit 2 Figure 3. Darlington Schematic Motorola Bipolar Power Transistor Device Data r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 0.01 SINGLE PULSE 0.02 0.02 0.01 0.01 0.02 0.03 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC = 0.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 4. Thermal Response FBSOA, FORWARD BIAS SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMPS) 50 0.1 ms 20 0.5 ms 10 1.0 ms 5.0 ms 5.0 dc 2.0 1.0 TJ = 150°C 0.5 SECOND BREAKDOWN LIMITED 0.2 BONDING WIRE LIMITED 0.1 0.05 2.0 THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 20 50 5.0 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 5. MJH6284, MJH6287 FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 50 40 30 DUTY CYCLE = 10% 20 L = 200 µH IC/IB ≥ 100 TC = 25°C VBE(off) = 0 – 5.0 V RBE = 47 Ω 10 0 0 10 20 40 80 30 100 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _ C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 110 Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 NPN PNP 3000 5000 2000 3000 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V VCE = 3.0 V 1000 25°C 500 300 150 0.2 0.3 0.5 1.0 2000 25°C 1000 – 55°C 700 500 – 55°C 200 TJ = 150°C 2.0 3.0 5.0 7.0 10 300 0.2 20 0.3 IC, COLLECTOR CURRENT (AMPS) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 2.8 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 2.6 TJ = 25°C 2.4 2.2 2.0 1.8 IC = 15 A 1.6 1.4 IC = 10 A 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2.8 2.6 2.4 2.2 2.0 IC = 15 A 1.8 1.6 IC = 10 A 1.4 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 IB, BASE CURRENT (mA) 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 2.0 1.5 1.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 2.0 VBE(sat) @ IC/IB = 250 1.5 0.2 0.3 0.5 0.7 1.0 VBE(on) @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 TJ = 25°C VCE(sat) @ IC/IB = 250 2.0 3.0 5.0 7.0 10 20 30 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. “On” Voltages 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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