MMBT5551M3T5G NPN High Voltage Transistor The MMBT5551M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com Features COLLECTOR 3 • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 160 Vdc Collector −Base Voltage VCBO 180 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 60 mAdc Symbol Max Unit Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 mW mW/°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 1 2 EMITTER MARKING DIAGRAM 3 2 1 AH M SOT−723 CASE 631AA STYLE 1 AH M = Specific Device Code = Date Code ORDERING INFORMATION Device MMBT5551M3T5G Package Shipping† SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT5551M3/D MMBT5551M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 160 − 180 − 6.0 − − − 100 100 − 50 80 80 30 − 250 − − − 0.15 0.20 − − 1.0 1.0 − − 50 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) ICES 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 − Vdc Vdc nA MMBT5551M3T5G 500 300 h FE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V TJ = 125°C 200 25°C 100 -55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C 100 10-1 0.8 TJ = 125°C 10-2 IC = ICES 75°C REVERSE 10-3 FORWARD 25°C 10-4 10-5 0.4 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) μ VCE = 30 V VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.1 Figure 3. Collector Cut−Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages http://onsemi.com 3 50 100 MMBT5551M3T5G θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.5 2.0 TJ = - 55°C to +135°C 1.5 1.0 Vin 0 - 1.0 qVB for VBE(sat) tr, tf ≤ 10 ns DUTY CYCLE = 1.0% - 1.5 - 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 RB Vout 5.1 k 100 Vin 1N914 1000 IC/IB = 10 TJ = 25°C TJ = 25°C 500 20 200 t, TIME (ns) 300 10 Cibo 7.0 5.0 Cobo 3.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn−On Time 1.0 5000 tf @ VCC = 120 V 3000 2000 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) RC Figure 6. Switching Time Test Circuit 30 1.0 0.2 3.0 k Values Shown are for IC @ 10 mA Figure 5. Temperature Coefficients 100 70 50 VCC 30 V 100 0.25 mF 10 ms INPUT PULSE - 0.5 - 2.5 0.1 VBB -8.8 V 10.2 V qVC for VCE(sat) 0.5 500 300 ts @ VCC = 120 V 200 100 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. Turn−Off Time http://onsemi.com 4 100 200 50 100 200 MMBT5551M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 1 e 2 E HE L b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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