AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO6404 is Pb-free (meets ROHS & Sony 259 specifications). AO6404L is a Green Product ordering option. AO6404 and AO6404L are electrically identical. VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D TSOP-6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 2 W 1.28 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.6 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 45 70 33 Max 62.5 110 50 Units °C/W °C/W °C/W AO6404 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V 25 BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=8.5A Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 14.8 18 mΩ VGS=2.5V, ID=4A 18.8 24 mΩ VGS=1.8V, ID=3A 25.5 33 mΩ 1 V 2.9 A VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V VGS=4.5V, ID=5A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current Rg 1 V 0.75 20 Forward Transconductance Crss µA 17 VSD Output Capacitance 10 16 gFS Coss µA 13.4 TJ=125°C IS Units 10 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=16V, V GS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8.5A mΩ 36 0.73 S 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=10V, R L=1.2Ω, RGEN=3Ω 49 ns 10.8 ns IF=8.5A, dI/dt=100A/µs 22 IF=8.5A, dI/dt=100A/µs 9.8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V 2V VDS=5V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 0 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 RDS(ON) (mΩ) Normalized On-Resistance VGS=1.8V 25 VGS=2.5V 20 VGS=4.5V 15 VGS=10V 10 5 VGS=4.5V ID=5A VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 0.8 0 5 10 15 20 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 40 35 1 30 125°C ID=5A 0.1 25 125°C 20 IS (A) RDS(ON) (mΩ) 2.5 15 0.01 25°C 0.001 25°C 10 0.0001 5 0.00001 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 0 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1ms 10µs 10ms 1.0 1s 0.1s 0 0.001 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 20 DC 0.1 10 TJ(Max)=150°C TA=25°C 10 TJ(Max)=150°C TA=25°C 0.1 20 30 Power (W) ID (Amps) 40 RDS(ON) limited 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000