LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO V EBO – 150 – 160 – 5.0 Vdc Vdc Vdc IC – 500 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R 556 °C/W PD 300 mW R θJA T J , Tstg 2.4 417 –55to+150 mW/°C °C/W °C θJA DEVICE MARKING MMBT5401LT1=2L ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Ma x – 150 — – 160 — -5.0 — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Emitter-BAse Breakdown Voltage (I E= –10µAdc,I C=0) Collector Cutoff Current (V CB = –120 Vdc, IE= 0) (V CB = –120 Vdc, IE= 0, T A=100 °C) V (BR)CEO Vdc V (BR)CBO Vdc V(BR)EBO Vdc I CES — – 50 nAdc — – 50 µAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M19–1/4 LESHAN RADIO COMPANY, LTD. MMBT5401LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 60 50 –– 240 –– –– –– – 0.2 – 0.5 Unit ON CHARACTERISTICS (2) DC Current Gain (IC = –1.0mAdc, V CE = –5.0 Vdc) (IC = –10 mAdc, V CE = –5.0 Vdc) (IC = –50 mAdc, V CE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage hFE –– VCE(sat) Vdc VBE(sat) Vdc (IC = –10 mAdc, I B = –1.0 mAdc) –– – 1.0 (IC = –50 mAdc, I B = –5.0 mAdc) –– – 1.0 100 300 –– 6.0 40 200 –– 8.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz) Output Capacitance (VCB= –10 Vdc, I E = 0, f = 1.0 MHz) Small–Signal Current Gain (IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz) Noise Figure (IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) f MHz T C obo pF h fe — NF dB M19–2/4 LESHAN RADIO COMPANY, LTD. MMBT5401LT1 200 150 h FE, CURRENT GAIN T J=125°C 100 25°C 70 50 –55°C V V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 CE CE = –1.0 V = –5.0 V 20 30 50 100 I C , COLLECTOR CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 I 0.5 C =1.0mA 100 mA 30 mA 10mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 3 I C , COLLECTOR CURRENT (µA) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain V CE = 30 V 10 2 I C= I CES 10 1 T J = 125°C 10 0 75°C 10 -1 10 -2 REVERSE 25°C 10 -3 - 0.3 - 0.2 - 0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V BE , BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut–Off Region M19–3/4 LESHAN RADIO COMPANY, LTD. θ V , TEMPERATURE COEFFICIENT (mV/° C) MMBT5401LT1 1.0 T J =25°C 0.8 0.7 V 0.6 BE(sat) @ I C /I B =10 0.5 0.4 0.3 0.2 V CE(sat) @ I C /I B =10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 T J = –55°C to 135°C 2.0 1.5 1.0 0.5 θ VC for V CE(sat) 0 - 0.5 - 1.0 - 1.5 θ VB for V BE(sat) - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 4. “On” Voltages Figure 5. Temperature Coefficients V V BB 100 CC –30 V +8.8 V 10.2V V 10 3.0 k 100 R C in 0.25µF 10µs INPUT PULSE t r , t f < 10 ns DUTY CYCLE = 1.0% V R V B 5.1 k 100 in 1N914 Values Shown are for I C @ 10 mA out T J =25°C 70 50 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.9 2.5 30 C 20 ibo 10 7.0 C 5.0 obo 3.0 2.0 1.0 0.2 0.3 Figure 6. Switching Time Test Circuit 0.5 1.0 2.0 3.0 5.0 10 20 V R , REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 1000 700 500 100 I C /I B =10 t r @V T J= 25°C 70 50 = 120V t r @V CC 30 = 30V 20 200 t, TIME (ns) t, TIME (ns) 300 CC 100 70 50 I C /I B= 10 t f @V CC= 120V T J= 25°C t f@ V 10 CC = 30V t s @V 7.0 CC = 120V 5.0 3.0 30 t d @ V BE(off)= 1.0V V CC = 120V 20 2.0 1.0 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) Figure 8. Turn–On Time 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time M19–4/4