PHILIPS BYV118F-40 Rectifier diodes schottky barrier Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
BYV118F, BYV118X series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated package
QUICK REFERENCE DATA
VR = 35 V/ 40 V/ 45 V
a2
3
a1
1
IO(AV) = 10 A
VF ≤ 0.6 V
k 2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
PIN
SOT186
SOT186A
DESCRIPTION
case
case
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
1 2 3
1 2 3
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BYV118FBYV118X-
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
May 1998
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
35
35
35
40
40
40
45
45
45
V
-
35
40
45
V
Ths ≤ 97 ˚C
-
35
40
45
V
square wave; δ = 0.5;
Ths ≤ 107 ˚C
-
10
A
square wave; δ = 0.5;
Ths ≤ 107 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
10
A
-
100
110
A
A
-
1
A
-
150
˚C
- 65
175
˚C
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Peak isolation voltage from
all terminals to external
heatsink
SOT186 package; R.H. ≤ 65%; clean and
dustfree
MIN.
Visol
Cisol
TYP. MAX. UNIT
-
-
1500
V
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
-
-
2500
V
Capacitance from pin 2 to
external heatsink
-
10
-
pF
f = 1 MHz
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-hs
Thermal resistance junction
to heatsink
Rth j-a
Thermal resistance junction
to ambient
per diode
both diodes
(with heatsink compound)
in free air
TYP. MAX. UNIT
-
-
6.5
5.5
K/W
K/W
-
55
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 5 A; Tj = 125˚C
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
May 1998
MIN.
2
-
TYP. MAX. UNIT
0.52
0.72
0.06
6
155
0.6
0.87
0.5
15
-
V
V
mA
mA
pF
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
5
BYV118F, BYV118X series
Ths(max) / C
117.5
Forward dissipation, PF (W) PBYR1045CTD
Vo = 0.43 V
Rs = 0.034 Ohms
124
0.5
0.2
125 C
10
100 C
130.5
0.1
1
2
tp
I
D=
tp
T
Tj = 25 C
t
T
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
0.01
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
5
Forward dissipation, PF (W) PBYR1045CTD
Ths(max) / C
Vo = 0.43 V
Rs = 0.034 Ohms
a = 1.57
4
2.2
0
25
Reverse voltage, VR (V)
50
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
117.5
PBYR645CT
1000
124
1.9
2.8
3
50 C
0.1
143.5
0
75 C
137
1
0
PBYR645CT
Reverse current, IR (mA)
D = 1.0
4
3
100
130.5
4
100
2
137
1
143.5
0
0
1
10
150
5
2
3
4
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
20
10
VR / V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
BYV118
Forward current, IF (A)
1
10
Transient thermal impedance, Zth j-hs (K/W)
Tj = 25 C
Tj = 125 C
15
1
typ
10
max
0.1
PD
5
tp
D=
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
May 1998
1us
10us
100us
tp
T
t
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYV118X
Fig.6. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
2
3
0.9
0.7
M
0.55 max
2.54
1.3
5.08
top view
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1998
6
Rev 1.100
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