FEPE16xT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES TO-220AB 1 2 • • • • • • • 3 FEPE16xT PIN 1 PIN 2 PIN 3 CASE Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency High forward surge capability Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. PRIMARY CHARACTERISTICS IF(AV) 2 x 8.0 A VRRM 50 V to 600 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C Package TO-220AB Diode variations Common cathode MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE SYMBOL 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT UNIT PARAMETER Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 Maximum average forward rectified current at TC = 100 °C IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 16 200 125 TJ, TSTG Operating storage and temperature range V A A -55 to +150 °C ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current per diode at rated DC blocking voltage TEST CONDITIONS FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE SYMBOL 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT UNIT VF (1) 8.0 A TC = 25 °C TC = 100 °C 0.95 1.30 10 IR Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ 1.50 μA 500 35 50 85 V ns 60 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 23-Feb-16 Document Number: 87919 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEPE16xT www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance from junction to case per diode FEPE FEPE FEPE FEPE FEPE FEPE FEPE FEPE UNIT 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT 2.2 RJC °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB FEPE16JT-E3/45 1.85 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Average Forward Current (A) Resistive or Inductive Load 16 12 8 4 Instantaneous Forward Current (A) 20 0 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0 50 100 150 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 1.8 2.0 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 TC = 100 °C 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 Instantaneous Reverse Leakage Current (μA) 300 Peak Forward Surge Current (A) TJ = 125 °C TJ = 125 °C 50 V to 400 V 500 V to 600 V 10 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 23-Feb-16 Document Number: 87919 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEPE16xT www.vishay.com Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 50 V to 400 V 500 V to 600 V 100 10 0.1 10 1 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.185 (4.70) 0.175 (4.44) 0.415 (10.54) MAX. 0.159 (4.04) DIA. 0.143 (3.64) DIA. 0.113 (2.87) 0.103 (2.62) 0.055 (1.39) 0.045 (1.14) 0.260 (6.6) 0.236 (6.0) 0.603 (15.32) 0.573 (14.55) 1 0.060 (1.50) 0.047 (1.20) 2 3 0.160 (4.06) 0.140 (3.56) 0.560 (14.22) 0.530 (13.46) 0.040 (0.84) 0.024 (0.62) 0.10 (2.54) PIN 1 PIN 3 0.10 (2.54) PIN 2 0.022 (0.56) 0.014 (0.36) Revision: 23-Feb-16 Document Number: 87919 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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