LL914...LL4454 Silicon Epitaxial Planar Switching Diode for general purpose and switching. LL-34 Peak Reverse Voltage VRM (V) Aver. Rectified Current IF(AV) Max. (mA) LL914 100 LL4149 Power Dissip. at 25 oC Junction Temperature Ptot (mW) Tj (oC) VF Max. (V) at IF (mA) IR Max. (nA) at VR (V) trr Max.(ns) 75 500 200 1 10 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 100 150 500 200 1 10 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA LL4151 75 150 500 200 1 50 50 50 2 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA LL4152 40 150 400 175 0.55 0.1 50 30 2 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA LL4153 75 150 400 175 0.55 0.1 50 50 2 IF = 10 mA, VR = 6V, RL = 100 Ω, to IR = 1 mA LL4154 35 150 500 200 1 30 100 25 2 IF = 10 mA, VR = 6V, RL = 100 Ω, to IR = 1 mA LL4447 100 150 500 200 1 20 25 20 4 IF = 10 mA, VR = 6V, RL = 100 Ω, to IR = 1 mA LL4449 100 150 500 200 1 30 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA LL4450 40 150 400 175 0.54 0.5 50 30 4 IF = IR = 10 mA, to IR = 1 mA LL4451 40 150 400 175 0.5 0.1 50 30 10 IF = IR = 10 mA, to IR = 1 mA LL4453 30 150 400 175 0.55 0.01 50 20 - - LL4454 75 150 400 175 1 10 100 50 4 IF = IR = 10 mA, to IR = 1 mA Type Forward Voltage Reverse Current Reverse Recovery Time Conditions