Freescale MRFE6S9160HR3 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9160H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA. Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9160HR3
MRFE6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9160HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +66
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
Symbol
RθJC
Value (2,3)
0.31
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 525 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGG(Q)
2.1
3.17
4.22
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.175
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
80.2
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
29
31
—
%
ACPR
—
- 46.8
- 45
dBc
IRL
—
- 17
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 19/18 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched on input.
(continued)
MRFE6S9160HR3 MRFE6S9160HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 35 MHz Bandwidth @ Pout = 35 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.008
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
3
B2
VBIAS
B1
VSUPPLY
R2
+
+
C20 C21
R1
C16 C17
C18
C7
L1
RF
INPUT Z1
C22 C23 C24
L2
C19
Z9
C9
Z10
Z11 Z12
Z13
Z14
Z15
Z16 Z17
Z18
C5
Z2
Z3
Z4
Z5
Z6
Z7
C2
Z8
C8
C1
C3
C6
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z19
RF
OUTPUT
C10
C11
C12
C13
C15
C14
DUT
0.426″ x 0.080″ Microstrip
0.813″ x 0.080″ Microstrip
0.471″ x 0.080″ Microstrip
0.319″ x 0.220″ Microstrip
0.171″ x 0.220″ Microstrip
0.200″ x 0.425″ x 0.630″ Taper
0.742″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.128″ x 0.630″ Microstrip
0.134″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 1. MRFE6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Small
2743019447
Fair Rite
C1, C2, C19
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C3, C11
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C7, C8
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C9, C10
4.3 pF Chip Capacitors
ATC100B4R3JT500XT
ATC
C12
8.2 pF Chip Capacitor
ATC100B8R2JT500XT
ATC
C13, C14
3.9 pF Chip Capacitors
ATC100B3R9JT500XT
ATC
C15
0.6- 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C16
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
C17
1 μF, 50 V Tantalum Capacitor
T491C105K0J0AT
Kemet
C18
20K pF Chip Capacitor
CDR35BP203AKYS
Kemet
C20
180 pF Chip Capacitor
ATC100B181JT500XT
ATC
C21, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C24
470 μF, 63 V Electrolytic Capacitor
ESME630ELL471MK25S
United Chemi - Con
L1, L2
10 nH Inductors
0603HC
Coilcraft
R1
180 Ω, 1/4 W Chip Resistor
CRCW12061800FKEA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRFE6S9160HR3 MRFE6S9160HSR3
4
RF Device Data
Freescale Semiconductor
C24
C16
B1
C18
C17
B2
900 MHz
Rev. 2
C21
R2
C22 C23
R1
C19
C20
L1
C7 C9
C5
L2
C1
C3
C4
C6
CUT OUT AREA
C14
C12 C13
C15
C2
C8 C10 C11
Figure 2. MRFE6S9160HR3(SR3) Test Circuit Component Layout
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
21
27
VDD = 28 Vdc, Pout = 35 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
Gps
18
17
−40
−45
ACPR
16
−50
IRL
−55
15
14
−60
ALT1
13
820
840
860
880
900
920
940
960
−65
980
0
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
19
30
ACPR (dBc), ALT1 (dBc)
20
ηD, DRAIN
EFFICIENCY (%)
33
ηD
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 35 Watts Avg.
45
40
Gps, POWER GAIN (dB)
18
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
17
16
Gps
35
−30
ACPR
15
−40
IRL
14
−50
13 ALT1
−60
12
820
840
860
880
900
920
940
960
−70
980
0
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
19
ACPR (dBc), ALT1 (dBc)
ηD
ηD, DRAIN
EFFICIENCY (%)
50
20
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 70 Watts Avg.
22
IDQ = 1800 mA
Gps, POWER GAIN (dB)
21
20
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
1500 mA
1200 mA
900 mA
19
18
600 mA
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 1 kHz Tone Spacing
−20
−30
IDQ = 600 mA
−40
900 mA
−50
1200 mA
1800 mA
1500 mA
−60
−70
16
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9160HR3 MRFE6S9160HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 1 kHz Tone Spacing
−20
−30
−40
3rd Order
−50
−60
5th Order
−70
7th Order
−80
10
1
100
0
VDD = 28 Vdc, Pout = 140 W (PEP)
IDQ = 1200 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
−30
IM3−U
−40 IM3−L
IM5−U
−50 IM5−L
IM7−L
IM7−U
−60
−70
400
10
1
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
100
Ideal
P6dB = 53.13 dBm (205.59 W)
Pout, OUTPUT POWER (dBm)
58
P3dB = 52.86 dBm (193.2 W)
56
P1dB = 52.1 dBm (162.2 W)
54
Actual
52
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 880 MHz
50
48
28
29
30
31
32
33
34
36
35
37
Pin, INPUT POWER (dBm)
80
−20
60
VDD = 28 Vdc, IDQ = 1200 mA
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
50
ACPR
70
TC = −30_C
−30
85_C
25_C
25_C
40
−40
85_C −50
−60
−30_C
30
−70
ALT1
20
−30_C −80
Gps
10
85_C
25_C
ηD
0
1
10
100
−90
−100
200
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
24
23
TC = −30_C
25_C 60
85_C 50
21
20
25_C
40
19
85_C
30
18
VDD = 28 Vdc
IDQ = 1200 mA
f = 880 MHz
ηD
17
20
10
19
18
IDQ = 1200 mA
f = 880 MHz
17
VDD = 24 V
10
0
400
16
1
20
Gps, POWER GAIN (dB)
Gps
ηD, DRAIN EFFICIENCY (%)
70
−30_C
22
Gps, POWER GAIN (dB)
21
80
100
28 V
32 V
16
0
100
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
300
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9160HR3 MRFE6S9160HSR3
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
.... .
...................
.........
..........
.....
.........
. .............
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
..........
...
......
........
......
.
.
.
..........
.
.
.
.
.
.
.
.
.
............. .
.........
.
.
.
.
..
.
.
..
.
.
.
.
.
..
....
.
−ACPR in 30 kHz
+ACPR in 30 kHz .................
........
.. ............
.
.
............
...
................
.
.
.
.
.
.
Integrated BW
Integrated BW
..
.....
.............
........
......
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
9
f = 910 MHz
Zload
f = 850 MHz
Zo = 2 Ω
f = 910 MHz
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.61 - j1.27
1.20 + j0.03
865
0.66 - j1.15
1.26 + j0.15
880
0.64 - j1.05
1.31 + j0.22
895
0.55 - j0.90
1.32 + j0.28
910
0.48 - j0.74
1.26 + j0.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9160HR3 MRFE6S9160HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRFE6S9160HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRFE6S9160HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Table 4, On Characteristics, tightened VDS(on) Min value from 0.05 to 0.1 to match production test values,
p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjust scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
MRFE6S9160HR3 MRFE6S9160HSR3
12
RF Device Data
Freescale Semiconductor
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Document
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DeviceNumber:
Data MRFE6S9160H
Rev. 1, 12/2008
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Semiconductor
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