INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation @TC=25℃ 48 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 3.1 ℃/W 110 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=15A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=16V; VGS= 0V VSD Diode forward voltage Is=12A, VGS = 0V isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP MAX 20 1.65 UNIT V 2.55 V 8.4 mΩ ±0.1 μA 1 μA 1.0 V isc & iscsemi is registered trademark