Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package, thus realizes higher efficiency in device mounting on the PCB. unit : mm 2122 [FC21] 5 1.9 0.95 0.95 4 3 0.16 0.6 Features 0.8 1.1 1 2 0.4 2.9 0.6 1.6 2.8 0 to 0.1 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CP5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current VDSX VGDS 40 V --40 V mA IG ID 10 Drain Current 75 mA Allowable Power Dissipation PD 400 mW Collector-to-Base Voltage VCBO 55 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 [TR] Collector Current V IC 150 ICP IB 300 mA Base Current 30 mA Collector Dissipation PC 200 mW Total Dissipation PT 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current(Pulse) mA [Common Ratings] Marking : 1C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81001 TS IM TA-1526 No.7021-1/5 FC21 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS Gate Cutoff Current IG=--10µA, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=100µA --40 V Cutoff Voltage IGSS VGS(off) Drain Current IDSS VDS=10V, VGS=0 Forward Transfer Admittance yfs Ciss VDS=10V, VGS=0, f=1kHz Input Capacitance VDS=10V, VGS=0, f=1MHz 11 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 2.5 pF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB Noise Figure NF --1.0 --2.0 --3.0 --5.0 V 75* mA 40* 22 nA 30 mS [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA 135 VCE=6V, IC=10mA 100 Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Cob VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA 3 0.1 0.8 Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=10µA, IE=0 IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 MHz pF V V 0.5 1.0 55 V 50 V 6 V Electrical Connection * : The FC21 is classified by IDSS as follows : (unit : mA) J µA µA 600 fT Rank 0.1 0.1 K B L E/D S IDSS 40 to 52 48 to 63 57 to 75 The specifications shown above are for each individual FET or transistor. C ID -- VDS [FET] VGS=0 --0.5V 40 --1.0V --1.5V 20 [FET] 60 VGS=0 --0.5V 40 --1.0V --1.5V 20 --2.0V --2.0V --2.5V --3.0V 0 0 ID -- VDS 80 Drain Current, ID -- mA 60 --3.0V --2.5V 0 2 3 4 5 Drain-to-Source Voltage, VDS -- V ITR01960 ID -- VGS [FET] 0 4 8 12 16 20 Drain-to-Source Voltage, VDS -- V ITR01961 ID -- VGS 100 [FET] 80 A 40 m 25 °C 5° C 40 °C 75 --2 A m 55 SS =7 5m 40 60 Ta = A 60 Drain Current, ID -- mA 80 20 20 0 --6 --5 --4 --3 --2 Gate-to-Source Voltage, VGS -- V --1 0 ITR01963 100 VDS=10V IDSS=60mA VDS=10V --6 --5 --4 --3 --2 Gate-to-Source Voltage, VGS -- V --1 0 0 ITR01964 No.7021-2/5 Drain Current, ID -- mA 1 ID Drain Current, ID -- mA 80 G FC21 VGS(off) -- IDSS 6 6 4 3 2 --1.0 4 5 7 3 2 yfs -- IDSS 5 Forward Transfer Admittance, yfs -- mS 2 yfs1(I =10m A) D 10 7 5 7 100 ITR01967 Drain Current, IDSS -- mA Ciss -- VDS 7 2 10 7 5 3 2 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V PD -- Ta 500 5 3 3 5 ITR01981 A mA 55m 3 5 =40 I DSS 2 A 75m 10 7 5 3 3 5 7 2 10 7 2 100 ITR01968 Crss -- VDS 2 3 [FET] VDS=10V f=1kHz Drain Current, ID -- mA Reverse Transfer Capacitance, Crss -- pF 5 100 ITR01966 yfs -- ID [FET] VGS=0 f=1MHz 7 7 2 2 5 4 5 Drain Current, IDSS -- mA 100 =0) yfs2(V GS 3 4 [FET] VDS=10V f=1kHz 3 3 100 ITR01965 Drain Current, IDSS -- mA Forward Transfer Admittance, yfs -- mS 4 10 3 Input Capacitance, Ciss -- pF [FET] ID=10mA VGS=0 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Cutoff Voltage, VGS(off) -- V 5 Allowable Power Dissipation, PD -- mW RDS(on) -- IDSS [FET] VDS=10V IDSS=100µA [FET] VGS=0 f=1MHz 10 7 5 3 2 1.0 7 5 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 ITR01982 [FET] 400 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR01983 No.7021-3/5 FC21 IC -- VCE [TR] 200 30µA 25µA 20µA 8 15µA 4 10µA 80 40 0 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V 0 Gain-Bandwidth Product, f T -- MHz 7 Ta=75°C 5 --25°C 25°C 3 2 100 7 5 0.1 2 3 5 2 1.0 3 5 2 10 3 5 Collector Current, IC -- mA [TR] 5 3 2 1.0 7 5 1.2 IT03593 [TR] VCE=6V 5 3 2 100 7 5 3 2 3 5 7 10 2 3 5 7 100 2 3 IT03595 VCE(sat) -- IC 3 [TR] IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 1.0 Collector Current, IC -- mA f=1MHz 10 0.8 7 2 1.0 100 2 3 IT03594 Cob -- VCB 2 0.6 f T -- IC 1000 VCE=6V 1000 0.4 Base-to-Emitter Voltage, VBE -- V [TR] 2 0.2 IT03592 hFE -- IC 3 DC Current Gain, hFE 120 IB=0 0 Output Capacitance, Cob -- pF 160 25°C --25°C 35µA 12 Ta=75° C 40µA 5µA 1.0 7 5 3 2 0.1 7 5 3 2 3 2 5 7 1.0 2 Collector-to-Base Voltage, VCB -- V 7 100 IT03596 PC -- Ta [TR] 250 Collector Dissipation, PC -- W [TR] VCE=6V 50µA 45µA 16 IC -- VBE 240 Collector Current, IC -- mA Collector Current, IC -- mA 20 3 5 7 2 10 3 5 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 IT03597 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR10349 No.7021-4/5 FC21 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2001. Specifications and information herein are subject to change without notice. PS No.7021-5/5