Renesas ISL6255 Highly integrated battery charger with automatic power source selector for notebook computer Datasheet

DATASHEET
ISL6255, ISL6255A
FN9203
Rev 2.00
May 23, 2006
Highly Integrated Battery Charger with Automatic Power Source Selector for
Notebook Computers
The ISL6255, ISL6255A is a highly integrated battery charger
controller for Li-Ion/Li-Ion polymer batteries. High Efficiency is
achieved by a synchronous buck topology and the use of a
MOSFET, instead of a diode, for selecting power from the
adapter or battery. The low side MOSFET emulates a diode at
light loads to improve the light load efficiency and prevent
system bus boosting.
The constant output voltage can be selected for 2, 3 and 4
series Li-Ion cells with 0.5% accuracy over temperature. It can
also be programmed between 4.2V+5%/cell and 4.2V-5%/cell
to optimize battery capacity. When supplying the load and
battery charger simultaneously, the input current limit for the
AC adapter is programmable to within 3% accuracy to avoid
overloading the AC adapter, and to allow the system to make
efficient use of available adapter power for charging. It also
has a wide range of programmable charging current. The
ISL6255, ISL6255A provides outputs that are used to monitor
the current drawn from the AC adapter, and monitor for the
presence of an AC adapter. The ISL6255, ISL6255A
automatically transitions from regulating current mode to
regulating voltage mode.
ISL6255, ISL6255A has a feature for automatic power source
selection by switching to the battery when the AC adapter is
removed or switching to the AC adapter when the AC adapter
is available. It also provides a DC adapter monitor to support
aircraft power applications with the option of no battery
charging.
Ordering Information
Features
• ±0.5% Charge Voltage Accuracy (-10°C to 100°C)
• ±3% Accurate Input Current Limit
• ±3% Accurate Battery Charge Current Limit
• ±25% Accurate Battery Trickle Charge Current Limit
(ISL6255A)
• Programmable Charge Current Limit, Adapter Current
Limit and Charge Voltage
• Fixed 300kHz PWM Synchronous Buck Controller with
Diode Emulation at Light Load
• Output for Current Drawn from AC Adapter
• AC Adapter Present Indicator
• Fast Input Current Limit Response
• Input Voltage Range 7V to 25V
• Support 2, 3 and 4 Cells Battery Pack
• Up to 17.64V Battery-Voltage Set Point
• Control Adapter Power Source Select MOSFET
• Thermal Shutdown
• Aircraft Power Capable
• DC Adapter Present Indicator
• Battery Discharge MOSFET Control
• Less than 10µA Battery Leakage Current
• Support Pulse Charging
PART
NUMBER
(Notes 1, 2)
PART
MARKING
ISL6255HRZ
ISL6255HRZ
-10 to 100
28 Ld 5x5 QFN L28.55
• Pb-Free Plus Anneal Available (RoHS Compliant)
ISL6255HAZ
ISL6255HAZ
-10 to 100
28 Ld QSOP
Applications
ISL6255AHRZ ISL6255AHRZ
-10 to 100
28 Ld 5x5 QFN L28.55
ISL6255AHAZ ISL6255AHAZ
-10 to 100
28 Ld QSOP
TEMP
RANGE (°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
M28.15
M28.15
NOTES:
• Charge Any Battery Chemistry: Li-Ion, NiCd, NiMH, etc.
• Notebook, Desknote and Sub-notebook Computers
• Personal Digital Assistant
1. Intersil Pb-free plus anneal products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
2. Add “-T” for Tape and Reel.
FN9203 Rev 2.00
May 23, 2006
Page 1 of 22
ISL6255, ISL6255A
Pinouts
ISL6255, ISL6255A
(28 LD QSOP)
TOP VIEW
27
25
24
23
CSON
ACPRN
DCPRN
DCIN
VDD
26
DCIN
1
28
DCPRN
VDD
2
27
ACPRN
ACSET
3
26
CSON
DCSET
4
25
CSOP
EN
5
24
CSIN
CELLS
6
23
CSIP
ICOMP
7
22
SGATE
VCOMP
8
21
BGATE
BGATE
ICM
9
20
PHASE
PHASE
VREF
10
19
UGATE
CHLIM
11
18
BOOT
ACLIM
12
17
VDDP
14
VADJ
13
16
LGATE
BOOT
28
ACSET
DCSET
ISL6255, ISL6255A
(28 LD QFN)
TOP VIEW
GND
14
15
PGND
22
EN
1
21
CSOP
CELLS
2
20
CSIN
ICOMP
19
3
VCOMP
4
18
ICM
5
17
15
7
FN9203 Rev 2.00
May 23, 2006
11
12
13
VDDP
10
LGATE
9
PGND
ACLIM
8
GND
CHLIM
16
6
VADJ
VREF
CSIP
SGATE
UGATE
Page 2 of 22
ISL6255, ISL6255A
Absolute Maximum Ratings
Thermal Information
DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
CSIP-SGATE, CSIP-BGATE . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
BOOT to VDDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2V to 28V
ACLIM, ACPRN, CHLIM, DCPRN, VDD to GND. . . . . . . -0.3V to 7V
BOOT-PHASE, VDDP-PGND . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
ACSET and DCSET to GND (Note 3) . . . . . . . . -0.3V to VDD+0.3V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
VREF, CELLS to GND . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Resistance
JA (°C/W)
JC (°C/W)
QFN Package (Notes 4, 5). . . . . . . . . .
39
9.5
QSOP Package (Note 4) . . . . . . . . . . .
80
NA
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET and DCSET is below 0V, the current through ACSET and DCSET should be limited to less than 1mA.
4. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, ACLIM = VREF,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF, IVDD = 0mA,
TA = -10°C to +100°C, TJ  125°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
25
V
3
mA
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
DCIN Quiescent Current
7
EN = VDD or GND, 7V DCIN 25V
Battery Leakage Current (Note 6)
DCIN = 0, no load
VDD Output Voltage/Regulation
7V DCIN 25V, 0 IVDD 30mA
VDD Undervoltage Lockout Trip Point
1.4
3
10
µA
4.925
5.075
5.225
V
VDD Rising
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
2.365
2.39
2.415
V
Reference Output Voltage VREF
0 IVREF  300µA
Battery Charge Voltage Accuracy
CSON = 16.8V, CELLS = VDD, VADJ = Float
-0.5
0.5
%
CSON = 12.6V, CELLS = GND, VADJ = Float
-0.5
0.5
%
CSON = 8.4V, CELLS = Float, VADJ = Float
-0.5
0.5
%
CSON = 17.64V, CELLS = VDD, VADJ = VREF
-0.5
0.5
%
CSON = 13.23V, CELLS = GND, VADJ = VREF
-0.5
0.5
%
CSON = 8.82V, CELLS = Float, VADJ = VREF
-0.5
0.5
%
CSON = 15.96V, CELLS = VDD, VADJ = GND
-0.5
0.5
%
CSON = 11.97V, CELLS = GND, VADJ = GND
-0.5
0.5
%
CSON = 7.98V, CELLS = Float, VADJ = GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
ACSET Input Bias Current Hysteresis
1.24
1.26
1.28
V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET  1.26V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
µA
1.24
1.26
1.28
V
DCSET Threshold
FN9203 Rev 2.00
May 23, 2006
Page 3 of 22
ISL6255, ISL6255A
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, ACLIM = VREF,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF, IVDD = 0mA,
TA = -10°C to +100°C, TJ  125°C, unless otherwise noted. (Continued)
PARAMETER
TEST CONDITIONS
DCSET Input Bias Current Hysteresis
MIN
TYP
MAX
UNITS
2.2
3.4
4.4
µA
DCSET Input Bias Current
DCSET  1.26V
2.2
3.4
4.4
µA
DCSET Input Bias Current
DCSET < 1.26V
-1
0
1
µA
245
300
355
kHz
OSCILLATOR
Frequency
PWM Ramp Voltage (peak-peak)
CSIP = 18V
1.6
V
CSIP = 11V
1
V
SYNCHRONOUS BUCK REGULATOR
Maximum Duty Cycle
97
99
99.6
%
3.0

UGATE Pull-Up Resistance
BOOT-PHASE = 5V, 500mA source current
1.8
UGATE Source Current
BOOT-PHASE = 5V, BOOT-UGATE = 2.5V
1.0
UGATE Pull-down Resistance
BOOT-PHASE = 5V, 500mA sink current
1.0
UGATE Sink Current
BOOT-PHASE = 5V, UGATE-PHASE = 2.5V
1.8
LGATE Pull-Up Resistance
VDDP-PGND = 5V, 500mA source current
1.8
LGATE Source Current
VDDP-PGND = 5V, VDDP-LGATE = 2.5V
1.0
LGATE Pull-Down Resistance
VDDP-PGND = 5V, 500mA sink current
1.0
LGATE Sink Current
VDDP-PGND = 5V, LGATE = 2.5V
1.8
A
1.8

A
3.0

A
1.8

A
CHARGING CURRENT SENSING AMPLIFIER
Input Common-Mode Range
0
V
Input Offset Voltage
Guaranteed by design
0
2.5
mV
Input Bias Current at CSOP
0 < CSOP < 18V
0.25
2
µA
Input Bias Current at CSON
0 < CSON < 18V
75
100
µA
3.6
V
CHLIM Input Voltage Range
CSOP to CSON Full-Scale Current Sense
Voltage
-2.5
18
0
ISL6255: CHLIM = 3.3V
157
165
173
mV
ISL6255A: CHLIM = 3.3V
160
165
170
mV
ISL6255: CHLIM = 2.0V
95
100
105
mV
ISL6255A: CHLIM = 2.0V
97
100
103
mV
ISL6255: CHLIM = 0.2V
5.0
10
15.0
mV
ISL6255A: CHLIM = 0.2V
7.5
10
12.5
mV
CHLIM Input Bias Current
CHLIM = GND or 3.3V, DCIN = 0V
-1
1
µA
CHLIM Power-Down Mode Threshold
Voltage
CHLIM rising
80
88
95
mV
15
25
40
mV
7
25
V
-2
2
mV
CHLIM Power-Down Mode Hysteresis
Voltage
ADAPTER CURRENT SENSING AMPLIFIER
Input Common-Mode Range
Input Offset Voltage
Guaranteed by design
Input Bias Current at CSIP and CSIN
Combined
CSIP = CSIN = 25V
100
130
µA
Input Bias Current at CSIN
0 < CSIN < DCIN, Guaranteed by design
0.10
1
µA
FN9203 Rev 2.00
May 23, 2006
Page 4 of 22
ISL6255, ISL6255A
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, ACLIM = VREF,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF, IVDD = 0mA,
TA = -10°C to +100°C, TJ  125°C, unless otherwise noted. (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ADAPTER CURRENT LIMIT THRESHOLD
CSIP to CSIN Full-Scale Current Sense
Voltage
ACLIM = VREF
97
100
103
mV
ACLIM = Float
72
75
78
mV
ACLIM = GND
47
50
53
mV
ACLIM Input Bias Current
ACLIM = VREF
10
16
20
µA
ACLIM = GND
-20
-16
-10
µA
VOLTAGE REGULATION ERROR AMPLIFIER
Error Amplifier Transconductance from
CSON to VCOMP
CELLS = VDD
30
µA/V
Charging Current Error Amplifier
Transconductance
50
µA/V
Adapter Current Error Amplifier
Transconductance
50
µA/V
CURRENT REGULATION ERROR AMPLIFIER
BATTERY CELL SELECTOR
CELLS Input Voltage for 4 Cell Select
4.3
V
CELLS Input Voltage for 3 Cell Select
CELLS Input Voltage for 2 Cell Select
2.1
2
V
4.2
V
MOSFET DRIVER
BGATE Pull-Up Current
CSIP-BGATE = 3V
10
30
45
mA
BGATE Pull-Down Current
CSIP-BGATE = 5V
2.7
4.0
5.0
mA
CSIP-BGATE Voltage High
8
9.6
11
V
CSIP-BGATE Voltage Low
50
0
50
mV
-100
0
100
mV
250
300
400
mV
DCIN-CSON Threshold for CSIP-BGATE
Going High
DCIN = 12V, CSON Rising
DCIN-CSON Threshold Hysteresis
SGATE Pull-Up Current
CSIP-SGATE = 3V
7
12
15
mA
SGATE Pull-Down Current
CSIP-SGATE = 5V
50
160
370
µA
CSIP-SGATE Voltage High
8
9
11
V
CSIP-SGATE Voltage Low
-50
0
50
mV
CSIP-CSIN Threshold for CSIP-SGATE
Going High
2.5
8
13
mV
CSIP-CSIN Threshold Hysteresis
1.3
5
8
mV
VDD
V
V
LOGIC INTERFACE
EN Input Voltage Range
EN Threshold Voltage
0
Rising
1.030
1.06
1.100
Falling
0.985
1.000
1.025
V
Hysteresis
30
60
90
mV
EN Input Bias Current
EN = 2.5V
1.8
2.0
2.2
µA
ACPRN Sink Current
ACPRN = 0.4V
3
8
11
mA
ACPRN Leakage Current
ACPRN = 5V
0.5
µA
DCPRN Sink Current
DCPRN = 0.4V
11
mA
FN9203 Rev 2.00
May 23, 2006
-0.5
3
8
Page 5 of 22
ISL6255, ISL6255A
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, ACLIM = VREF,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF, IVDD = 0mA,
TA = -10°C to +100°C, TJ  125°C, unless otherwise noted. (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
-0.5
MAX
UNITS
0.5
µA
DCPRN Leakage Current
DCPRN = 5V
ICM Output Accuracy
(Vicm = 19.9 x (Vcsip-Vcsin))
CSIP-CSIN = 100mV
-3
0
+3
%
CSIP-CSIN = 75mV
-4
0
+4
%
CSIP-CSIN = 50mV
-5
0
+5
%
Thermal Shutdown Temperature
150
°C
Thermal Shutdown Temperature Hysteresis
25
°C
NOTE:
6. This is the sum of currents in these pins (CSIP, CSIN, BGATE, BOOT, UGATE, PHASE, CSOP, CSON) all tied to 16.8V. No current in pins EN,
ACSET, DCSET, VADJ, CELLS, ACLIM, CHLIM.
Typical Operating Performance
DCIN = 20V, 4S2P Li-Battery, TA = 25°C, unless otherwise noted.
0.1
VREF LOAD REGULATION ACCURACY (%)
VDD LOAD REGULATION ACCURACY (%)
0.6
VDD=5.075V
EN=0
0.3
0
-0.3
-0.6
0
8
16
24
32
VREF=2.390V
0.08
0.06
0.04
0.02
0
0
40
100
10
400
1
Test
9
8
0 .9 6
7
VCSON=12.6V
(3 CELLS)
0 .9 2
6
EFFICIENCY (%)
| ICM ACCURACY | (%)
300
FIGURE 2. VREF LOAD REGULATION
FIGURE 1. VDD LOAD REGULATION
5
4
3
2
VCSON=8.4V
2 CELLS
VCSON=16.8V
4 CELLS
0 .8 8
0 .8 4
0 .8
1
0
200
LOAD CURRENT (µA)
LOAD CURRENT (mA)
10
20
30
40
50
60
70
80
90
100
CSIP-CSIN (mV)
FIGURE 3. ICM ACCURACY vs AC ADAPTER CURRENT
FN9203 Rev 2.00
May 23, 2006
0 .76
0
0 .5
1
1.5
2
2.5
3
3 .5
4
CHARGE CURRENT (A)
FIGURE 4. SYSTEM EFFICIENCY vs CHARGE CURRENT
Page 6 of 22
ISL6255, ISL6255A
Typical Operating Performance
DCIN = 20V, 4S2P Li-Battery, TA = 25°C, unless otherwise noted. (Continued)
LOAD
CURRENT
5A/div
DCIN
10V/div
ADAPTER
CURRENT
5A/div
ACSET
1V/div
DCSET
1V/div
DCPRN
5V/div
CHARGE
CURRENT
2A/div
LOAD STEP: 0-4A
CHARGE CURRENT: 3A
AC ADAPTER CURRENT LIMIT: 5.15A
BATTERY
VOLTAGE
2V/div
ACPRN
5V/div
FIGURE 5. AC AND DC ADAPTER DETECTION
FIGURE 6. LOAD TRANSIENT RESPONSE
CSON
5V/div
INDUCTOR
CURRENT
2A/div
EN
5V/div
INDUCTOR
CURRENT
2A/div
CHARGE
CURRENT
2A/div
FIGURE 7. CHARGE ENABLE AND SHUTDOWN
BATTERY
INSERTION
BATTERY
REMOVAL
CSON
10V/div
VCOMP
2V/div
VCOMP
ICOMP
ICOMP
2V/div
FIGURE 8. BATTERY INSERTION AND REMOVAL
CHLIM=0.2V
CSON=8V
PHASE
10V/div
PHASE
10V/div
FIGURE 9. AC ADAPTER REMOVAL
FN9203 Rev 2.00
May 23, 2006
INDUCTOR
CURRENT
1A/div
UGATE
2V/div
UGATE
5V/div
LGATE
2V/div
FIGURE 10. AC ADAPTER INSERTION
Page 7 of 22
ISL6255, ISL6255A
Typical Operating Performance
ADAPTER REMOVAL
DCIN = 20V, 4S2P Li-Battery, TA = 25°C, unless otherwise noted. (Continued)
BGATE-CSIP
2V/div
SGATE-CSIP
2V/div
SYSTEM BUS
VOLTAGE
10V/div
SYSTEM BUS
VOLTAGE
10V/div
SGATE-CSIP
2V/div
BGATE-CSIP
2V/div
INDUCTOR
CURRENT
2A/div
ADAPTER INSERTION
INDUCTOR
CURRENT
2A/div
FIGURE 12. SWITCHING WAVEFORMS IN CC MODE
FIGURE 11. SWITCHING WAVEFORMS AT DIODE EMULATION
CHARGE
CURRENT
1A/div
CHLIM
1V/div
FIGURE 13. TRICKLE TO FULL-SCALE CHARGING
Functional Pin Descriptions
PHASE
BOOT
The Phase connection pin connects to the high side MOSFET
source, output inductor, and low side MOSFET drain.
Connect BOOT to a 0.1µF ceramic capacitor to PHASE pin
and connect to the cathode of the bootstrap schottky diode.
UGATE
UGATE is the high side MOSFET gate drive output.
SGATE
SGATE is the AC adapter power source select output. The
SGATE pin drives an external P-MOSFET used to switch to AC
adapter as the system power source.
BGATE
Battery power source select output. This pin drives an external
P-channel MOSFET used to switch the battery as the system
power source. When the voltage at CSON pin is higher than
the AC adapter output voltage at DCIN, BGATE is driven to low
and selects the battery as the power source.
CSOP/CSON
CSOP/CSON is the battery charging current sensing
positive/negative input. The differential voltage across CSOP
and CSON is used to sense the battery charging current, and
is compared with the charging current limit threshold to
regulate the charging current. The CSON pin is also used as
the battery feedback voltage to perform voltage regulation.
CSIP/CSIN
CSIP/CSIN is the AC adapter current sensing positive/negative
input. The differential voltage across CSIP and CSIN is used to
sense the AC adapter current, and is compared with the AC
adapter current limit to regulate the AC adapter current.
GND
GND is an analog ground.
LGATE
LGATE is the low side MOSFET gate drive output; swing
between 0V and VDDP.
FN9203 Rev 2.00
May 23, 2006
Page 8 of 22
ISL6255, ISL6255A
DCIN
VDDP
The DCIN pin is the input of the internal 5V LDO. Connect it to
the AC adapter output. Connect a 0.1µF ceramic capacitor
from DCIN to CSON.
VDDP is the supply voltage for the low-side MOSFET gate
driver. Connect a 4.7 resistor to VDD and a 1F ceramic
capacitor to power ground.
ACSET
ICOMP
ACSET is an AC adapter detection input. Connect to a resistor
divider from the AC adapter output.
ICOMP is a current loop error amplifier output.
ACPRN
VCOMP is a voltage loop amplifier output.
Open-drain output signals AC adapter is present. ACPRN pulls
low when ACSET is higher than 1.26V; and pulled high when
ACSET is lower than 1.26V.
DCSET
DCSET is a lower voltage adapter detection input (like aircraft
power 15V).Allows the adapter to power the system where
battery charging has been disabled.
DCPRN
Open-drain output signals DC adapter is present. DCPRN pulls
low when DCSET is higher than 1.26V; and pulled high when
DCSET is lower than 1.26V.
EN
EN is the Charge Enable input. Connecting EN to high enables
the charge control function, connecting EN to low disables
charging functions. Use with a thermistor to detect a hot
battery and suspend charging.
VCOMP
CELLS
This pin is used to select the battery voltage. CELLS = VDD for
a 4S battery pack, CELLS = GND for a 3S battery pack,
CELLS = Float for a 2S battery pack.
VADJ
VADJ adjusts battery regulation voltage. VADJ = VREF for
4.2V+5%/cell; VADJ = Floating for 4.2V/cell; VADJ = GND for
4.2V-5%/cell. Connect to a resistor divider to program the
desired battery cell voltage between 4.2V-5% and 4.2V+5%.
CHLIM
CHLIM is the battery charge current limit set pin.CHLIM input
voltage range is 0.1V to 3.6V. When CHLIM = 3.3V, the set
point for CSOP-CSON is 165mV. The charger shuts down if
CHLIM is forced below 88mV.
ACLIM
ICM is the adapter current output. The output of this pin
produces a voltage proportional to the adapter current.
ACLIM is the adapter current limit set pin. ACLIM = VREF for
100mV, ACLIM = Floating for 75mV, and ACLIM = GND for
50mV. Connect a resistor divider to program the adapter
current limit threshold between 50mV and 100mV.
PGND
VREF
PGND is the power ground. Connect PGND to the source of
the low side MOSFET.
VREF is a 2.39V reference output pin. It is internally
compensated. Do not connect a decoupling capacitor.
ICM
VDD
VDD is an internal LDO output to supply IC analog circuit.
Connect a 1F ceramic capacitor to ground.
FN9203 Rev 2.00
May 23, 2006
Page 9 of 22
ISL6255, ISL6255A
VDDP
VDDP
ACLIM
Limit Set
Adapter
152K
Current Limit Set
152K
VREF
+
Adapter
1.27V
Current
+
+
Min
Current
Buffer
gm3
+
gm3
+
LGATE
PGND
-
1.26V
+
+
+ CA1 CA1´ 19.9
CSOP
CHLIM
+
+
EN
ICM
SGATE CSIP
CSIN
BOOT
VDD
DCIN
BGATE
+
1.26V -
CSON
1.06V
- 1.065V
ACSET
LDO
LDO
Regulator
Regulator
CSON
-
´ 20
X
CA2
- CA2
ACPRN
UGATE
2.1V
PHASE
+
Reference
2.1V
CA2
BOOT
ICOMP
+-
Min
Min
Voltage
Voltage
Buffer
Buffer
VDD
DCSET
GND
gm2
+
gm1
-
VDDP
CELLS
VCA2V
VDD
UGATE
PWM
+
+
+
Voltage
+ Selector
-
DCIN
VCOMP
LGATE
PHASE
514K
++0.25V
0.25
VCA2
CA2
Voltage
Selector
0.25V
0.25
VCA2
CA2
VREF
gm1
+
LDO
LDO
Regulator
Regulator
514K
PWM
+
+
514K
+++--
gm1
Voltage +
Selector
VREF
VADJ
VREF
Min
Min
Voltage
Voltage
Buffer
Buffer
+
gm1
-
-
VADJ
VDDP
VCOMP
gm2
PGND
ICOMP
Min
Current
Buffer
VCA2V
CA2
Current Limit Set
2.1V
Voltage
+ Selector
-
Adapter
1.27V
Current
Limit Set
Adapter
BGATE
514K
1.06V
- 1.065V
152K
gm3
+
gm3
+
-
2.1V
ACLIM
152K
CSON
1.26V
CELLS
EN
+
-
VDD
´ 20
CA2
- CA2
+
Reference
VREF
+
1.26V -
VREF
CHLIM
CSOP
+
+
DCPRN
DCSET
+ CA1 CA1´X19.9
-
+
ACPRN
CSIN
CSON
ACSET
SGATE CSIP
GND
ICM
DCPRN
FIGURE 14. FUNCTIONAL BLOCK DIAGRAM
FN9203 Rev 2.00
May 23, 2006
Page 10 of 22
ISL6255, ISL6255A
Q3
AC ADAPTER
VDD
R8
130k
1%
Q5
R9
10.2k
1%
C8
0.1µF CSON
DCIN
DCIN
R5
100k
C9
1
1µF
VDDP
VDDP
CSIN
CSIN
VDD
VDD
FLOATING
4.2V/CELL
CHARGE
ENABLE
VDDP
SYSTEM LOAD
Q4
D2
UGATE
UGATE
ICOMP
ICOMP
PHASE
PHASE
VCOMP
VCOMP
LGATE
PGND
PGND
EN
EN
CSOP
CSOP
ACLIM
ACLIM
CSON
CSON
CHLIM
CHLIM
Q1
C4
0.1
0.1µF
D1
Optional
Q2
VADJ
VADJ
R12
2.6A CHARGE LIMIT
20k 1% 253mA Trickle Charge
R11
130k
1%
C1:10 µF
BOOT
BOOT
ACPRN
ACPRN
VREF
VREF
R13
1.87k
1%
R2
20m
R3
18
BGATE
C6:6.8nF
R6: 10k C5:10nF
TRICKLE
CHARGE
C2
0.1
0.1µF
ISL6255
ISL6255
ISL6255A
ISL6255A
ISL6255A
R10
4.7
3.3V
VREF
CSIP
ACSET
ACSET
C7
1µF
1
To Host
Controller
SGATE
C3
1
1µF
CELLS
R4
2.2
R1
40m
BAT+
VDD
4 CELLS
C10
10
10µF
Battery
Pack
BAT-
ICM
R7: 100
GND
L
10µH
C11
3300pF
Q6
FIGURE 15. ISL6255, ISL6255A TYPICAL APPLICATION CIRCUIT WITH FIXED CHARGING PARAMETERS
FN9203 Rev 2.00
May 23, 2006
Page 11 of 22
ISL6255, ISL6255A
ADAPTER
R14
100k
1%
DCIN
DCIN
ACSET
ACSET
C7
1µF
SGATE
SGATE
CSIP
CSIP
C2
0.1µF
0.1
R10
4.7
C9
1
1µF
Q4
VDDP
DCPRN
DCPRN
PHASE
PHASE
D1
Optional
LGATE
LGATE
A/D INPUT
PGND
PGND
EN
EN
CSOP
CSOP
C3
1
1µF
ICM
ICM
C11
3300pF
VREF
5.15A INPUT
CURRENT LIMIT
R11,R12
R13: 10K
CHLIM
CHLIM
C6
6.8nF
ACLIM
ACLIM
Q1
C4
0.1µF
0.1
Q2
R7: 100
C1:10µF
C1:10
D2
UGATE
UGATE
ACPRN
ACPRN
OUTPUT
SYSTEM LOAD
BOOT
BOOT
VDD
VDD
R5
100k
R2
20m
R3: 18
ISL6255A
ISL6255A
ISL6255A
BGATE
BGATE
VDDP
VDDP
D/A OUTPUT
AVDD/VREF
CSON
CSIN
ISL6255 CSIN
ISL6255
ISL6255
DIGITAL
INPUT
HOST
Q3
DCSET
DCSET
VCC
DIGITAL
INPUT
Q5
R9
10.2k
1%
R15
11.5k
1%
R16
100k
C8
0.1µ
0.1
VDD
R8
130k
1%
R4
2.2
L
10µH
10
R1
40m
CSON
CSON
CELLS
CELLS
VREF
VREF
VADJ
VADJ
ICOMP
ICOMP
GND
GND
BAT+
GND
3 CELLS
FLOATING
4.2V/CELL
C10
10µF
10
BATTERY
Pack
VCOMP
VCOMP
SCL
SDL
A/D INPUT
GND
R6
10k
C5
10nF
SCL
SDL
TEMP
BAT-
FIGURE 16. ISL6255, ISL6255A TYPICAL APPLICATION CIRCUIT WITH µP CONTROL AND AIRCRAFT POWER SUPPORT
FN9203 Rev 2.00
May 23, 2006
Page 12 of 22
ISL6255, ISL6255A
Theory of Operation
Introduction
The ISL6255, ISL6255A includes all of the functions necessary
to charge 2 to 4 cell Li-Ion and Li-polymer batteries. A high
efficiency synchronous buck converter is used to control the
charging voltage and charging current up to 10A. The ISL6255,
ISL6255A has input current limiting and analog inputs for
setting the charge current and charge voltage; CHLIM inputs
are used to control charge current and VADJ inputs are used to
control charge voltage.
The ISL6255, ISL6255A charges the battery with constant
charge current, set by CHLIM input, until the battery voltage
rises up to a programmed charge voltage set by VADJ input;
then the charger begins to operate at a constant voltage charge
mode. The charger also drives an adapter isolation P-channel
MOSFET to efficiently switch in the adapter supply.
ISL6255, ISL6255A is a complete power source selection
controller for single battery systems and also aircraft power
applications. It drives a battery selector P-channel MOSFET to
efficiently select between a single battery and the adapter. It
controls the battery discharging MOSFET and switches to the
battery when the AC adapter is removed, or, switches to the
AC adapter when the AC adapter is inserted for single battery
system.
The EN input allows shutdown of the charger through a
command from a micro-controller. It also uses EN to safely
shutdown the charger when the battery is in extremely hot
conditions. The amount of adapter current is reported on the
ICM output. Figure 14 shows the IC functional block diagram.
The synchronous buck converter uses external N-channel
MOSFETs to convert the input voltage to the required charging
current and charging voltage. Figure 15 shows the ISL6255,
ISL6255A typical application circuit with charging current and
charging voltage fixed at specific values. The typical
application circuit shown in Figure 16 shows the ISL6255,
ISL6255A typical application circuit which uses a microcontroller to adjust the charging current set by CHLIM input for
aircraft power applications. The voltage at CHLIM and the
value of R1 sets the charging current. The DC/DC converter
generates the control signals to drive two external N-channel
MOSFETs to regulate the voltage and current set by the
ACLIM, CHLIM, VADJ and CELLS inputs.
The ISL6255, ISL6255A features a voltage regulation loop
(VCOMP) and two current regulation loops (ICOMP). The
VCOMP voltage regulation loop monitors CSON to ensure that
its voltage never exceeds the voltage and regulates the battery
charge voltage set by VADJ. The ICOMP current regulation
loops regulate the battery charging current delivered to the
battery to ensure that it never exceeds the charging current
limit set by CHLIM; and the ICOMP current regulation loops
also regulate the input current drawn from the AC adapter to
ensure that it never exceeds the input current limit set by
FN9203 Rev 2.00
May 23, 2006
ACLIM, and to prevent a system crash and AC adapter
overload.
PWM Control
The ISL6255, ISL6255A employs a fixed frequency PWM
current mode control architecture with a feed-forward function.
The feed-forward function maintains a constant modulator gain
of 11 to achieve fast line regulation as the buck input voltage
changes. When the battery charge voltage approaches the
input voltage, the DC/DC converter operates in dropout mode,
where there is a timer to prevent the frequency from dropping
into the audible frequency range. It can achieve duty cycle of
up to 99.6%.
To prevent boosting of the system bus voltage, the battery
charger operates in standard-buck mode when CSOP-CSON
drops below 4.25mV. Once in standard-buck mode, hysteresis
does not allow synchronous operation of the DC/DC converter
until CSOP-CSON rises above 12.5mV.
An adaptive gate drive scheme is used to control the dead time
between two switches. The dead time control circuit monitors
the LGATE output and prevents the upper side MOSFET from
turning on until LGATE is fully off, preventing cross-conduction
and shoot-through. In order for the dead time circuit to work
properly, there must be a low resistance, low inductance path
from the LGATE driver to MOSFET gate, and from the source
of MOSFET to PGND. The external Schottky diode is between
the VDDP pin and BOOT pin to keep the bootstrap capacitor
charged.
Setting the Battery Regulation Voltage
The ISL6255, ISL6255A uses a high-accuracy trimmed bandgap voltage reference to regulate the battery charging voltage.
The VADJ input adjusts the charger output voltage, and the
VADJ control voltage can vary from 0 to VREF, providing a
10% adjustment range (from 4.2V-5% to 4.2V+5%) on CSON
regulation voltage. An overall voltage accuracy of better than
0.5% is achieved.
The per-cell battery termination voltage is a function of the
battery chemistry. Consult the battery manufacturers to
determine this voltage.
• Float VADJ to set the battery voltage VCSON = 4.2V 
number of the cells,
• Connect VADJ to VREF to set 4.41V  number of cells,
• Connect VADJ to ground to set 3.99V  number of the cells.
So, the maximum battery voltage of 17.6V can be achieved. Note
that other battery charge voltages can be set by connecting a
resistor divider from VREF to ground. The resistor divider should
be sized to draw no more than 100µA from VREF; or connect a
low impedance voltage source like the D/A converter in the microcontroller. The programmed battery voltage per cell can be
determined by the following equation:
VCELL  0.175 VVADJ  3.99 V
Page 13 of 22
ISL6255, ISL6255A
An external resistor divider from VREF sets the voltage at
VADJ according to:
R bot_VADJ  514k
V VADJ = VREF  ------------------------------------------------------------------------------------------------R top_VADJ  514k + R
 514k
bot_VADJ
where Rbot_VADJ and Rtop_VADJ are external resistors at
VADJ.
To minimize accuracy loss due to interaction with VADJ's
internal resistor divider, ensure the AC resistance looking back
into the resistor divider is less than 25k.
Connect CELLS as shown in Table 1 to charge 2, 3 or 4 Li+
cells. When charging other cell chemistries, use CELLS to
select an output voltage range for the charger. The internal
error amplifier gm1 maintains voltage regulation. The voltage
error amplifier is compensated at VCOMP. The component
values shown in Figure 16 provide suitable performance for
most applications. Individual compensation of the voltage
regulation and current-regulation loops allows for optimal
compensation.
TABLE 1. CELL NUMBER PROGRAMMING
CELLS
CELL NUMBER
VDD
4
GND
3
Float
2
Setting the Battery Charge Current Limit
The CHLIM input sets the maximum charging current. The
current set by the current sense-resistor connects between
CSOP and CSON. The full-scale differential voltage between
CSOP and CSON is 165mV for CHLIM = 3.3V, so the
maximum charging current is 4.125A for a 40m sensing
resistor. Other battery charge current-sense threshold values
can be set by connecting a resistor divider from VREF or 3.3V
to ground, or by connecting a low impedance voltage source
like a D/A converter in the micro-controller. Unlike VADJ and
ACLIM, CHLIM does not have an internal resistor divider
network. The charge current limit threshold is given by:
165mV V CHLIM
I CHG = ------------------- ---------------------3.3V
R1
To set the trickle charge current for the dumb charger, a
resistor in series with a switch Q6 (Figure 15) controlled by the
micro-controller is connected from CHLIM pin to ground. The
trickle charge current is determined by:
165mV V CHLIM ,trickle
I CHG = ------------------- ---------------------------------------3.3V
R1
When the CHLIM voltage is below 88mV (typical), it will disable
the battery charge. When choosing the current sensing
resistor, note that the voltage drop across the sensing resistor
causes further power dissipation, reducing efficiency. However,
adjusting CHLIM voltage to reduce the voltage across the
FN9203 Rev 2.00
May 23, 2006
current sense resistor R1 will degrade accuracy due to the
smaller signal to the input of the current sense amplifier. There
is a trade-off between accuracy and power dissipation. A low
pass filter is recommended to eliminate switching noise.
Connect the resistor to the CSOP pin instead of the CSON pin,
as the CSOP pin has lower bias current and less influence on
current-sense accuracy and voltage regulation accuracy.
Setting the Input Current Limit
The total input current from an AC adapter, or other DC source,
is a function of the system supply current and the batterycharging current. The input current regulator limits the input
current by reducing the charging current, when the input
current exceeds the input current limit set point. System
current normally fluctuates as portions of the system are
powered up or down. Without input current regulation, the
source must be able to supply the maximum system current
and the maximum charger input current simultaneously. By
using the input current limiter, the current capability of the AC
adapter can be lowered, reducing system cost.
The ISL6255, ISL6255A limits the battery charge current when
the input current-limit threshold is exceeded, ensuring the
battery charger does not load down the AC adapter voltage.
This constant input current regulation allows the adapter to
fully power the system and prevent the AC adapter from
overloading and crashing the system bus.
An internal amplifier gm3 compares the voltage between CSIP
and CSIN to the input current limit threshold voltage set by
ACLIM. Connect ACLIM to REF, Float and GND for the fullscale input current limit threshold voltage of 100mV, 75mV and
50mV, respectively, or use a resistor divider from VREF to
ground to set the input current limit as the following equation
1  0.05

VACLIM  0.050 
IINPUT 

R2  VREF

An external resistor divider from VREF sets the voltage at
ACLIM according to:
R bot_ACLIM  152k
V ACLIM = VREF  -----------------------------------------------------------------------------------------------------R top_ACLIM  152k + R
 152k
bot_ACLIM
where Rbot_ACLIM and Rtop_ACLIM are external resistors at
ACLIM.
To minimize accuracy loss due to interaction with ACLIM's
internal resistor divider, ensure the AC resistance looking back
into the resistor divider is less than 25k.
When choosing the current sense resistor, note that the
voltage drop across this resistor causes further power
dissipation, reducing efficiency. The AC adapter current sense
accuracy is very important. Use a 1% tolerance current-sense
resistor. The highest accuracy of ±3% is achieved with 100mV
current-sense threshold voltage for ACLIM = VREF, but it has
the highest power dissipation. For example, it has 400mW
power dissipation for rated 4A AC adapter and 1W sensing
Page 14 of 22
ISL6255, ISL6255A
resistor may have to be used. ±4% and ±6% accuracy can be
achieved with 75mV and 50mV current-sense threshold
voltage for ACLIM = Floating and ACLIM = GND, respectively.
LDO Regulator
A low pass filter is suggested to eliminate the switching noise.
Connect the resistor to CSIN pin instead of CSIP pin because
CSIN pin has lower bias current and less influence on the
current-sense accuracy.
VDD provides a 5.0V supply voltage from the internal LDO
regulator from DCIN and can deliver up to 30mA of current.
The MOSFET drivers are powered by VDDP, which must be
connected to VDDP as shown in Figure 15. VDDP connects to
VDD through an external low pass filter. Bypass VDDP and
VDD with a 1µF capacitor.
AC Adapter Detection
Shutdown
Connect the AC adapter voltage through a resistor divider to
ACSET to detect when AC power is available, as shown in
Figure 15. ACPRN is an open-drain output and is high when
ACSET is less than Vth,rise, and active low when ACSET is
above Vth,fall. Vth,rise and Vth,fall are given by:
The ISL6255, ISL6255A features a low-power shutdown mode.
Driving EN low shuts down the ISL6255, ISL6255A. In
shutdown, the DC/DC converter is disabled, and VCOMP and
ICOMP are pulled to ground. The ICM, ACPRN and DCPRN
outputs continue to function.
R

Vth ,rise   8  1   VACSET
 R9

EN can be driven by a thermistor to allow automatic shutdown
of the ISL6255, ISL6255A when the battery pack is hot. Often a
NTC thermistor is included inside the battery pack to measure
its temperature. When connected to the charger, the thermistor
forms a voltage divider with a resistive pull-up to the VREF.
The threshold voltage of EN is 1.0V with 60mV hysteresis. The
thermistor can be selected to have a resistance vs temperature
characteristic that abruptly decreases above a critical
temperature. This arrangement automatically shuts down the
ISL6255, ISL6255A when the battery pack is above a critical
temperature.

R
Vth,fall   8  1   V ACSET  I hys R8
R

 9
Where Ihys is the ACSET input bias current hysteresis and
VACSET = 1.24V (min), 1.26V (typ) and 1.28V (max). The
hysteresis is IhysR8, where Ihys = 2.2µA (min), 3.4µA (typ) and
4.4µA (max).
DC Adapter Detection
Connect the DC adapter voltage like aircraft power through a
resistor divider to DCSET to detect when DC power is
available, as shown in Figure 16. DCPRN is an open-drain
output and is high when DCSET is less than Vth,rise, and
active low when DCSET is above Vth,fall. Vth,rise and Vth,fall
are given by:
 R 14

V th rise =  ---------- + 1  V DCSET
 R 15

 R 14

V th fall =  ---------- + 1  V DCSET – I hys R 14
 R 15

Where Ihys is the DCSET input bias current hysteresis and
VDCSET = 1.24V (min), 1.26V (typ) and 1.28V (max). The
hysteresis is IhysR14, where Ihys = 2.2µA (min), 3.4µA (typ)
and 4.4µA (max).
Current Measurement
Use ICM to monitor the input current being sensed across
CSIP and CSIN. The output voltage range is 0 to 2.5V. The
voltage of ICM is proportional to the voltage drop across CSIP
and CSIN, and is given by the following equation:
ICM = 19.9  I INPUT  R 2
where IINPUT is the DC current drawn from the AC adapter.
ICM has ±3% accuracy. It is recommended to have an RC filter
at the ICM output for minimizing the switching noise.
FN9203 Rev 2.00
May 23, 2006
Another method for inhibiting charging is to force CHLIM below
85mV (typ).
Supply Isolation
If the voltage across the adapter sense resistor R2 is typically
greater than 8mV, the P-channel MOSFET controlled by
SGATE is turned on reducing the power dissipation. If the
voltage across the adapter sense resistor R2 is less than 3mV,
SGATE turns off the P-channel MOSFET isolating the adapter
from the system bus.
Battery Power Source Selection and Aircraft Power
Application
The battery voltage is monitored by CSON. If the battery voltage
measured on CSON is less than the adapter voltage measured
on DCIN, then the P-channel MOSFET controlled by BGATE
turns off and the P-channel MOSFET controlled by SGATE is
allowed to turn on when the adapter current is high enough. If it is
greater, then the P-channel MOSFET controlled by SGATE turns
off and BGATE turns on the battery discharge P-channel
MOSFET to minimize the power loss. Also, the charging function
is disabled. If designing for airplane power, DCSET is tied to a
resistor divider sensing the adapter voltage. When a user is
plugged into the 15V airplane supply and the battery voltage is
lower than 15V, the MOSFET driven by BGATE (See Figure 16) is
turned off which keeps the battery from supplying the system bus.
The comparator looking at CSON and DCIN has 300mV of
hysteresis to avoid chattering. Only 2S and 3S are supported for
DC aircraft power applications. For 4S battery packs, set
DCSET = 0.
Page 15 of 22
ISL6255, ISL6255A
Short Circuit Protection and 0V Battery Charging
Since the battery charger will regulate the charge current to the
limit set by CHLIM, it automatically has short circuit protection
and is able to provide the charge current to wake up an
extremely discharged battery.
Over Temperature Protection
If the die temp exceeds 150°C, it stops charging. Once the die
temp drops below 125°C, charging will start up again.
Application Information
The following battery charger design refers to the typical
application circuit in Figure 15, where typical battery
configuration of 4S2P is used. This section describes how to
select the external components including the inductor, input
and output capacitors, switching MOSFETs, and current
sensing resistors.
Inductor Selection
The inductor selection has trade-offs between cost, size and
efficiency. For example, the lower the inductance, the smaller
the size, but ripple current is higher. This also results in higher
AC losses in the magnetic core and the windings, which
decrease the system efficiency. On the other hand, the higher
inductance results in lower ripple current and smaller output
filter capacitors, but it has higher DCR (DC resistance of the
inductor) loss, and has slower transient response. So, the
practical inductor design is based on the inductor ripple current
being ±(15-20)% of the maximum operating DC current at
maximum input voltage. The required inductance can be
calculated from:
L
VIN ,MAX  VBAT
VBAT
 IL
VIN ,MAX fs
Where VIN,MAX, VBAT, and fs are the maximum input voltage,
battery voltage and switching frequency, respectively. The
inductor ripple current I is found from:
 I L  30%  I BAT,MAX
where the maximum peak-to-peak ripple current is 30% of the
maximum charge current is used.
For VIN,MAX = 19V, VBAT = 16.8V, IBAT,MAX = 2.6A, and
fs = 300kHz, the calculated inductance is 8.3µH. Choosing the
closest standard value gives L = 10µH. Ferrite cores are often
the best choice since they are optimized at 300kHz to 600kHz
operation with low core loss. The core must be large enough
not to saturate at the peak inductor current IPeak:
I Peak  I BAT ,MAX 
1
 IL
2
Output Capacitor Selection
The output capacitor in parallel with the battery is used to
absorb the high frequency switching ripple current and smooth
FN9203 Rev 2.00
May 23, 2006
the output voltage. The RMS value of the output ripple current
Irms is given by:
IRMS 
VIN ,MAX
12 L fs
D 1  D 
where the duty cycle D is the ratio of the output voltage (battery
voltage) over the input voltage for continuous conduction mode
which is typical operation for the battery charger. During the
battery charge period, the output voltage varies from its initial
battery voltage to the rated battery voltage. So, the duty cycle
change can be in the range of between 0.5 and 0.88 for the
minimum battery voltage of 10V (2.5V/Cell) and the maximum
battery voltage of 16.8V. The maximum RMS value of the
output ripple current occurs at the duty cycle of 0.5 and is
expressed as:
I RMS 
VIN ,MAX
4 12 L f s
For VIN,MAX = 19V, L = 10H, and fs = 300kHz, the maximum
RMS current is 0.46A. A typical 10µF ceramic capacitor is a
good choice to absorb this current and also has very small
size. The tantalum capacitor has a known failure mechanism
when subjected to high surge current.
EMI considerations usually make it desirable to minimize ripple
current in the battery leads. Beads may be added in series with
the battery pack to increase the battery impedance at 300kHz
switching frequency. Switching ripple current splits between
the battery and the output capacitor depending on the ESR of
the output capacitor and battery impedance. If the ESR of the
output capacitor is 10m and battery impedance is raised to
2 with a bead, then only 0.5% of the ripple current will flow in
the battery.
MOSFET Selection
The Notebook battery charger synchronous buck converter
has the input voltage from the AC adapter output. The
maximum AC adapter output voltage does not exceed 25V.
Therefore, 30V logic MOSFET should be used.
The high side MOSFET must be able to dissipate the
conduction losses plus the switching losses. For the battery
charger application, the input voltage of the synchronous buck
converter is equal to the AC adapter output voltage, which is
relatively constant. The maximum efficiency is achieved by
selecting a high side MOSFET that has the conduction losses
equal to the switching losses. Ensure that ISL6255, ISL6255A
LGATE gate driver can supply sufficient gate current to prevent
it from conduction, which is due to the injected current into the
drain-to-source parasitic capacitor (Miller capacitor Cgd), and
caused by the voltage rising rate at phase node at the time
instant of the high-side MOSFET turning on; otherwise, crossconduction problems may occur. Reasonably slowing turn-on
speed of the high-side MOSFET by connecting a resistor
between the BOOT pin and gate drive supply source, and the
Page 16 of 22
ISL6255, ISL6255A
high sink current capability of the low-side MOSFET gate driver
help reduce the possibility of cross-conduction.
For the high-side MOSFET, the worst-case conduction losses
occur at the minimum input voltage:
PQ1,Conduction 
VOUT 2
I BAT R DSON
VIN
The optimum efficiency occurs when the switching losses
equal the conduction losses. However, it is difficult to calculate
the switching losses in the high-side MOSFET since it must
allow for difficult-to-quantify factors that influence the turn-on
and turn-off times. These factors include the MOSFET internal
gate resistance, gate charge, threshold voltage, stray
inductance, pull-up and pull-down resistance of the gate driver.
The following switching loss calculation provides a rough
estimate.
PQ1,Switching 
Qgd
Qgd
1
1
VIN ILV fs
 VIN ILP fs
 QrrVIN fs
2
Ig ,source 2
Ig ,sin k
Where Qgd: drain-to-gate charge, Qrr: total reverse recovery
charge of the body-diode in low side MOSFET, ILV: inductor valley
current, ILP: Inductor peak current, Ig,sink and Ig,source are the
peak gate-drive source/sink current of Q1, respectively.
To achieve low switching losses, it requires low drain-to-gate
charge Qgd. Generally, the lower the drain-to-gate charge, the
higher the on-resistance. Therefore, there is a trade-off
between the on-resistance and drain-to-gate charge. Good
MOSFET selection is based on the Figure of Merit (FOM),
which is a product of the total gate charge and on-resistance.
Usually, the smaller the value of FOM, the higher the efficiency
for the same application.
For the low-side MOSFET, the worst-case power dissipation
occurs at minimum battery voltage and maximum input
voltage:
PQ2

V
 1  OUT
VIN

 2
 I BAT R DSON


Choose a low-side MOSFET that has the lowest possible onresistance with a moderate-sized package like the SO-8 and is
reasonably priced. The switching losses are not an issue for
the low side MOSFET because it operates at zero-voltageswitching.
Choose a Schottky diode in parallel with low-side MOSFET Q2
with a forward voltage drop low enough to prevent the low-side
MOSFET Q2 body-diode from turning on during the dead time.
This also reduces the power loss in the high-side MOSFET
associated with the reverse recovery of the low-side MOSFET
Q2 body diode.
As a general rule, select a diode with DC current rating equal
to one-third of the load current. One option is to choose a
combined MOSFET with the Schottky diode in a single
package. The integrated packages may work better in practice
FN9203 Rev 2.00
May 23, 2006
because there is less stray inductance due to a short
connection. This Schottky diode is optional and may be
removed if efficiency loss can be tolerated. In addition, ensure
that the required total gate drive current for the selected
MOSFETs should be less than 24mA. So, the total gate charge
for the high-side and low-side MOSFETs is limited by the
following equation:
QGATE 
I GATE
fs
Where IGATE is the total gate drive current and should be less
than 24mA. Substituting IGATE = 24mA and fs = 300kHz into
the previous equation yields that the total gate charge should
be less than 80nC. Therefore, the ISL6255, ISL6255A easily
drives the battery charge current up to 8A.
Input Capacitor Selection
The input capacitor absorbs the ripple current from the
synchronous buck converter, which is given by:
Irms  IBAT
VOUT VIN  VOUT 
VIN
This RMS ripple current must be smaller than the rated RMS
current in the capacitor datasheet. Non-tantalum chemistries
(ceramic, aluminum, or OSCON) are preferred due to their
resistance to power-up surge currents when the AC adapter is
plugged into the battery charger. For Notebook battery charger
applications, it is recommend that ceramic capacitors or
polymer capacitors from Sanyo be used due to their small size
and reasonable cost.
Table 2 shows the component lists for the typical application
circuit in Figure 15.
TABLE 2. COMPONENT LIST
PARTS
C1, C10
PART NUMBERS AND MANUFACTURER
10F/25V ceramic capacitor, Taiyo Yuden
TMK325 MJ106MY X5R (3.2x2.5x1.9mm)
C2, C4, C8 0.1F/50V ceramic capacitor
C3, C7, C9 1F/10V ceramic capacitor, Taiyo Yuden
LMK212BJ105MG
C5
10nF ceramic capacitor
C6
6.8nF ceramic capacitor
C11
3300pF ceramic capacitor
D1
30V/3A Schottky diode, EC31QS03L (optional)
D2
100mA/30V Schottky Diode, Central Semiconductor
L
10H/3.8A/26m, Sumida, CDRH104R-100
Q1, Q2
30V/35m, FDS6912A, Fairchild
Q3, Q4
-30V/30m, SI4835BDY, Siliconix
Q5
Signal P-channel MOSFET, NDS352AP
Q6
Signal N-channel MOSFET, 2N7002
Page 17 of 22
ISL6255, ISL6255A
TABLE 2. COMPONENT LIST (Continued)
PARTS
R1
Transfer function F2(S) from control to inductor current is:
PART NUMBERS AND MANUFACTURER
40m, ±1%, LRC-LR2512-01-R040-F, IRC
R2
20m, ±1%, LRC-LR2010-01-R020-F, IRC
R3
18, 5%, (0805)
R4
2.2, 5%, (0805)
R5
100k, 5%, (0805)
R6
10k, 5%, (0805)
R7
100, 5%, (0805)
R8, R11
130k, 1%, (0805)
R9
10.2k, 1%, (0805)
R10
4.7, 5%, (0805)
R12
20k, 1%, (0805)
R13
1.87k, 1%, (0805)
Vin
F2 S  

Ro  RL S 2
d̂
î L
 o2
1

S
z
1
, where  z 
.
S
Ro Co
1
 oQ p
Current loop gain Ti(S) is expressed as the following equation:
T i  S  = 0.25 R T F 2  S M
where RT is the trans-resistance in current loop. RT is usually
equal to the product of the charging current sensing resistance
and the gain of the current sense amplifier, CA2. For ISL6255,
ISL6255A, RT = 20R1.
The voltage gain with open current loop is:
T v  S  = KM F 1  S A V  S 
VFB
Where K 
, VFB is the feedback voltage of the voltage
Vo
error amplifier. The Voltage loop gain with current loop closed
is given by:
Loop Compensation Design
ISL6255, ISL6255A uses a constant frequency current mode
control architecture to achieve fast loop transient response. An
accurate current sensing resistor in series with the output
inductor is used to regulate the charge current, and the sensed
current signal is injected into the voltage loop to achieve
current mode control to simplify the loop compensation design.
The inductor is not considered as a state variable for current
mode control and the system becomes a single order system.
It is much easier to design a compensator to stabilize the
voltage loop than voltage mode control. Figure 17 shows the
small signal model of the synchronous buck regulator.
PWM Comparator Gain Fm:
Lv ( S ) 
Tv S 
1  Ti S 
If Ti(S)>>1, then it can be simplified as follows:
S
1 + ----------- esr
4 VF B  RO + RL 
1
L V  S  = --------------- ------------------------------ ------------------------ A V  S   P  ----------------RT
VO
S
RO CO
1 + -------
P
From the above equation, it is shown that the system is a
single order system, which has a single pole located at  p
before the half switching frequency. Therefore, simple type II
compensator can be easily used to stabilize the system.
The PWM comparator gain Fm for peak current mode control
is given by:
+
î in
11
M = --------- .
V IN
v̂ in
ILd̂
1:D
îL
L
Vind̂
+
Power Stage Transfer Functions
v̂
F1 S   o  Vin
d̂
S2
 o2
Where  esr 

VCA2
S
 esr
Co
Ti(S)
S
1
 oQ p
1
Co
, Q p  Ro
, o 
Rc Co
L
Rc
Ro
RT
Transfer function F1(S) from control to output voltage is:
1
v̂ o
d̂
1
LC o
K
11/Vin
0.25VCA2 +
-
Tv(S)
v̂ comp
-Av(S)
FIGURE 17. SMALL SIGNAL MODEL OF SYNCHRONOUS
BUCK REGULATOR
FN9203 Rev 2.00
May 23, 2006
Page 18 of 22
ISL6255, ISL6255A
PCB Layout Considerations
Vo
Power and Signal Layers Placement on the PCB
VFB
VREF
+
gm
VCOMP
As a general rule, power layers should be close together, either
on the top or bottom of the board, with signal layers on the
opposite side of the board. As an example, layer arrangement
on a 4-layer board is shown below:
R1
C1
1. Top Layer: signal lines, or half board for signal lines and the
other half board for power lines
2. Signal Ground
3. Power Layers: Power Ground
FIGURE 18. VOLTAGE LOOP COMPENSATOR
Figure 17 shows the voltage loop compensator, and its transfer
function is expressed as follows:
Av S  
v̂ comp
v̂ FB
where  cz 
1
 gm
S
 cz
SC1
4. Bottom Layer: Power MOSFET, Inductors and other Power
traces
Separate the power voltage and current flowing path from the
control and logic level signal path. The controller IC will stay on
the signal layer, which is isolated by the signal ground to the
power signal traces.
Component Placement
1
R1C1
Compensator design goal:
• High DC gain
1 
1

 fs
 5 20 
The power MOSFET should be close to the IC so that the gate
drive signal, the LGATE, UGATE, PHASE, and BOOT, traces
can be short.
• Gain margin: >10dB
Place the components in such a way that the area under the IC
has less noise traces with high dv/dt and di/dt, such as gate
signals and phase node signals.
• Phase margin: 40°
Signal Ground and Power Ground Connection
• Loop bandwidth fc: 
The compensator design procedure is as follows:
1. Put compensator zero at
cz  1  3 
1
RoCo
2. Put one compensator pole at zero frequency to achieve
high DC gain, and put another compensator pole at either
esr zero frequency or half switching frequency, whichever is
lower.
The loop gain Tv(S) at cross over frequency of fc has unity
gain. Therefore, the compensator resistance R1 is determined
by:
R1 
2 fcVo C o RT
8
11 g mVFB
where gm is the trans-conductance of the voltage loop error
amplifier. Compensator capacitor C1 is then given by:
C1 
1
R1  cz
Example: Vin = 20V, Vo = 16.8V, Io = 2.6A, fs = 300kHz,
Co = 10F/10m, L = 10H, gm = 250s, RT = 0.8,
VFB = 2.1V, fc = 20kHz, then compensator resistance
R1 = 10k. Put the compensator zero at 1.5kHz. The
compensator capacitor is C1 = 6.5nF. Therefore, choose
voltage loop compensator: R1 = 10k, C1 = 6.5nF.
FN9203 Rev 2.00
May 23, 2006
At minimum, a reasonably large area of copper, which will
shield other noise couplings through the IC, should be used as
signal ground beneath the IC. The best tie-point between the
signal ground and the power ground is at the negative side of
the output capacitor on each side, where there is little noise; a
noisy trace beneath the IC is not recommended.
GND and VDD Pin
At least one high quality ceramic decoupling cap should be
used to cross these two pins. The decoupling cap can be put
close to the IC.
LGATE Pin
This is the gate drive signal for the bottom MOSFET of the
buck converter. The signal going through this trace has both
high dv/dt and high di/dt, and the peak charging and
discharging current is very high. These two traces should be
short, wide, and away from other traces. There should be no
other traces in parallel with these traces on any layer.
PGND Pin
PGND pin should be laid out to the negative side of the
relevant output cap with separate traces.The negative side of
the output capacitor must be close to the source node of the
bottom MOSFET. This trace is the return path of LGATE.
Page 19 of 22
ISL6255, ISL6255A
PHASE Pin
DCIN Pin
This trace should be short, and positioned away from other
weak signal traces. This node has a very high dv/dt with a
voltage swing from the input voltage to ground. No trace
should be in parallel with it. This trace is also the return path for
UGATE. Connect this pin to the high-side MOSFET source.
This pin connects to AC adapter output voltage, and should be
less noise sensitive.
UGATE Pin
This pin has a square shape waveform with high dv/dt. It
provides the gate drive current to charge and discharge the top
MOSFET with high di/dt. This trace should be wide, short, and
away from other traces similar to the LGATE.
Copper Size for the Phase Node
The capacitance of PHASE should be kept very low to
minimize ringing. It would be best to limit the size of the
PHASE node copper in strict accordance with the current and
thermal management of the application.
Identify the Power and Signal Ground
This pin’s di/dt is as high as the UGATE; therefore, this trace
should be as short as possible.
The input and output capacitors of the converters, the source
terminal of the bottom switching MOSFET PGND should
connect to the power ground. The other components should
connect to signal ground. Signal and power ground are tied
together at one point.
CSOP, CSON Pins
Clamping Capacitor for Switching MOSFET
The current sense resistor connects to the CSON and the
CSOP pins through a low pass filter. The CSON pin is also
used as the battery voltage feedback. The traces should be
away from the high dv/dt and di/di pins like PHASE, BOOT
pins. In general, the current sense resistor should be close to
the IC. Other layout arrangements should be adjusted
accordingly.
It is recommended that ceramic caps be used closely
connected to the drain of the high-side MOSFET, and the
source of the low-side MOSFET. This capacitor reduces the
noise and the power loss of the MOSFET.
BOOT Pin
EN Pin
This pin stays high at enable mode and low at idle mode and is
relatively robust. Enable signals should refer to the signal
ground.
FN9203 Rev 2.00
May 23, 2006
Page 20 of 22
ISL6255, ISL6255A
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
2X
9
MILLIMETERS
D/2
D1
D1/2
2X
N
6
INDEX
AREA
28 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VHHD-1 ISSUE I)
0.15 C A
D
A
L28.5x5
0.15 C B
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.80
0.90
1.00
-
A1
-
0.02
0.05
-
A2
-
0.65
1.00
9
0.30
5,8
A3
1
2
3
E1/2
b
E/2
E1
E
9
0.15 C B
2X
0.15 C A
4X
0
A
9
4X P
-
4.75 BSC
2.95
3.10
7,8
9
3.25
7,8
0.50 BSC
-
k
0.20
-
-
-
L
0.50
0.60
0.75
8
N
28
2
7
3
7
3
8
P
-
-
0.60
9
NX k

-
-
12
9
7
Rev. 1 11/04
4X P
1
(DATUM A)
2
3
6
INDEX
AREA
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P &  are present when
Anvil singulation method is used and not present for saw
singulation.
(Ne-1)Xe
REF.
E2
7
E2/2
NX L
N e
8
9
CORNER
OPTION 4X
(Nd-1)Xe
REF.
BOTTOM VIEW
A1
NX b
5
SECTION "C-C"
C
L
L1
3.25
Ne
D2
2 N
C
L
3.10
5.00 BSC
Nd
D2
8
2.95
0.10 M C A B
5
NX b
(DATUM B)
A1
A3
9
e
/ / 0.10 C
0.08 C
SIDE VIEW
-
4.75 BSC
E2
C
SEATING PLANE
5.00 BSC
E1
A2
9
D
E
B
TOP VIEW
0.25
D1
D2
2X
0.20 REF
0.18
10
L
e
L1
10
L
e
C C
TERMINAL TIP
FOR ODD TERMINAL/SIDE
FN9203 Rev 2.00
May 23, 2006
FOR EVEN TERMINAL/SIDE
Page 21 of 22
ISL6255, ISL6255A
Shrink Small Outline Plastic Packages (SSOP)
Quarter Size Outline Plastic Packages (QSOP)
M28.15
N
INDEX
AREA
H
0.25(0.010) M
E
2
SYMBOL
3
0.25
0.010
SEATING PLANE
-A-
INCHES
GAUGE
PLANE
-B1
28 LEAD SHRINK SMALL OUTLINE PLASTIC PACKAGE
(0.150” WIDE BODY)
B M
A
D
h x 45°
-C-
e

A2
A1
B
L
C
0.10(0.004)
MIN
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.053
0.069
1.35
1.75
-
A1
0.004
0.010
0.10
0.25
-
A2
-
0.061
-
1.54
-
B
0.008
0.012
0.20
0.30
9
C
0.007
0.010
0.18
0.25
-
D
0.386
0.394
9.81
10.00
3
E
0.150
0.157
3.81
3.98
4
e
0.025 BSC
0.635 BSC
-
H
0.228
0.244
5.80
6.19
-
h
0.0099
0.0196
0.26
0.49
5
NOTES:
L
0.016
0.050
0.41
1.27
6
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2
of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch)
per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “B” does not include dambar protrusion. Allowable dambar protrusion shall be 0.10mm (0.004 inch) total in excess of “B”
dimension at maximum material condition.
10. Controlling dimension: INCHES. Converted millimeter dimensions
are not necessarily exact.
N
0.17(0.007) M
C A M
B S

28
0°
28
8°
0°
7
8°
Rev. 1 6/04
© Copyright Intersil Americas LLC 2005-2006. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN9203 Rev 2.00
May 23, 2006
Page 22 of 22
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