NJSEMI BUV28 Fast npn switching transistor Datasheet

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TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
FAST NPN SWITCHING TRANSISTOR
NPN
BUV28
high speed transistors suited for low voltage application:
" High Frequency and Efficiency Converters
* Switching Regulators
* Motor Control
FEATURES
* Low Saturation Voltage
* Fast Turn-on and Turn-off
10 AMPERE
POWER TRANSISTOR
NPN SILICON
200 VOLTS
70 WATTS
MAXIMUM RATINGS
Characteristic
Symbol
Rating
Unit
w
200
V
VCBO
400
V
VEBO
7.0
V
"c
10
A
Base Current-Continuous
IB
2.0
A
Total Power Dissipation ®TC= 25°C
Derate above 25 °C
PD
70
0.56
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction
Temperature Range
TJ-TSTG
TO-220
W
W/°C
°C
-65 to +150
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f
L_
E
L
" —Q
t
D
[
\i
—L
H^t-
—IF
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case
R6jc
1.785
°c/w
PIN 1.BASE
2, COLLECTOR
REMOTER
4.COLLECTOft(CASE)
DIM
FIGURE -1 POWER DERATING
80
A
B
270
C
D
E
F
G
H
\
I60
Q 50
"X
\
£40
§30
§20
"\5
0
MILLIMETERS
MIN
MAX
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.96
3.90
422
X\
£t
2.10
*<>
^c
4
1
1 2 3
'}
Jjir
J
1.14
K
2.20
0.33
L
50
M
0
248
3.70
75
Tc , TEMPERATURE(*C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUV28 NPN
ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
( lc= 30 mA , IB=0 )
V(BR)CEO
Collector Cutoff Current
(V CB =300V,I E =0)
ICBO
Emitter Cutoff Current
'EBO
V
200
mA
1.0
mA
1.0
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
( lc* 3.0 A, IB= 300 mA )
( lc= 6.0 A, IB= 600 mA )
VCE^
Base-Emitter Saturation Voltage
(IC=6.0A, IB= 600mA)
v«
V
0.7
1.5
V
2.0
SWITCHING CHARACTERISTICS
Turn-On Time
Storage Time
VCC=150V, lc= 5.0A
IB1=-IM=0.5A
Fall Time
(1) Pulse Test Pulse width ^ 300 us , Duty Cycle 5 2.0%
ton
1.0
us
*.
1.5
us
t,
0.3
us
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