September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS(ON) = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS ID T C = 25°C unless otherwise noted NDP6020P NDB6020P Units -20 V Gate-Source Voltage - Continuous ±8 V Drain Current - Continuous -24 A - Pulsed -70 PD Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Temperature Range Derate above 25°C © 1997 Fairchild Semiconductor Corporation 60 W 0.4 W/°C -65 to 175 °C NDP6020P Rev.C1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V TJ = 55°C -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -12 A -0.4 TJ = 125°C -0.3 TJ = 125°C RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -10 A RDS(ON) Static Drain-Source On-Resistance VGS = -2.5 V, ID = -10 A ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -12 A -0.7 -0.56 -0.7 0.041 0.05 0.06 0.08 0.059 0.07 0.064 0.075 -24 Ω A 14 S 1590 pF 725 pF 215 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) VDD = -20 V, ID = -3 A, VGS = -5 V, RGEN = 6 Ω 15 30 nS 27 60 nS Turn - Off Delay Time 120 250 nS tf Turn - Off Fall Time 70 150 nS Qg Total Gate Charge 25 35 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, ID = -24 A, VGS = -5 V 5 nC 10 nC NDP6020P Rev.C1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Drain-Source Diode Forward Current -24 A ISM Maximum Pulsed Drain-Source Diode Forward Current -80 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12 A (Note 1) -1.1 trr Reverse Recovery Time 60 ns Irr Reverse Recovery Current VGS = 0 V, IF = -24 A, dIF/dt = 100 A/µs -1.7 A -1.3 V THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6020P Rev.C1 Typical Electrical Characteristics -50 V GS = -5.0V 1.8 -4.5 V GS = -2.5 V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) -4.0 -40 -3.5 -30 -3.0 -2.7 -20 -2.5 -10 I D -2.0 0 0 -1 -2 -3 -4 , DRAIN-SOURCE VOLTAGE (V) V DS 1.6 -3.0 1.4 -4.0 -4.5 -5.0 1 0.8 -5 0 -10 -20 -30 I D , DRAIN CURRENT (A) R DS(on) , NORMALIZED V G S =-4.5V 1.4 1.2 1 0.8 DRAIN-SOURCE ON-RESISTANCE 1.6 0.6 -50 VGS = -4.5V TJ = 125°C 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 0 -10 -20 I J D -30 -40 -50 , DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 T = -55°C J V DS = -5V -8 25°C V GS(th), NORMALIZED 125°C -6 D -4 -2 -1 V GS -1.5 -2 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -2.5 GATE-SOURCE THRESHOLD VOLTAGE -10 I , DRAIN CURRENT (A) -50 2 I D = -12A 0 -0.5 -40 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.8 R DS(ON), NORMALIZED -3.5 1.2 Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE -2.7 VDS = V 1.1 GS I D = -250µA 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 J Figure 6. Gate Threshold Variation with Temperature. NDP6020P Rev.C1 Typical Electrical Characteristics (continued) 20 10 ID = -250µA VGS = 0V 4 1.06 -I , REVERSE DRAIN CURRENT (A) 1.04 1.02 1 0.98 T J = 125°C 1 25°C 0 .1 -55°C 0 .0 1 0 .0 0 1 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 0.96 -50 -25 0 25 50 75 100 125 150 175 0 .0 0 0 1 0 T J , JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation with Temperature. 8 I Ciss 1000 Coss 500 300 Crss f = 1 MHz D V DS = -5V = -24A -10V 6 -15V 4 2 GS CAPACITANCE (pF) 2000 , GATE-SOURCE VOLTAGE (V) 3000 -V V GS = 0 V 100 0 .1 0 0 .2 -V DS 0 .5 1 2 5 , DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 9. Capacitance Characteristics. 0 10 Q tf 90% 90% V OUT VO U T 10% 10% 90% V IN S 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. 40 t d(off) DUT G 30 t off tr RL D R GEN 20 , GATE CHARGE (nC) t on t d(on) V IN g Figure 10. Gate Charge Characteristics. -VDD VGS 1 .2 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 4000 200 0 .2 0 .4 0.6 0 .8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) INVERTED Figure 12. Switching Waveforms. NDP6020P Rev.C1 30 100 V DS = - 5V TJ = -55°C 18 25°C 125°C 12 6 30 0 -5 -10 -15 -20 -25 1m 10m 100 10 DC 5 s s ms VGS = -4.5V SINGLE PULSE R θJC = 2.5 °C/W AT = 25°C C 3 2 0 1µs IT LIM N) S(O D R 60 24 -ID , DRAIN CURRENT (A) g FS, TRANSCONDUCTANCE (SIEMENS) Typical Electrical Characteristics (continued) 1 1 2 I D , DRAIN CURRENT (A) 5 10 20 30 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 14. Maximum Safe Operating Area. Figure 13. Transconductance Variation with Drain Current and Temperature. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θ JC (t) = r(t) * R θJC 0.2 0.2 R θJC = 2.5 °C/W 0.1 0.1 P(pk) 0.05 0.05 0.03 0.02 t1 t2 0.01 0.02 0.01 0.01 TJ - TC = P * R (t) θJC Duty Cycle, D = t 1 /t 2 Single Pulse 0.1 1 10 100 1000 t 1 ,TIME (m s) Figure 15. Transient Thermal Response Curve. NDP6020P Rev.C1