ASB ASW114 5-8000 mhz mmic amplifier Datasheet

ASW114
5-8000 MHz MMIC Amplifier
Features
Description
·17 dB Gain at 2000 MHz
The ASW114, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication systems up to 8 GHz. The amplifier is available in an
SOT-363 package and passes through the stringent
DC, RF, and reliability tests.
·14.5 dBm P1dB at 2000 MHz
·29 dBm OIP3 at 2000 MHz
·3.3 dB NF at 2000 MHz
·MTTF > 100 Years
·Single Supply
Package Style: SOT-363
Application Circuit
Typical Performance
Parameters
Units
Frequency
Typical
MHz
900
2000
3500
5800
900
2000
3500
Gain
dB
20
17
13.5
10.5
20.5
17
14
S11
dB
-18
-14
-18
-14
-20
-14
-16
S22
dB
-15
-15
-15
-18
-16
-16
-18
Output IP31)
dBm
24.5
26
26.5
23
29.5
29
--
Noise Figure
dB
3.2
3.3
4.2
3.9
3.1
3.3
4.3
Output P1dB
dBm
12.5
13
14
12
14.5
14.5
14.5
Current
mA
37
53
V
3.2
3.3
Device Voltage
·5 ~ 140 MHz
·IF
·500 ~ 3500 MHz
·300 ~ 2170 MHz
·4000 ~ 6000 MHz
·6500 ~ 7800 MHz
·ATSC (57 ~ 213 MHz)
·DVB-T (V/U band)
·950 ~ 2150 MHz (SMATV)
·50 ~ 1000MHz (CATV /
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
75ohms)
·50 ~ 2150MHz (SMATV /
Product Specifications
Parameters
Testing Frequency
Units
MHz
Gain
dB
S11
dB
S22
Min
dBm
16.5
17
-15
24
dB
Output P1dB
dBm
12
Current
mA
32
V
26
3.3
3.5
13
37
42
3.2
Absolute Maximum Ratings
Parameters
75ohms)
-14
Noise Figure
Device Voltage
Max
2000
dB
Output IP3
Typ
Pin Configuration
Rating
Operating Case Temperature
-40 to +85°C
Pin No.
Function
Storage Temperature
-40 to +150°C
3
RF IN
Device Voltage
+3.5 V
6
RF OUT / Bias
Operating Junction Temperature
+150°C
Input RF Power (CW, 50ohm matched)*
25 dBm
1,2,4,5
GND
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/15
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Outline Drawing
Symbols
A
A1
A2
b
C
D
F
E1
e
e1
L
Dimensions (In mm)
MIN
NOM
MAX
0.90
1.00
1.10
0.025
0.062
0.10
0.875
0.937
1.00
0.20
0.30
0.40
0.10
0.125
0.15
1.90
2.00
2.10
1.15
1.25
1.35
2.00
2.10
2.20
-0.65BSC
--1.30BSC
--0.425REF
--
Pin NO.
Function
Pin NO.
Function.
1
GND
4
GND
2
GND
5
GND
3
RF IN
6
RF OUT / Bias
Mounting Recommendation (in mm)
Note: 1. The number and size of ground via holes in a circuit board is
critical for thermal and RF grounding considerations.
2. We recommend that the ground via holes be placed on the
bottom of lead pin 2 for better RF and thermal performance,
as shown in the drawing at the left side.
Ordering Information
Part Number
2/15
Description
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
5
140
Magnitude S21 (dB)
20.5
20.5
Magnitude S11 (dB)
-18
-18
Magnitude S22 (dB)
-14
-14
Output P1dB (dBm)
10
9.5
5 ~ 140 MHz
Output IP31) (dBm)
19
18.5
+3.2 V
Noise Figure (dB)
3.0
2.9
Device Voltage (V)
3.2
3.2
Current (mA)
37
37
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.2 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=54 mH
(27mH+27mH)
RF IN
C1=1 mF
ASW114
RF OUT
C2=1 mF
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
0
100
200
300
400
500
-30
0
50
Frequency (MHz)
100
150
200
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
0
0
100
200
300
400
500
0
500
Frequency (MHz)
3/15
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
IF
+3.2 V
150
300
450
Magnitude S21 (dB)
21
21
21
20.5
Magnitude S11 (dB)
-15
-18
-18
-18
Magnitude S22 (dB)
-18
-16
-16
-16
Output P1dB (dBm)
12
12
12
12
Output IP3 (dBm)
22.5
22.5
23
23.5
Noise Figure (dB)
--
--
--
--
Device Voltage (V)
3.2
3.2
3.2
3.2
Current (mA)
37
37
37
37
1)
70 ~ 450 MHz
70
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1
MHz.
2
Schematic
Board Layout (FR4, 40x40 mm , 0.8T)
Vcc=3.2 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=680 nH
C2=1000 pF
RF IN
C1=1000 pF
RF OUT
ASW114
S-parameters & K-factor
25
-5
-10
20
-15
S11 (dB)
Gain (dB)
15
10
-20
-25
5
-30
0
-35
100
200
300
400
500
100
200
Frequency (MHz)
300
400
500
Frequency (MHz)
-5
5
-10
4
Stability Factor
S22 (dB)
-15
-20
-25
3
2
1
-30
-35
0
100
200
300
400
500
0
500
Frequency (MHz)
4/15
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
500
900
1750
2000
2400
2700
3500
Magnitude S21 (dB)
20.5
20
17.5
17
16
15.3
13.5
Magnitude S11 (dB)
-15
-18
-14
-14
-15
-15
-18
Magnitude S22 (dB)
-13
-15
-15
-15
-18
-18
-15
Output P1dB (dBm)
12.5
12.5
13
13
13.5
13.5
14
500 ~ 3500 MHz
Output IP3 (dBm)
25
24.5
25
26
26.5
25.5
26.5
+3.2 V
Noise Figure (dB)
3.2
3.2
3.2
3.3
3.3
3.4
4.2
1)
Device Voltage (V)
3.2
Current (mA)
37
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.2 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=33 nH
C2=100 pF
RF IN
C1=100 pF
RF OUT
ASW114
`
S-parameters & K-factor
25
0
o
-40 c
25oc
85oc
20
-5
-40oc
25oc
85oc
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
-25
0
500
1000
1500
2000
2500
3000
3500
4000
-30
0
500
1000
Frequency (MHz)
-40oc
25oc
85oc
3000
3500
4000
4
Stability Factor
-10
S22 (dB)
2500
5
-5
-15
-20
3
2
1
-25
0
500
1000
1500
2000
2500
3000
3500
4000
0
0
500
Frequency (MHz)
5/15
2000
Frequency (MHz)
0
-30
1500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Gain vs. Temperature
Current vs. Temperature
60
22
50
21
20
Gain (dB)
Current (mA)
40
30
19
20
Frequency = 900 MHz
18
10
0
-60
-40
-20
0
20
40
60
80
17
-60
100
-40
-20
0
20
40
60
80
100
Temperature (oC)
o
Temperature ( C)
Output IP3 vs. Frequency
P1dB vs. Frequency
32
18
30
16
28
Output IP3 (dBm)
P1dB (dBm)
14
12
10
o
-40 c
25oc
85oc
8
26
-40oc
25oc
85oc
24
22
20
18
16
6
14
0
500
1000
1500
2000
2500
3000
3500
4000
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
Output IP3 vs. Tone Power (Frequency = 2000MHz)
35
Output IP3 (dBm)
30
25
20
15
-40oc
25oc
85oc
10
5
-6
-4
-2
0
2
4
6
8
10
12
Pout per Tone (dBm)
6/15
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
500
900
1750
2000
2400
2700
3500
Magnitude S21 (dB)
21
20.5
18
17
16
15.5
14
Magnitude S11 (dB)
-18
-20
-14
-14
-14
-13
-16
Magnitude S22 (dB)
-13
-16
-14
-16
-18
-18
-18
Output P1dB (dBm)
14.5
14.5
14.5
14.5
14.5
14
14.5
500 ~ 3500 MHz
Output IP31) (dBm)
30
29.5
29
29
29
27
--
+3.3 V
Noise Figure (dB)
3.4
3.1
3.2
3.3
3.4
3.5
4.3
Device Voltage (V)
3.3
Current (mA)
53
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=33 nH
C2=100 pF
C1=100 pF
RF IN
RF OUT
ASW114
`
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
0
500
1000
1500
2000
2500
3000
3500
4000
-30
0
500
1000
Frequency (MHz)
1500
2000
2500
3000
3500
4000
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
3
0
500
1000
1500
2000
2500
3000
3500
4000
0
0
500
Frequency (MHz)
7/15
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
300 ~ 2700 MHz
Frequency (MHz)
300
900
2000
2700
Magnitude S21 (dB)
19.3
19
16.4
15
Magnitude S11 (dB)
-10
-15
-15
-18
Magnitude S22 (dB)
-8
-13
-14
-16
Output P1dB (dBm)
11
11
11.5
12
Output IP3 (dBm)
17.0
17.5
18.5
22
Noise Figure (dB)
3.2
3
3
3.3
Device Voltage (V)
3.1
3.1
3.1
3.1
Current (mA)
25
25
25
25
1)
+3.1 V
1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1
MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.1 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=33 nH
C2=100 pF
C1=100 pF
RF IN
RF OUT
ASW114
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
0
500
1000
1500
2000
2500
3000
3500
4000
-30
0
500
1000
Frequency (MHz)
-5
4
Stability Factor
5
S22 (dB)
-10
-15
-20
2500
3000
3500
4000
3
2
1
0
500
1000
1500
2000
2500
3000
3500
4000
0
0
500
Frequency (MHz)
8/15
2000
Frequency (MHz)
0
-25
1500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
4000
5000
5800
6000
Magnitude S21 (dB)
13
11.5
10.5
10.5
Magnitude S11 (dB)
-18
-18
-14
-14
Magnitude S22 (dB)
-14
-16
-18
-16
Output P1dB (dBm)
13
12
12
11
4000 ~ 6000 MHz
Output IP3 (dBm)
25
25
23
22.5
+3.2 V
Noise Figure (dB)
3.4
3.8
3.9
3.9
Device Voltage (V)
3.2
3.2
3.2
3.2
Current (mA)
37
37
37
37
1)
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1
MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.2 V
D1=5.6V
Zener Diode
C4=1 mF
C3=10 pF
L1=6.8 nH
C2=5 pF
C1=5 pF
RF IN
RF OUT
ASW114
S-parameters & K-factor
20
0
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
-25
0
3000
3500
4000
4500
5000
5500
6000
6500
7000
-30
3000
3500
4000
Frequency (MHz)
-5
4
Stability Factor
5
S22 (dB)
-10
-15
-20
5500
6000
6500
7000
6000
7000
8000
3
2
1
3500
4000
4500
5000
5500
6000
6500
7000
0
0
1000
Frequency (MHz)
9/15
5000
Frequency (MHz)
0
-25
3000
4500
2000
3000
4000
5000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
6500
7800
Magnitude S21 (dB)
9.8
9.1
Magnitude S11 (dB)
-11
-8
Magnitude S22 (dB)
-18
-18
Output P1dB (dBm)
6
3
6500 ~ 7800 MHz
Output IP3 (dBm)
15.5
14.0
+3.2 V
Noise Figure (dB)
5.6
5.5
Device Voltage (V)
3.2
3.2
Current (mA)
37
37
1)
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by
1 MHz.
Vs=3.2 V
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
D1=5.6V
Zener Diode
C6=1 mF
C5=10 pF
L1=5.6 nH
C2=4 pF
RF IN
C1=1 pF
RF OUT
ASW114
C4=0.3 pF
C3=0.3 pF
12
0
10
-5
8
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
6
-15
4
-20
2
-25
0
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
-30
6200
6400
6600
Frequency (MHz)
6800
7000
7200
7400
7600
7800
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
6200
3
6400
6600
6800
7000
7200
7400
7600
7800
8000
0
0
1000
Frequency (MHz)
10/15
2000
3000
4000
5000
6000
7000
8000
9000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
57
213
Magnitude S21 (dB)
20
20
Magnitude S11 (dB)
-15
-15
Magnitude S22 (dB)
-12
-13
ATSC
Output P1dB (dBm)
10.5
10.5
57 ~ 213 MHz
Output IP31) (dBm)
18.5
19
Noise Figure (dB)
2.7
2.8
Device Voltage (V)
3.1
3.1
Current (mA)
25
25
+3.1 V
1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.1 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=680 nH
C2=10 nF
RF IN
C1=10 nF
RF OUT
ASW114
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
-15
-20
0
100
200
300
400
500
-25
0
100
200
Frequency (MHz)
300
400
500
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
0
0
100
200
300
400
500
0
500
Frequency (MHz)
11/15
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
170
860
Magnitude S21 (dB)
20
18.5
Magnitude S11 (dB)
-15
-14
Magnitude S22 (dB)
-12
-15
DVB-T ( V / U band)
Output P1dB (dBm)
11
10
170 ~ 860 MHz
Output IP31) (dBm)
20
19
Noise Figure (dB)
2.7
2.8
Device Voltage (V)
3.1
3.1
Current (mA)
25
25
+3.1 V
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.1 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=100 nH
C2=1000 pF
RF IN
C1=1000 pF
RF OUT
ASW114
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
-15
-20
0
200
400
600
800
1000
-25
0
200
400
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
800
1000
3
2
1
0
0
200
400
600
800
1000
0
500
Frequency (MHz)
12/15
600
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
950
1500
2000
Magnitude S21 (dB)
20.5
18.5
17
Magnitude S11 (dB)
-20
-14
-14
Magnitude S22 (dB)
-16
-14
-16
SMATV
Output P1dB (dBm)
14.5
14.5
14.5
950 ~ 2150 MHz
Output IP31) (dBm)
29.5
29
29
Noise Figure (dB)
3.1
3.2
3.3
+3.3 V
Device Voltage (V)
3.3
Current (mA)
53
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100pF
L1=33 nH
C2=100 pF
C1=100 pF
RF IN
RF OUT
ASW114
`
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
0
500
1000
1500
2000
2500
3000
3500
4000
-30
0
500
1000
Frequency (MHz)
1500
2000
2500
3000
3500
4000
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
3
0
500
1000
1500
2000
2500
3000
3500
4000
0
0
500
Frequency (MHz)
13/15
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
50
500
860
Magnitude S21 (dB)
19.5
19
18.5
Magnitude S11 (dB)
-12.5
-17
-20
Magnitude S22 (dB)
-15
-20
-15
CATV (75 ohms)
Output P1dB (dBm)
11
11
11
50 ~ 1000 MHz
Output IP31) (dBm)
17
19
20
Output IP21),2) (dBm)
16
24
26
Noise Figure (dB)
2.9
3.1
3.2
Device Voltage (V)
3.1
3.1
3.1
Current (mA)
25
25
25
+3.1 V
1) OIP3 and OIP2 are measured with two tones at an output power of +0
dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vs=3.1 V
C3=1 mF
L1=820 nH
RF OUT
RF IN
C1=1 mF
ASW114
C2=1 mF
S-parameters & K-factor
0
25
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
-30
0
200
400
600
800
1000
0
Frequency (MHz)
200
400
600
800
1000
Frequency (MHz)
0
-5
S22 (dB)
-10
-15
-20
-25
-30
0
200
400
600
800
1000
Frequency (MHz)
14/15
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012
ASW114
5-8000 MHz MMIC Amplifier
Frequency (MHz)
50
1000
2150
19.8
18.9
16.0
Magnitude S11 (dB)
-11
-16
-20
Magnitude S22 (dB)
-13
-16
-20
Magnitude S21 (dB)
APPLICATION CIRCUIT
SMATV (75 ohms)
Output P1dB (dBm)
7
9
7
50 ~ 2150 MHz
Output IP31) (dBm)
17
20
17
Output IP21),2) (dBm)
18
29
25
Noise Figure (dB)
3.2
3.0
3.2
Device Voltage (V)
3.1
3.1
3.1
Current (mA)
25
25
25
+3.1 V
1) OIP3 and OIP2 are measured with two tones at an output power of +0
dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vs=3.1 V
C4=1 mF
L1=1 mH
(LQH31CN1R0M03)
C2=1 mF
RF IN
C1=1 mF
RF OUT
ASW114
C3=0.5 pF
S-parameters & K-factor
0
25
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
-25
-30
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Frequency (MHz)
Frequency (MHz)
0
-5
S22 (dB)
-10
-15
-20
-25
-30
0
500
1000
1500
2000
2500
Frequency (MHz)
15/15
ASB Inc. · [email protected] · Tel: +82-42-528-7223
July 2012