IXYS CPC3960 Depletion-mode fet Datasheet

CPC3960
600V N-Channel
Depletion-Mode FET
INTEGRATED CIRCUITS DIVISION
BVDSX/
BVDGX
600V
RDS(on)
(max)
44
IDSS (min)
Package
100mA
SOT-223
Features
•
•
•
•
•
High Breakdown Voltage: 600V
On-Resistance: 44 max. at 25ºC
Low VGS(off) Voltage: -1.4 to -3.1V
High Input Impedance
Small Package Size: SOT-223
Applications
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•
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Description
The CPC3960 is a 600V, N-channel, depletion-mode,
Field Effect Transistor (FET) created using IXYS
Integrated Circuits Division’s proprietary vertical DMOS
process. Yielding a robust device with high input
impedance, this process enables world class, high
voltage MOSFET performance with an economical
silicon gate architecture.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3960 ideal for use
in high-power applications.
The CPC3960 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Division’s Solid State Relays for industrial and
telecommunications applications.
Current Regulator
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
The CPC3960 is available in the SOT-223 package.
Ordering Information
Part #
CPC3960ZTR
Description
SOT-223: Tape and Reel (1000/Reel)
Circuit Symbol
Package Pinout
D
DS-CPC3960-R02
D
1
4
2
3
G
D
S
G
S
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1
INTEGRATED CIRCUITS DIVISION
CPC3960
Absolute Maximum Ratings @ 25ºC
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation 1
Operational Temperature
Junction Temperature, Maximum
Storage Temperature
1
Ratings
600
±15
150
1.8
-55 to +125
+125
-55 to +125
Units
V
V
mA
W
ºC
ºC
ºC
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Mounted on 1"x1" 2 oz. Copper FR4 board.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Source-Drain Diode Voltage Drop
Thermal Resistance
Junction to Ambient
Junction to Case
2
Symbol
BVDSX
VGS(off)
dVGS(off) /dT
IGSS
ID(off)
IDSS
RDS(on)
dRDS(on) /dT
Gfs
CISS
COSS
CRSS
Conditions
VGS= -5.5V, ID=100µA
VDS= 15V, ID=1A
VDS= 15V, ID=1A
VGS=±15V, VDS=0V
VGS= -5.5V, VDS=600V
VGS= 0V, VDS=15V
VGS= 0V, ID=100mA, VDS=10V
ID= 50mA, VDS = 10V
VGS= -3.5V
Min
600
-1.4
100
100
Typ
100
6.8
4.2
Max
-3.1
4.5
100
1
44
2.5
-
Units
V
V
mV/ºC
nA
µA
mA

%/ºC
m
-
pF

Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in RDS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
VDS= 25V
-
VSD
f= 1MHz
VGS= -5V, ISD=150mA
-
0.72
1
V
JA
JC
-
-
55
23
-
ºC/W
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R02
INTEGRATED CIRCUITS DIVISION
CPC3960
PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)*
Input Admittance
(VDS=3V)
0.25
0.0
400
TA=-40ºC
TA=25ºC
TA=110ºC
300
0.10
Gm (m )
VGS (V)
-1.0
:
0.15
Transconductance vs. Drain Current
(VDS=3V)
TA=-40ºC
-0.5
0.20
ID (A)
Threshold Voltage
(IDS=1PA)
-1.5
-2.0
TA=25ºC
200
TA=110ºC
100
-2.5
0.05
0.00
-3.5
-4
-3
-2
VGS (V)
-1
0
-50
Forward Safe Operating Bias
(VGS=0V, DC Load)
1
-25
0
25
50
75
Temperature (ºC)
125
-100
0.00
ID (mA)
250
50
200
40
150
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
100
0.01
50
Voltage (V)
3
VDS (V)
On-Resistance vs. Drain Current
Power Dissipation
vs. Ambient Temperature
10
100
0
1000
1
2
4
5
TA=25ºC
TA=-40ºC
0.1
0.2
0.3
ID (A)
0.4
0.6
10
-25
0
25
50
75
Temperature (ºC)
100
125
Blocking Voltage vs. Temperature
1.5
1.0
0.5
0
20
40
60
80
100
Temperature (ºC)
Leakage Current
(VGS=-5V, VDS=600V)
120
200
120
140
780
760
740
720
700
680
-50
-25
0
25
50
75
Temperature (ºC)
100
125
Capacitance vs. Drain-Source Voltage
(VDS=-5V)
100
Capacitance (pF)
Leakage Current (nA)
0.5
20
800
0.0
0.0
0.20
On-Resistance vs. Temperature
(VGS=0V, IDS=50mA)
-50
Blocking Voltage (VP)
Power Dissipation (W)
TA=110ºC
0.15
30
6
2.0
50
45
40
35
30
25
20
15
10
5
0
0.10
ID (A)
0
0
0.001
1
0.05
Output Characteristics
0.1
On Resistance (:)
100
On-Resistance (:)
-5
Current (A)
0
-3.0
80
60
40
150
100
CISS
CRSS
COSS
50
20
0
-50
0
-25
0
25
50
75
Temperature (ºC)
100
125
0
5
10
15
20
25
VDS (V)
30
35
40
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R02
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3
INTEGRATED CIRCUITS DIVISION
CPC3960
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
CPC3960Z
MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
Maximum Temperature x Time
CPC3960Z
260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
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R02
INTEGRATED CIRCUITS DIVISION
CPC3960
Mechanical Dimensions
CPC3960Z
2.90 / 3.10
(0.114 / 0.122)
PCB Land Pattern
0.229 / 0.330
(0.009 / 0.013)
1.90
(0.075)
6.705 / 7.290
(0.264 / 0.287)
3.30 / 3.71
(0.130 / 0.146)
1.499 / 1.981
(0.059 / 0.078)
3.20
(0.126)
6.10
(0.24)
Pin 1
0.610 / 0.787
(0.024 / 0.031)
1.90
(0.075)
0.914 MIN
(0.036 MIN)
2.286
(0.090)
6.30 / 6.71
(0.248 / 0.264)
0.020 / 0.102
(0.0008 / 0.004)
0.864 / 1.067
(0.034 / 0.042)
0.90
(0.035)
1.549 / 1.803
(0.061 / 0.071)
2.286
(0.090)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
4.597
(0.181)
CPC3960ZTR Tape & Reel
177.8 Dia
(7.00 Dia)
5.50 ± 0.05
(0.217 ± 0.002)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
W=12.08 ± 0.2
(0.476 ± 0.008)
B0=7.42 ± 0.1
(0.292 ± 0.004)
K0=1.88 ± 0.1
(0.074 ± 0.004)
Embossed
Carrier
1.75 ± 0.1
(0.069 ± 0.004)
A0=6.83 ± 0.1
(0.269 ± 0.004)
P=8.03 ± 0.1
(0.316 ± 0.004)
Embossment
Dimensions
mm
(inches)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
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Specification: DS-CPC3960-R02
©Copyright 2015, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
4/10/2015