MS23N70 N-Channel 100-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N70] © Bruckewell Technology Corporation Rev. A -2014 MS23N70 N-Channel 100-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V a 1.5 A a 1.2 A 10 A ID Continuous Drain Current (TA =25°C) Continuous Drain Current (TA =70°C) IDM IS PD TJ/TSTG Pulsed Drain Current b Continuous Source Current (Diode Conduction) a 1.6 A a 1.3 W a 0.8 W -55 to +150 °C Power Dissipation (TA =25°C) Power Dissipation (TA =70°C) Operating Junction and Storage Temperature Thermal Resistance Ratings Symbol Parameter RθJA Maximum a 100 a 166 Maximum Junction-to-Ambient C/W (t <= 10 sec) Maximum Junction-to-Ambient C/W (Steady-State) Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Electrical Characteristics Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS , ID = -250 μA IGSS Gate-Body Leakage VDS = 0 V , VGS = 20 V IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current r DS(on) A gfs Forward Tranconductance VSD Diode Forward Voltage Publication Order Number: [MS23N70] A A Typ. Max. 1 Units V ±100 VDS = 80 V , VGS = 0 V 1 VDS = 80 V , VGS = 0 V , TJ= 55°C 10 VDS = 5 V , VGS = 10 V Drain-Source On-Resistance Min 4 nA uA A VDS = 10 V , ID = 1.2 A 280 VDS = 4.5 V , ID = 1.0 A 355 mΩ VGS = 15 V , ID = 1.2 A 5 S IS = 0.8 A , VGS = 0 V 0.75 V © Bruckewell Technology Corporation Rev. A -2014 MS23N70 N-Channel 100-V (D-S) MOSFET Dynamic Symbol Qg b Parameter Test Conditions Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V , ID = 1.2 A , VGS = 4.5 V VDD = 50 V , ID = 1.2 A , VGEN = 10 V , RL = 41.7 Ω , RGEN = 6 Ω VDS = 15 V , VGS =0 V , f =1.0MHz f = 1 MHz Min Typ. Max. Units -- 3.9 -- nC -- 1.3 -- nC -- 2.0 -- nC -- 4.8 -- ns -- 3.9 -- ns -- 12.7 -- ns -- 3.2 -- ns -- 332 -- pF -- 40 -- pF -- 29 -- pF 0.3 Ω Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Publication Order Number: [MS23N70] © Bruckewell Technology Corporation Rev. A -2014 MS23N70 N-Channel 100-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.1-ON RESISTANCE VS. DRAIN CURRENT FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VS GATE-TO-SOURCE FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE VOLTAGE FIG.5-OUTPUT CHARACTERISTICS Publication Order Number: [MS23N70] FIG.6-CAPACITANCE © Bruckewell Technology Corporation Rev. A -2014 MS23N70 N-Channel 100-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.7-GAGE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS23N70] © Bruckewell Technology Corporation Rev. A -2014 MS23N70 N-Channel 100-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS23N70] © Bruckewell Technology Corporation Rev. A -2014