Product Bulletin OP803TX September 1996 Hi-Reliability NPN Silicon Phototransistor Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • High reliability screening patterned Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C o o Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering o (1) iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 C Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V (2) Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW after MIL-PRF-19500 • Each lot subjected to Group A & B Lot Acceptance • Lensed for high sensitivity • Mechanically and spectrally matched to the OP235TX/TXV and OP236TX/TXV series IREDs Description Each device in the OP803, OP804 and OP805TX/TXV series consists of a high reliability NPN phototransistor mounted in a lensed, hermetically sealed, TO-18 package. All devices are 100% screened per Table II of MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2) Derate linearly 2.5 mW/o C above 25o C. The OP803, OP804 and OP805 TX/TXV series lensing creates an acceptance half angle of 12o< D> measured from the optical axis to the half power point. The series can be matched with either a solid state infrared source, such as the OP235 and OP236 TX/TXV series IREDs, or can be used to sense infrared content in a visible light source, such as a tungsten bulb or sunlight for automatic brightness control. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-34 (972) 323-2200 Fax (972) 323-2396 Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV Electrical Characteristics (T A = 25o C unless otherwise noted) Symbol IC(on) I CEO Parameter Min On-State Collector Current OP803TX,TXV OP804TX,TXV OP805TX,TXV 4.0 7.0 15.0 Typ Collector-Emitter Dark Current Max Units Test Conditions 8.0 22.0 mA mA mA VCE = 5.0 V, Ee = 5.0 mW/cm2(3) VCE = 5.0 V, Ee = 5.0 mW/cm2(3) 2(3) VCE = 5.0 V, Ee = 5.0 mW/cm 100 100 nA µA VCE = 10.0 V, E e = 0 VCE = 10.0 V, E e = 0, TA = 100o C V(BR)CBO Collector-Base Breakdown Voltage 30 V I C = 100 µA, I E = 0, Ee = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 V I C = 100 µA, I B = 0, Ee = 0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V I E = 100 µA, I C = 0, Ee = 0 VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V I C = 0.4 mA, Ee = 5.0 mW/cm2(3) tr Rise TimeOP804TX,TXV OP805TX,TXV 10.0 15.0 µs VCC = 30 V, I C = 1.00 mA, RL = 100 Ω tf Fall TimeOP804TX,TXV OP805TX,TXV 10.0 15.0 µs (3) Light source is an unfiltered tungsten lamp operated at a temperature of 2870 K. @TOPICS = Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-35