MMBT4124LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC 200 mAdc Symbol Max Unit 225 1.8 W mW/°C 556 °C/W 300 2.4 W mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 PD RJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM ZC M G G ZC = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT4124LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: MMBT4124LT1/D MMBT4124LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IE = 0) V(BR)CEO 25 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 − Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 50 nAdc 120 60 360 − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) hFE − Collector−Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) − 0.3 Vdc Base−Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − 0.95 Vdc fT 300 − MHz Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Collector−Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb − 4.0 pF Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz) hfe 120 480 − Current Gain − High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) |hfe| 3.0 120 − 480 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) NF − 5.0 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) − dB 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 200 10 100 5.0 TIME (ns) CAPACITANCE (pF) 7.0 Cibo 3.0 ts 70 50 td 30 tf tr 20 Cobo 2.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 5.0 20 30 40 1.0 Figure 1. Capacitance 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 2. Switching Times http://onsemi.com 2 200 MMBT4124LT1G AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz 12 14 SOURCE RESISTANCE = 200 IC = 1 mA f = 1 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1 k IC = 50 A 4 2 SOURCE RESISTANCE = 500 IC = 100 A 0 0.1 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) IC = 1 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 20 40 0 0.1 100 0.2 0.4 Figure 3. Frequency Variations 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 5.0 10 5.0 10 Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25°C) 100 hoe , OUTPUT ADMITTANCE ( mhos) hfe , CURRENT GAIN 300 200 100 70 50 30 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 5. Current Gain Figure 6. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 20 hie , INPUT IMPEDANCE (kΩ ) 10 5.0 2.0 1.0 0.5 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 Figure 7. Input Impedance 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 8. Voltage Feedback Ratio http://onsemi.com 3 MMBT4124LT1G STATIC CHARACTERISTICS h FE , DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C 1.0 VCE = 1 V +25°C 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.2 TJ = 25°C VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 100 1.0 0.5 VC for VCE(sat) 0 -55°C to +25°C -0.5 -55°C to +25°C -1.0 +25°C to +125°C VB for VBE(sat) -1.5 -2.0 200 +25°C to +125°C 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 180 200 MMBT4124LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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