, Dna. t-f 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D44TD3/4/5 Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEo(SUS)= SOOV(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 i^ -!/»%• • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for switching regulators, high resolution deflection circuits, inverters and motor drivers. 1^ 2 1 PIN 1.BASE t 2. COLLECTOR 1 I I 3. EMITTER 1 2 3 TO-220C package ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE D44TD3 D44TD5 600 D44TD3 300 ^ F U- M V V A t JOWS .. K 350 D44TD5 VEBO 1 400 500 Collector-Emitter Voltage VCEO ^> ,.,„. Q €H: Collector-Emitter Voltage VCEV UNIT V *Ti 400 Emitter-Base Voltage 5 V Collector Current-Continuous 4 A 5O&'< I HP t G [*- C 4 Ic ICM Collector Current-Peak 8 A PC Collector Power Dissipation — 9^°P @ T1 C-" <- 50 W Tj Junction Temperature 150 -C -65-150 •c Storage Temperature Range Tstg mm WIN DIM MAX A 15.70 15.90 9.90 10.10 B 4.20 4.40 C r> F G ht J K L MAX UNIT Q H S U 1.56 'CM/ V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors D44TD3/4/5 Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS D44TD3 VcEO(SUS) Collector-Emitter Sustaining Voltage D44TD4 MIN MAX UNIT 300 I C =0.1A;I B =0 D44TD5 350 V 400 VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage lc= 2A; IB= 0.4A 1.5 V D44TD3 VcE=400V;VBE(off)=1.5V 0.1 D44TD4 VCE= 500V; VBE(o(f)= 1.5V 0.1 D44TD5 VCE= 600V;VBE(0ff)= 1.5V 0.1 1.0 ICEV Collector Cutoff Current IEBO Emitter Cutoff Current VEB= 6V; lc=0 MFE DC Current Gain lc=2A; V CE =3V 5 mA mA