AUTOMOTIVE GRADE
AUIRFL014N
HEXFET® Power MOSFET
Features
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Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
55V
RDS(on) max.
G
0.16Ω
ID
S
1.9A
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Base part number
Package Type
AUIRFL014N
SOT-223
S
D
G
SOT-223
AUIRFL014N
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
Tape and Reel
95
2500
Orderable Part Number
AUIRFL014N
AUIRFL014NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is
25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
dv/dt
Pulsed Drain Current
Power Dissipation (PCB Mount)
Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
VGS
EAS
IAR
EAR
c
h
g
h
g
g
2.7
1.9
1.5
15
2.1
1.0
8.3
±20
48
1.7
0.1
5.0
g
d
cg
e
A
W
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 150
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
g
h
Typ.
Max.
Units
90
50
120
60
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRFL014N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
55
–––
–––
V
Breakdown Voltage Temp. Coefficient
–––
0.054
–––
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
0.16
2.0
–––
4.0
Ω
V
VDS = VGS, ID = 250μA
1.6
–––
–––
S
VDS = 25V, ID = 0.85A
–––
–––
1.0
–––
25
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
μA
nA
VGS = 10V, ID =1.9A
f
VDS = 44V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
7.0
11
Qgs
Gate-to-Source Charge
–––
1.2
1.8
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.3
5.0
VGS = 10V, See Fig 6 and 9
td(on)
Turn-On Delay Time
–––
6.6
–––
VDD = 28V
tr
Rise Time
–––
7.1
–––
td(off)
Turn-Off Delay Time
–––
12
–––
tf
Fall Time
–––
3.3
–––
RD =16 Ω, See Fig.10
Ciss
Input Capacitance
–––
190
–––
VGS = 0V
Coss
Output Capacitance
–––
72
–––
Crss
Reverse Transfer Capacitance
–––
33
–––
Min.
Typ.
Max.
ID = 1.7A
nC
ns
pF
VDS = 44V
f
ID = 1.7A
RG = 6.0 Ω
f
VDS = 25V
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
15
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
41
61
ns
Qrr
Reverse Recovery Charge
–––
64
95
nC
c
–––
–––
Conditions
MOSFET symbol
1.3
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/μs
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 8.2mH, RG = 25Ω, IAS = 3.4A. (See Figure 12)
ISD ≤ 1.7A, di/dt ≤ 250A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
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100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
10
1
4.5V
20μs PULSE WIDTH
TC = 25°C
0.1
0.1
1
10
A
10
4.5V
1
20μs PULSE WIDTH
TJ = 150°C
0.1
0.1
100
1
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
10
TJ = 150°C
TJ = 25°C
1
V DS = 25V
20μs PULSE WIDTH
5
6
7
8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
4
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A
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
10
9
A
I D = 1.7A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFL014N
350
250
Ciss
200
Coss
V GS , Gate-to-Source Voltage (V)
300
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 44V
V DS = 28V
V DS = 11V
16
12
150
Crss
100
I D = 1.7A
50
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
8
A
10
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
10
TJ = 150°C
TJ = 25°C
1
10
100μs
1ms
1
10ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
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A
1.4
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRFL014N
QG
10V
QGS
RD
V DS
V GS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2μF
12V
.3μF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
t
0.01
1
Notes:
1. Duty factor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10
100
A
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
E AS , Single Pulse Avalanche Energy (mJ)
AUIRFL014N
120
TOP
100
BOTTOM
ID
1.5A
2.7A
3.4A
80
60
40
20
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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AUIRFL014N
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
FL014N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFL014N
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFL014N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
SOT-223
MSL1
†††
Class M1A(+/- 50V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/- 350V )
(per AEC-Q101-001)
Charged Device
Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
RoHS Compliant
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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AUIRFL014N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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AUIRFL014N
Revision History
Date
3/26/2014
11
Comments
• Updated part marking on page 7
• Updated data sheet with new IR corporate template
www.irf.com © 2014 International Rectifier
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March 26, 2014