IRFH6200TRPbF VDS 20 RDS(on) max 0.99 (@VGS = 4.5V) (@VGS = 2.5V) Qg (typical) RG (typical) ID mΩ 1.50 155 nC 1.3 Ω 100 (@Tmb = 25°C) HEXFET® Power MOSFET V h A PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus • Hot-Swap Switch Features Benefits Low RDSon (≤ 0.99mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (≤ 0.8°C/W) Enable better thermal dissipation Low Profile (≤ 0.9 mm) results in Increased Power Density ⇒ Multi-Vendor Compatibility Industry-Standard Pinout Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier Base Part Number Package Type IRFH6200PbF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Orderable part number Note IRFH6200TRPbF IRFH6200TR2PbF EOL Notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C IDM PD @TA = 25°C PD @Tmb = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 20 ±12 49 40 100 100 400 3.6 156 0.029 -55 to + 150 h h Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BV DSS Drain-to-Source Breakdown Voltage ΔΒV DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Min. Typ. 20 ––– Max. Units ––– ––– 6.4 ––– ––– 0.75 0.95 ––– 0.80 0.99 ––– 1.10 1.50 V mV/°C Reference to 25°C, I D = 1mA 0.5 0.8 1.1 V ΔV GS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C I DSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 260 ––– ––– Qg Total Gate Charge ––– 155 230 Qgs Gate-to-Source Charge ––– 22 ––– Qgd Gate-to-Drain Charge ––– 53 ––– RG Gate Resistance ––– 1.3 ––– t d(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 74 ––– t d(off) Turn-Off Delay Time ––– 140 ––– tf Fall Time ––– 160 ––– Ciss Input Capacitance ––– 10890 ––– Coss Output Capacitance ––– 2890 ––– Crss Reverse Transfer Capacitance ––– 2180 ––– V GS = 4.5V, ID V GS = 2.5V, ID Gate Threshold Voltage gfs e = 50A e = 50A e V GS = 10V, ID = 50A mΩ VGS(th) I GSS Conditions V GS = 0V, I D = 250μA μA nA S V DS = V GS , ID = 150μA V DS = 16V, V GS = 0V V DS = 16V, V GS = 0V, TJ = 125°C V GS = 12V V GS = -12V V DS = 10V, I D = 50A V DS = 10V nC V GS = 4.5V I D = 50A (See Fig.17 & 18) Ω V DD = 10V, V GS = 4.5V ns I D = 50A RG=1.0Ω See Fig.15 V GS = 0V pF V DS = 10V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy I AR Avalanche Current c d Typ. Max. Units ––– 780 mJ ––– 30 A Diode Characteristics Parameter IS Min. Continuous Source Current ––– (Body Diode) Typ. ––– Max. Units Conditions MOSFET symbol 100 A D showing the G I SM Pulsed Source Current VSD (Body Diode) Diode Forward Voltage ––– ––– 1.2 V t rr Reverse Recovery Time ––– 86 130 ns TJ = 25°C, I F = 50A, V DD = 10V Qrr Reverse Recovery Charge ––– 350 525 nC di/dt = 260A/μs ––– c ––– 400 integral reverse p-n junction diode. TJ = 25°C, I S = 50A, V GS = 0V S e e Thermal Resistance Parameter RθJ C-mb Typ. Max. 0.5 0.8 RθJ C (Top) Junction-to-Mounting Base Junction-to-Case f ––– 15 RθJ A Junction-to-Ambient ––– 35 ––– 22 RθJ A (<10s) 2 g Junction-to-Ambient g www.irf.com © 2015 International Rectifier Submit Datasheet Feedback Units °C/W May 19, 2015 IRFH6200TRPbF 1000 1000 100 BOTTOM BOTTOM 100 10 1.3V 1.3V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 10 1 0.1 1 10 0.1 100 1000 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 T J = 175°C T J = 25°C 10 VDS = 10V ≤60μs PULSE WIDTH 1.0 ID = 50A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd Ciss 10000 Coss Crss 12.0 VDS= 16V VDS= 10V 10.0 8.0 6.0 4.0 2.0 0.0 1000 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V www.irf.com © 2015 International Rectifier 0 100 200 300 400 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 10msec 100μsec 100 1msec 10 DC Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.6 VGS(th) , Gate threshold Voltage (V) 400 ID, Drain Current (A) 10 Limited By Package 300 200 100 0 25 50 75 100 125 1.4 1.2 1.0 0.8 ID = 150μA 0.6 ID = 500μA 0.4 ID = 1.0mA ID = 1.0A 0.2 0.0 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF 3500 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) 4 ID = 50A ID TOP 19A 21A BOTTOM 30A 3000 3 2500 2000 2 1500 T J = 125°C 1000 1 T J = 25°C 500 0 0 0 2 4 6 8 10 12 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit V DS VGS RG Fig 16b. Unclamped Inductive Waveforms VDS RD 90% D.U.T. + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 s VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimens ion des ign to accommodate the component width Dimension des ign to accommodate the component lenght Dimension des ign to accommodate the component thicknes s Overall width of the carrier tape Pitch between s ucces s ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QT Y Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF † Qualification information Qualification level Moisture Sensitivity Level Industrial (per JE DE C JE S D47F PQFN 5mm x 6mm RoHS compliant †† guidelines ) MS L1 †† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.7mH, RG = 25Ω, IAS = 30A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date • Improve the Rdson at 4.5V max from 1.2mΩ to 0.99mΩ. 1/28/2013 12/02/2014 4/28/2015 5/19/2015 Comments • Added Rdson 10V (Absolute Maximum Rating table still based on Rdson max at 4.5V gate drive voltage) on page 1 & 2. • Formatted the data sheet using the IR Corporate template. • Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259) • Updated package outline for “option B” and added package outline for “option G” on page 7 • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015